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1. 发明授权

US07426016B2 Exposure apparatus and exposure method 有权
标题翻译：曝光装置和曝光方法
公开(公告)号：US07426016B2
公开(公告)日：2008-09-16
申请号：US11984351
申请日：2007-11-16
申请人： Noritoshi Takada , Seiji Tanaka , Kenji Noda , Hidekazu Kitahara
发明人： Noritoshi Takada , Seiji Tanaka , Kenji Noda , Hidekazu Kitahara
IPC分类号： G03B27/42 , G03B27/52
CPC分类号： G03B27/32 , G03F9/7026 , G03F9/7034
摘要： According to an exposure apparatus and an exposure method in the present invention, based on a focus value and a leveling value in each exposure shot calculated based on measurements by a focus sensor, differential absolute value for respective value are calculated. The differential absolute values for the focus values and leveling vaule are compared with predetermined threshold vaule for the respective differential absolute values. When the differential absolute values exceed the threshold value, it is determined that an exposure abnormality exists. In such case, based at least the number of exposure area where the exposure abnormality is occurred and distribution of the exposure area where the exposure abnormality is occurred on the object to be exposed, a kind of the exposure abnormality is identifed. The detection of the exposure abnormality is assured, and a cause of the abnormality is determined without lowering manufacturing capabilities and increasing in cost.
摘要翻译：根据本发明的曝光装置和曝光方法，基于基于由聚焦传感器的测量计算出的每个曝光拍摄中的对焦值和调平值，计算各个值的差分绝对值。对于相应的差分绝对值，将聚焦值和平整度的差分绝对值与预定阈值vaule进行比较。当差分绝对值超过阈值时，确定存在曝光异常。在这种情况下，至少基于曝光异常发生的曝光区域的数量和曝光异物发生的曝光区域的分布，识别曝光异常的种类。确保曝光异常的检测，并且在不降低制造能力和成本增加的情况下确定异常的原因。

2. 发明申请

US20070264007A1 Developing method and method for fabricating semiconductor device using the developing method 有权
标题翻译：使用显影方法制造半导体器件的显影方法和方法
公开(公告)号：US20070264007A1
公开(公告)日：2007-11-15
申请号：US11646420
申请日：2006-12-28
申请人： Hidekazu Kitahara , Kenji Noda , Kenichi Asahi , Naohiko Ujimaru , Hirofumi Fukumoto
发明人： Hidekazu Kitahara , Kenji Noda , Kenichi Asahi , Naohiko Ujimaru , Hirofumi Fukumoto
IPC分类号： G03B17/26
CPC分类号： G03F7/3021
摘要： In a developing method, a developer is supplied onto a resist film provided on a substrate, made of a resist and having an upper surface on which design patterns having different mask opening ratios are exposed and a development reaction is caused to proceed on the resist film with the supplied developer. After the development, the substrate is rotated so that the developer and the resist dissolved in the developer are removed. Then, a rinsing solution is supplied onto the resist film subjected to development and the substrate is rotated, thereby washing out the developer and the resist dissolved in the developer. The rotation speed of the substrate in removing the developer is a half or less of the rotation speed of the substrate in the rinsing step of washing out the resist.
摘要翻译：在显影方法中，将显影剂供给到设置在由抗蚀剂制成的基板上的抗蚀剂膜上，并且具有上表面，在该上表面上露出具有不同掩模开口率的设计图案并且使曝光反应在抗蚀剂膜上进行与供应的开发商。显影后，旋转基板，使得溶解在显影剂中的显影剂和抗蚀剂被去除。然后，将冲洗溶液供给到经过显影的抗蚀剂膜上，并且基板旋转，从而洗出显影剂和抗蚀剂溶解在显影剂中。基板在除去显影剂时的旋转速度是冲洗抗蚀剂的漂洗步骤中的基板旋转速度的一半或更少。

3. 发明授权

US07883840B2 Developing method and method for fabricating semiconductor device using the developing method 有权
标题翻译：使用显影方法制造半导体器件的显影方法和方法
公开(公告)号：US07883840B2
公开(公告)日：2011-02-08
申请号：US11646420
申请日：2006-12-28
申请人： Hidekazu Kitahara , Kenji Noda , Kenichi Asahi , Naohiko Ujimaru , Hirofumi Fukumoto
发明人： Hidekazu Kitahara , Kenji Noda , Kenichi Asahi , Naohiko Ujimaru , Hirofumi Fukumoto
IPC分类号： G03F7/32
CPC分类号： G03F7/3021
摘要： In a developing method, a developer is supplied onto a resist film provided on a substrate, made of a resist and having an upper surface on which design patterns having different mask opening ratios are exposed and a development reaction is caused to proceed on the resist film with the supplied developer. After the development, the substrate is rotated so that the developer and the resist dissolved in the developer are removed. Then, a rinsing solution is supplied onto the resist film subjected to development and the substrate is rotated, thereby washing out the developer and the resist dissolved in the developer. The rotation speed of the substrate in removing the developer is a half or less of the rotation speed of the substrate in the rinsing step of washing out the resist.
摘要翻译：在显影方法中，将显影剂供给到设置在由抗蚀剂制成的基板上的抗蚀剂膜上，并且具有上表面，在该上表面上露出具有不同掩模开口率的设计图案并且使曝光反应在抗蚀剂膜上进行与供应的开发商。显影后，旋转基板，使得溶解在显影剂中的显影剂和抗蚀剂被去除。然后，将冲洗溶液供给到经过显影的抗蚀剂膜上，并且基板旋转，从而洗出显影剂和抗蚀剂溶解在显影剂中。基板在除去显影剂时的旋转速度是冲洗抗蚀剂的漂洗步骤中的基板旋转速度的一半或更少。

4. 发明申请

US20080129978A1 Exposure apparatus and exposure method 有权
标题翻译：曝光装置和曝光方法
公开(公告)号：US20080129978A1
公开(公告)日：2008-06-05
申请号：US11984351
申请日：2007-11-16
申请人： Noritoshi Takada , Seiji Tanaka , Kenji Noda , Hidekazu Kitahara
发明人： Noritoshi Takada , Seiji Tanaka , Kenji Noda , Hidekazu Kitahara
IPC分类号： G03B27/32
CPC分类号： G03B27/32 , G03F9/7026 , G03F9/7034
摘要： According to an exposure apparatus and an exposure method in the present invention, based on a focus value and a leveling value in each exposure shot calculated based on measurements by a focus sensor, differential absolute values for respective values are calculated. The differential absolute values for the focus value and leveling value are compared with predetermined threshold value for the respective differential absolute values. When the differential absolute values exceed the threshold value, it is determined that an exposure abnormality exists. In such case, based on at least the number of exposure area where the exposure abnormality is occurred and distribution of the exposure area where the exposure abnormality is occurred on the object to be exposed, a kind of the exposure abnormality is identified. The detection of the exposure abnormality is assured, and a cause of the abnormality is determined without lowering manufacturing capabilities and increasing in costs.
摘要翻译：根据本发明的曝光装置和曝光方法，基于基于由聚焦传感器的测量计算的每个曝光拍摄中的对焦值和调平值，计算各个值的差分绝对值。将对焦值和调平值的差分绝对值与各个差分绝对值的预定阈值进行比较。当差分绝对值超过阈值时，确定存在曝光异常。在这种情况下，基于至少暴露异常的曝光区域的数量和曝光对象物上的曝光异常的曝光区域的分布，识别曝光异常的种类。确保曝光异常的检测，并且在不降低制造能力和成本增加的情况下确定异常的原因。

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