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1. 发明申请

US20120249986A1 DETERMINATION METHOD, CONTROL METHOD, DETERMINATION APPARATUS, PATTERN FORMING SYSTEM AND PROGRAM 有权
标题翻译：确定方法，控制方法，确定装置，图案形成系统和程序
公开(公告)号：US20120249986A1
公开(公告)日：2012-10-04
申请号：US13430905
申请日：2012-03-27
申请人： Keisuke Tanaka , Kazuo Sawai , Hiroshi Nagahata
发明人： Keisuke Tanaka , Kazuo Sawai , Hiroshi Nagahata
IPC分类号： G03B27/52
CPC分类号： H01J37/32642 , H01J37/32009 , H01J37/3244 , H01J37/32724 , H01J37/32807 , H01J37/3288 , H01J37/32972 , H01J37/3299 , H01J2237/334 , H01J2237/3343 , H01L21/3065
摘要： A determination method, a control method, a determination apparatus, a pattern forming system, and a storage medium can determine a replacement time of a focus ring accurately and quickly. The determination method is capable of determining the replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate. The determination method includes measuring a shape or a critical dimension of the pattern; and determining the replacement time of the focus ring based on the measured shape or the measured critical dimension of the pattern.
摘要翻译：确定方法，控制方法，确定装置，图案形成系统和存储介质可以准确且快速地确定对焦环的更换时间。确定方法能够确定围绕衬底的聚焦环的更换时间，以通过在衬底上蚀刻膜形成图案来增加衬底表面中的图案的均匀性。确定方法包括测量图案的形状或临界尺寸; 以及基于测量的形状或所测量的图案的临界尺寸来确定聚焦环的替换时间。

2. 发明授权

US09396911B2 Determination method, control method, determination apparatus, pattern forming system and program 有权
标题翻译：确定方法，控制方法，确定装置，图案形成系统和程序
公开(公告)号：US09396911B2
公开(公告)日：2016-07-19
申请号：US13430905
申请日：2012-03-27
申请人： Keisuke Tanaka , Kazuo Sawai , Hiroshi Nagahata
发明人： Keisuke Tanaka , Kazuo Sawai , Hiroshi Nagahata
IPC分类号： H01J37/32 , H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32009 , H01J37/3244 , H01J37/32724 , H01J37/32807 , H01J37/3288 , H01J37/32972 , H01J37/3299 , H01J2237/334 , H01J2237/3343 , H01L21/3065
摘要： A determination method, a control method, a determination apparatus, a pattern forming system, and a storage medium can determine a replacement time of a focus ring accurately and quickly. The determination method is capable of determining the replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate. The determination method includes measuring a shape or a critical dimension of the pattern; and determining the replacement time of the focus ring based on the measured shape or the measured critical dimension of the pattern.
摘要翻译：确定方法，控制方法，确定装置，图案形成系统和存储介质可以准确且快速地确定对焦环的更换时间。确定方法能够确定围绕衬底的聚焦环的更换时间，以通过在衬底上蚀刻膜形成图案来增加衬底表面中的图案的均匀性。确定方法包括测量图案的形状或临界尺寸; 以及基于测量的形状或所测量的图案的临界尺寸来确定聚焦环的替换时间。

3. 发明授权

US08058585B2 Plasma processing method, plasma processing apparatus and storage medium 有权
标题翻译：等离子体处理方法，等离子体处理装置和存储介质
公开(公告)号：US08058585B2
公开(公告)日：2011-11-15
申请号：US11716677
申请日：2007-03-12
申请人： Hiroki Amemiya , Akihito Toda , Hiroshi Nagahata
发明人： Hiroki Amemiya , Akihito Toda , Hiroshi Nagahata
IPC分类号： B23K9/02 , H01L27/14 , G02B3/00
CPC分类号： B29D11/00365 , G02B3/0012
摘要： A plasma processing method includes the steps of: loading a substrate on a lower electrode, the substrate having a resist mask formed on a transcription film; supplying a processing gas into a processing chamber; forming a magnetic field, which is oriented toward one direction and perpendicular to a line connecting an upper and the lower electrode; supplying a high frequency power to the lower electrode in the processing chamber to thereby form an electric field; converting the processing gas into a plasma by a magnetron discharge caused by a presence of an orthogonal electromagnetic field; and forming lenses on the transcription film by using the plasma. The high frequency power is supplied to the lower electrode while controlling the magnitude of the electric power divided by a surface area of the substrate to be in a range from about 1200 W/31415.9 mm2 to 2000 W/31415.9 mm2.
摘要翻译：等离子体处理方法包括以下步骤：在下电极上装载基板，所述基板具有形成在转印膜上的抗蚀剂掩模; 将处理气体供应到处理室中; 形成朝向一个方向并垂直于连接上电极和下电极的线的磁场; 向处理室中的下电极提供高频电力，从而形成电场; 通过存在正交电磁场的磁控管放电将处理气体转换成等离子体; 并通过使用等离子体在转录膜上形成透镜。将高频功率提供给下电极，同时将基板的表面积所分割的电力的大小控制在从大约1200W / 31415.9mm2到2000W / 31415.9mm2的范围内。

4. 发明申请

US20070221632A1 Plasma processing method, plasma processing apparatus and storage medium 有权
标题翻译：等离子体处理方法，等离子体处理装置和存储介质
公开(公告)号：US20070221632A1
公开(公告)日：2007-09-27
申请号：US11716677
申请日：2007-03-12
申请人： Hiroki Amemiya , Akihito Toda , Hiroshi Nagahata
发明人： Hiroki Amemiya , Akihito Toda , Hiroshi Nagahata
IPC分类号： B23K9/00
CPC分类号： B29D11/00365 , G02B3/0012
摘要： [Object]In forming micro lenses, a transcription film formed on a wafer is etched via a resist mask to thereby reduce distances between the micro lenses in a short period of time.[Constitution of the Invention]In performing an etching, a processing gas containing CF4 and C4F8 gas is supplied to a processing chamber and a high frequency power is supplied to a lower electrode such that the magnitude of the power divided by a surface area of a substrate is in a range from about 1200 W/31415.9 mm2 to 2000 W/31415.9 mm2. By converting the processing gas into a plasma, a deposition of deposits on sidewalls of the lenses formed on the resist mask is performed while performing the etching of the wafer, thereby forming the micro lenses.
摘要翻译：在形成微透镜中，通过抗蚀剂掩模蚀刻在晶片上形成的转印膜，从而在短时间内减少微透镜之间的距离。 [本发明的构成]在进行蚀刻时，将含有CF 4 C 4 C 8气体的处理气体供给到处理室并且将高频功率提供给下电极，使得功率除以基板表面积的大小在从约1200W / 31415.9mm 2至2000W / 31415.9的范围内 mm 2。通过将处理气体转化为等离子体，在进行晶片的蚀刻的同时进行在抗蚀剂掩模上形成的透镜的侧壁上的沉积物的沉积，从而形成微透镜。

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