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1. 发明授权

US5463272A Cathode for photoelectric emission, cathode for secondary electron emission, electron multiplier tube, and photomultiplier tube 失效
标题翻译：用于光电发射的阴极，用于二次电子发射的阴极，电子倍增管和光电倍增管
公开(公告)号：US5463272A
公开(公告)日：1995-10-31
申请号：US130897
申请日：1993-10-04
申请人： Yasushi Watase , Masao Kinoshita , Hiroyuki Watanabe , Takeo Hashimoto , Takehiro Iida , Hiroaki Washiyama
发明人： Yasushi Watase , Masao Kinoshita , Hiroyuki Watanabe , Takeo Hashimoto , Takehiro Iida , Hiroaki Washiyama
IPC分类号： H01J1/34 , H01J1/35 , H01J40/06 , H01J1/32
CPC分类号： H01J1/35
摘要： A cathode for photoelectric emission or a cathode for secondary electron emission comprises a thin film made of a material which emits photoelectrons by an incident light or emits secondary electrons by an electron input on a base substrate. The average particle size of the particles forming the thin film is 200 nm to 2000 nm. It is preferred that the average particle size is nearly equal to an average diffusion length of the particle of an excited electron. Further, the average particle size is preferably larger than the mean value of penetration lengths of inputted electrons or incident lights in the particles. Moreover, preferably convexities and/or concavities formed of particles each having the average particle size are formed over the surface of a plane for the incident light or electron input. Further, it is preferred that the thin film is activated by an alkali metal and is made of compounds of at least one kind of alkali metal and an antimony metal. Moreover, a layer having high reflectance against light is preferably inserted between the base substrate and the thin film. Thus, according to the cathode for photoelectric emission or the cathode for secondary electron emission, photoelectrons or secondary electrons are generated effectively and emitted from the cathode for photoelectric emission or the cathode for secondary electron emission.
摘要翻译：用于光电发射的阴极或用于二次电子发射的阴极包括由通过入射光发射光电子的材料制成的薄膜或通过基底衬底上的电子输入发射二次电子。形成薄膜的粒子的平均粒径为200nm〜2000nm。优选平均粒径几乎等于被激发电子的粒子的平均扩散长度。此外，平均粒径优选大于颗粒中输入的电子或入射光的穿透长度的平均值。此外，优选在平均粒径的颗粒形成的凸起和/或凹部在用于入射光或电子输入的平面的表面上形成。此外，优选薄膜由碱金属活化，并且由至少一种碱金属和锑金属的化合物制成。此外，优选地，在基底基板和薄膜之间插入具有高光反射率的层。因此，根据用于光电发射的阴极或用于二次电子发射的阴极，有效地产生光电子或二次电子并从用于光电发射的阴极或用于二次电子发射的阴极发射。

2. 发明授权

US5633562A Reflection mode alkali photocathode, and photomultiplier using the same 失效
标题翻译：反射模式碱性光电阴极和光电倍增管使用相同
公开(公告)号：US5633562A
公开(公告)日：1997-05-27
申请号：US318288
申请日：1994-10-05
申请人： Kazuyoshi Okano , Takehiro Iida , Tetsuo Murata , Nobuharu Suzuki , Hiroaki Washiyama , Yasushi Watase
发明人： Kazuyoshi Okano , Takehiro Iida , Tetsuo Murata , Nobuharu Suzuki , Hiroaki Washiyama , Yasushi Watase
IPC分类号： H01J1/34 , H01J43/08
CPC分类号： H01J1/34
摘要： This invention relates to an improvement of a reflection mode alkali photocathode which relies on controlling a deposition weight of antimony. The reflection mode alkali photocathode according to this invention includes a thin layer of antimony directly deposited on a base substrate and activated by alkali metals. The thin film of antimony is deposited in a thickness of below 100 .mu.g/cm.sup.2. This reflection mode photocathode is suitably usable in photomultipliers. As the base substrate, nickel, aluminium and stainless, etc. are used. As the alkali metals, cesium, potassium, sodium and rubidium are usable.
摘要翻译：本发明涉及依赖于控制锑沉积重量的反射模式碱性光电阴极的改进。根据本发明的反射模式碱性光电阴极包括直接沉积在基底上并由碱金属活化的锑薄层。锑薄膜的沉积厚度低于100μg/ cm2。该反射模式光电阴极适用于光电倍增管。作为基底，使用镍，铝和不锈钢等。作为碱金属，可以使用铯，钾，钠和铷。

