专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 外观设计

USD600989S1 Polishing pad 有权
公开(公告)号：USD600989S1
公开(公告)日：2009-09-29
申请号：US29295290
申请日：2007-09-25
申请人： Hiroyuki Tano , Hiroshi Shiho
设计人： Hiroyuki Tano , Hiroshi Shiho

2. 发明申请

US20050260929A1 Chemical mechanical polishing pad and chemical mechanical polishing method 审中-公开
标题翻译：化学机械抛光垫和化学机械抛光方法
公开(公告)号：US20050260929A1
公开(公告)日：2005-11-24
申请号：US11132365
申请日：2005-05-19
申请人： Hiroshi Shiho , Hiroyuki Tano , Yukio Hosaka , Hideki Nishimura
发明人： Hiroshi Shiho , Hiroyuki Tano , Yukio Hosaka , Hideki Nishimura
IPC分类号： B24B37/04 , B24D13/14 , B24B1/00
CPC分类号： B24B37/26
摘要： A chemical mechanical polishing pad having a polishing surface, a non-polishing surface opposite to the polishing surface and a side surface for defining these surfaces, the polishing surface having (i) a first group of grooves which intersect a single virtual straight line extending from the center toward the peripheral portion of the polishing surface and do not cross one another, or a single first spiral groove which expands gradually from the center portion toward the peripheral portion of the polishing surface, and (ii) a second group of grooves which extend from the center portion toward the peripheral portion of the polishing surface, intersect the first group of grooves or the first spiral groove and do not cross one another. Since this chemical mechanical polishing pad fully suppresses the occurrence of a scratch on the polished surface and has an excellent polishing rate, it is advantageously used in a chemical mechanical polishing method.
摘要翻译：一种化学机械抛光垫，其具有抛光表面，与抛光表面相对的非抛光表面和用于限定这些表面的侧表面，所述抛光表面具有（i）第一组沟槽，其与从所述中心朝向所述研磨面的周边部并且不会彼此交叉，或者从所述研磨面的中心部朝向所述周边部逐渐扩展的单个第一螺旋槽，以及（ii）延伸的所述第二组槽从中心部朝向研磨面的周边部分，与第一组槽或第一螺旋槽相交，并且不会彼此交叉。由于该化学机械抛光垫完全抑制在研磨表面上产生划痕并且具有优异的抛光速率，因此有利地用于化学机械抛光方法中。

3. 外观设计

USD592029S1 Polishing pad 有权
公开(公告)号：USD592029S1
公开(公告)日：2009-05-12
申请号：US29295291
申请日：2007-09-25
申请人： Hiroyuki Tano , Hiroshi Shiho
设计人： Hiroyuki Tano , Hiroshi Shiho

4. 外观设计

USD576855S1 Polishing pad 有权
公开(公告)号：USD576855S1
公开(公告)日：2008-09-16
申请号：US29295220
申请日：2007-09-24
申请人： Takahiro Okamoto , Hiroshi Shiho
设计人： Takahiro Okamoto , Hiroshi Shiho

5. 发明授权

US07329174B2 Method of manufacturing chemical mechanical polishing pad 有权
标题翻译：化学机械抛光垫的制造方法
公开(公告)号：US07329174B2
公开(公告)日：2008-02-12
申请号：US11521547
申请日：2006-09-15
申请人： Yukio Hosaka , Hiroyuki Tano , Hideki Nishimura , Hiroshi Shiho
发明人： Yukio Hosaka , Hiroyuki Tano , Hideki Nishimura , Hiroshi Shiho
IPC分类号： B24D11/00
CPC分类号： B24D13/147 , B24B19/028 , B24D18/0009
摘要： The present invention relates to a method of manufacturing a chemical mechanical polishing pad which provides a chemical mechanical polishing pad which fully suppresses the occurrence of a scratch on the polished surface and has an excellent polishing rate.The method comprising either one of a group of steps (A) and a group of steps (B), the group of steps (A) including (A1) the step of preparing a composition for forming a chemical mechanical polishing pad; (A2) the step of molding the composition for forming a chemical mechanical polishing pad into a pad-like form; (A3) the step of mounting the pad-like form on the round table of a cutting machine having at least a milling unit equipped with a milling cutter, a drive unit capable of angle indexing and positioning and a round table journaled by the drive unit; (A4) the step of forming the second group of grooves with the milling cutter; and (A5) the step of forming the first group of grooves, and the group of steps (B) including (B1) the step of preparing a composition for forming a chemical mechanical polishing pad; (B2) the step of molding the composition for forming a chemical mechanical polishing pad into a pad-like form having the second group of grooves by using a metal mold having projections corresponding to the shapes of the second group of grooves; and (B3) the step of forming the first group of grooves.
摘要翻译：本发明涉及一种提供化学机械抛光垫的化学机械抛光垫的制造方法，该化学机械抛光垫完全抑制在抛光表面上产生划痕并具有优异的抛光速率。该方法包括一组步骤（A）和一组步骤（B）中的任一个，步骤（A）组包括（A1）制备用于形成化学机械抛光垫的组合物的步骤; （A2）将用于形成化学机械抛光垫的组合物成型为垫状的步骤; （A3）将垫状形状安装在具有至少铣削单元的切割机的圆台上的步骤，所述铣削单元配备有铣刀，能够进行角度分度和定位的驱动单元以及由驱动单元 ; （A4）利用铣刀形成第二组槽的步骤; 和（A5）形成第一组槽的步骤，以及包括（B1）制备用于形成化学机械抛光垫的组合物的步骤的步骤（B）的组; （B2）通过使用具有对应于第二组槽的形状的突起的金属模具将用于形成化学机械抛光垫的组合物模塑成具有第二组槽的垫状形状的步骤; 和（B3）形成第一组槽的步骤。

6. 发明授权

US07323415B2 Polishing pad for semiconductor wafer, polishing multilayered body for semiconductor wafer having same, and method for polishing semiconductor wafer 有权
标题翻译：用于半导体晶片的抛光垫，用于其半导体晶片的抛光多层体，以及用于研磨半导体晶片的方法
公开(公告)号：US07323415B2
公开(公告)日：2008-01-29
申请号：US10529742
申请日：2004-04-23
申请人： Hiroshi Shiho , Yukio Hosaka , Kou Hasegawa , Nobuo Kawahashi
发明人： Hiroshi Shiho , Yukio Hosaka , Kou Hasegawa , Nobuo Kawahashi
IPC分类号： H01L21/302
CPC分类号： B24B37/205
摘要： An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoints detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the present invention comprises a substrate 11 for a polishing pad provided with a through hole penetrating from surface to back, a light transmitting part 12 fitted in the through hole, the light transmitting part comprises a water-insoluble matrix material (1,2-polybutadiene) and a water-soluble particle (β-cyclodextrin) dispersed in the water-insoluble matrix material, and the water-soluble particle is less than 5% by volume based on 100% by volume of the total amount of the water-insoluble matrix material and the water-soluble particle. In addition, the laminated body for polishing of the present invention comprises a supporting layer on a backside of the polishing pad. These polishing pad and laminated body for polishing can comprise a fixing layer 13 on a backside.
摘要翻译：本发明的目的是提供一种用于半导体晶片的抛光垫和用于抛光其配备的半导体晶片的层叠体，其可以在不降低抛光性能的情况下进行光学终点检测以及半导体的抛光方法晶圆使用它们。本发明的抛光垫包括用于抛光垫的基板11，该抛光垫具有从表面向后穿透的通孔，安装在通孔中的透光部12，透光部包括水不溶性基质材料（1 ，2-聚丁二烯）和分散在水不溶性基质材料中的水溶性颗粒（β-环糊精），并且水溶性颗粒的体积百分比小于5体积％水不溶性基质材料和水溶性颗粒。另外，本发明的研磨用层叠体在研磨垫的背面具有支撑层。这些抛光垫和用于抛光的层压体可以在背面上包括固定层13。

7. 外观设计

USD559063S1 Polishing pad 失效
标题翻译：抛光垫
公开(公告)号：USD559063S1
公开(公告)日：2008-01-08
申请号：US29213405
申请日：2004-09-17
申请人： Takahiro Okamoto , Hiroshi Shiho
设计人： Takahiro Okamoto , Hiroshi Shiho