3. 发明授权

US5623182A Reflections mode alkali photocathode and photomultiplier using the same 失效
标题翻译：反射模式碱性光电阴极和光电倍增管使用相同
公开(公告)号：US5623182A
公开(公告)日：1997-04-22
申请号：US630729
申请日：1996-04-10
申请人： Kazuyoshi Okano , Takehiro Iida , Tetsuo Murata , Nobuharu Suzuki , Hiroaki Washiyama , Yasushi Watase
发明人： Kazuyoshi Okano , Takehiro Iida , Tetsuo Murata , Nobuharu Suzuki , Hiroaki Washiyama , Yasushi Watase
IPC分类号： H01J1/34 , H01J40/06 , H01J43/04 , H01J43/08
CPC分类号： H01J1/34
摘要： This invention relates to an improvement of a reflection mode alkali photocathode which relies on controlling a deposition weight of antimony. The reflection mode alkali photocathode according to this invention includes a thin layer of antimony directly deposited on a base substrate and activated by alkali metals. The thin film of antimony is deposited in a thickness of below 100 .mu.g/cm.sup.2. This reflection mode photocathode is suitably usable in photomultipliers. As the base substrate, nickel, aluminium and stainless, etc. are used. As the alkali metals, cesium, potassium, sodium and rubidium are usable.
摘要翻译：本发明涉及依赖于控制锑沉积重量的反射模式碱光电阴极的改进。根据本发明的反射模式碱性光电阴极包括直接沉积在基底上并由碱金属活化的锑薄层。锑薄膜的沉积厚度低于100μg/ cm2。该反射模式光电阴极适用于光电倍增管。作为基底，使用镍，铝和不锈钢等。作为碱金属，可以使用铯，钾，钠和铷。

4. 发明授权

US5557166A Reflection-type photoelectronic surface and photomultiplier 失效
标题翻译：反射型光电子表面和光电倍增管
公开(公告)号：US5557166A
公开(公告)日：1996-09-17
申请号：US457744
申请日：1995-06-01
申请人： Yasushi Watase , Hiroaki Washiyama , Toshio Ikuma
发明人： Yasushi Watase , Hiroaki Washiyama , Toshio Ikuma
IPC分类号： H01J40/06 , H01J1/34 , H01J43/06 , H01J43/08 , H01J40/16
CPC分类号： H01J43/06 , H01J1/34 , H01J2201/3426
摘要： The photocathode according to this invention is characterized in that an aluminium thin film is formed on a substrate, and then an antimony thin layer is deposited directly on the aluminium thin film and is activated by an alkali metal. It is especially preferable that the antimony thin layer is deposited in a thickness of 15 .mu.g/cm.sup.2 to 45 .mu.g/cm.sup.2 and is activated by an alkali metal. Such reflection-type photocathode is applicable to photomultipliers. Among functions which are considered to be done by the Al film. which is in direct contact with the Sb layer, a first one is to prevent the alloying between the Sb layer and the substrate (e.g., Ni), and a second one is to augment a reflectance of light to be detected.
摘要翻译：根据本发明的光电阴极的特征在于在基板上形成铝薄膜，然后将锑薄层直接沉积在铝薄膜上并被碱金属活化。特别优选的是，锑薄层以15g / cm 2至45g / cm 2的厚度沉积，并被碱金属活化。这种反射型光电阴极适用于光电倍增管。被认为是由Al电影完成的功能。其与Sb层直接接触，第一种是防止Sb层和衬底（例如Ni）之间的合金化，第二种是增加要检测的光的反射率。

5. 发明授权

US5420476A Photomultiplier including election lens electrode 失效
标题翻译：光电倍增器包括选镜透镜电极
公开(公告)号：US5420476A
公开(公告)日：1995-05-30
申请号：US68220
申请日：1993-05-27
申请人： Kimitsugu Nakamura , Takeo Hashimoto , Hiroaki Washiyama , Tomihiko Kuroyanagi
发明人： Kimitsugu Nakamura , Takeo Hashimoto , Hiroaki Washiyama , Tomihiko Kuroyanagi
IPC分类号： H01J43/06 , H01J43/20 , H01J43/18
CPC分类号： H01J43/06
摘要： An electron lens electrode for guiding photoelectrons emitted from a photocathode to an electron multiplier section is arranged between the photocathode and the light-incident portion of a sealed container, and an opening is formed at a portion of the electron lens electrode opposing the light-incident portion. Incident light reaches the photocathode through the opening without being scattered or absorbed at all. The transmittance of light incident on a photomultiplier is improved, and the output waveform is uniformed, resulting in an improved S/N ratio.
摘要翻译：将用于将从光电阴极发射的光电子引导到电子倍增器部分的电子透镜电极布置在光电阴极和密封容器的光入射部分之间，并且在电子透镜电极的与光入射相对的部分处形成开口一部分。入射光通过开口到达光电阴极，完全不被散射或吸收。入射到光电倍增管上的光的透射率提高，输出波形均匀，导致S / N比提高。

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