8. 发明授权

US07173180B2 Silane composition, silicon film forming method and solar cell production method 失效
标题翻译：硅烷组成，硅膜形成方法和太阳能电池的制备方法
公开(公告)号：US07173180B2
公开(公告)日：2007-02-06
申请号：US11404921
申请日：2006-04-17
申请人： Hiroshi Shiho , Hitoshi Kato
发明人： Hiroshi Shiho , Hitoshi Kato
IPC分类号： H01L31/0256
CPC分类号： H01L31/1804 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/14 , H01L21/228 , Y02E10/547 , Y02P70/521
摘要： A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.
摘要翻译：公开了一种用于制备太阳能电池半导体薄膜的硅烷组合物。硅烷组合物含有下式表示的聚硅烷化合物（n为3以上的整数，m为n〜（2n + 2）的整数）和m个R各自独立地为氢原子，烷基，苯基或卤素原子，条件是当全部m个R为氢原子且m = 2n时，n为7以上的整数）和至少一种选自环戊硅烷，环己硅烷和甲硅烷基环戊硅烷的硅烷化合物。

9. 发明申请

US20060128271A1 Polishing pad for semiconductor wafer and laminated body for polishing of semiconductor wafer equipped with the same as well as method for polishing of semiconductor wafer 有权
标题翻译：用于半导体晶片的抛光垫和用于抛光配备有其的半导体晶片的层叠体以及半导体晶片的抛光方法
公开(公告)号：US20060128271A1
公开(公告)日：2006-06-15
申请号：US10529742
申请日：2004-04-23
申请人： Hiroshi Shiho , Yukio Hosaka , Kuo Hasegawa , Nobuo Kawahashi
发明人： Hiroshi Shiho , Yukio Hosaka , Kuo Hasegawa , Nobuo Kawahashi
IPC分类号： B24B49/00 , B24B1/00 , B24B7/30
CPC分类号： B24B37/205
摘要： An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the present invention comprises a substrate 11 for a polishing pad provided with a through hole penetrating from surface to back, a light transmitting part 12 fitted in the through hole, the light transmitting part comprises a water-insoluble matrix material (1,2-polybutadiene) and a water-soluble particle (β-cyclodextrin) dispersed in the water-insoluble matrix material, and the water-soluble particle is less than 5% by volume based on 100% by volume of the total amount of the water-insoluble matrix material and the water-soluble particle. In addition, the laminated body for polishing of the present invention comprises a supporting layer on a backside of the polishing pad. These polishing pad and laminated body for polishing can comprise a fixing layer 13 on a backside.
摘要翻译：本发明的目的是提供一种用于半导体晶片的抛光垫和用于抛光配备有该半导体晶片的半导体晶片的半导体晶片的层叠体，其可以在不降低抛光性能的情况下进行光学终点检测以及半导体的抛光方法晶圆使用它们。本发明的抛光垫包括用于抛光垫的基板11，该抛光垫具有从表面向后穿透的通孔，安装在通孔中的透光部12，透光部包括水不溶性基质材料（1 ，2-聚丁二烯）和分散在水不溶性基质材料中的水溶性颗粒（β-环糊精），并且水溶性颗粒的体积百分比小于5体积％水不溶性基质材料和水溶性颗粒。另外，本发明的研磨用层叠体在研磨垫的背面具有支撑层。这些抛光垫和用于抛光的层压体可以在背面上包括固定层13。

10. 发明授权

US06976910B2 Polishing pad 有权
公开(公告)号：US06976910B2
公开(公告)日：2005-12-20
申请号：US10849782
申请日：2004-05-21
申请人： Yukio Hosaka , Hiroshi Shiho , Kou Hasegawa , Nobuo Kawahashi
发明人： Yukio Hosaka , Hiroshi Shiho , Kou Hasegawa , Nobuo Kawahashi
IPC分类号： B24B37/20 , B24B37/24 , B24D3/00 , B24D13/14 , H01L21/304 , B24D11/00
CPC分类号： B24B37/26
摘要： A polishing pad comprising a recessed portion in the non-polishing surface. This polishing pad can prevent the surface to be polished of an object from being scratched.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式