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1. 发明授权

US08154014B2 Organic thin film transistor and organic thin film light-emitting transistor 有权
标题翻译：有机薄膜晶体管和有机薄膜发光晶体管
公开(公告)号：US08154014B2
公开(公告)日：2012-04-10
申请号：US12675474
申请日：2008-08-29
申请人： Ichiro Tanaka , Hideji Osuga
发明人： Ichiro Tanaka , Hideji Osuga
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0074 , H01L51/0053 , H01L51/0068 , H01L51/0541 , H01L51/0545 , H01L51/0562 , H01L51/52 , H01L51/5203 , H01L51/5296
摘要： The present invention aims to provide an organic thin film transistor that is superior in stability in the atmosphere and that has a high operation speed. The organic thin film transistor according to the present invention includes three kinds of terminals consisting of a gate electrode, a source electrode, and a drain electrode, an insulator layer that insulates the gate electrode from the source electrode and from the drain electrode, and an organic semiconductor layer; the terminals, the insulator layer, and the organic semiconductor layer being disposed on a substrate; the organic thin film transistor controlling a source-to-drain electric current by a voltage applied to the gate electrode, and the organic thin film transistor is characterized by further including a crystallinity control layer that is formed from a crystalline compound that controls crystallinity of the organic semiconductor layer, and is characterized in that the organic semiconductor layer is formed on the crystallinity control layer and contains a compound having heterocyclic groups or a compound having a quinone structure. The organic thin film light-emitting transistor according to the present invention is characterized in that either one of the source electrode and the drain electrode of the organic thin film transistor is formed of a hole-injecting electrode, and the other electrode is formed of an electron-injecting electrode.
摘要翻译：本发明的目的在于提供一种在大气中稳定性优异并且具有高操作速度的有机薄膜晶体管。根据本发明的有机薄膜晶体管包括由栅电极，源电极和漏电极组成的三种端子，使栅极与源电极和漏电极绝缘的绝缘体层，以及有机半导体层; 端子，绝缘体层和有机半导体层设置在基板上; 所述有机薄膜晶体管通过施加到所述栅电极的电压来控制源极至漏极电流，并且所述有机薄膜晶体管的特征在于还包括由结晶化合物形成的结晶度控制层，所述结晶化合物控制所述晶体化合物的结晶度有机半导体层，其特征在于有机半导体层形成在结晶性控制层上，并含有具有杂环基的化合物或具有醌结构的化合物。根据本发明的有机薄膜发光晶体管的特征在于，有机薄膜晶体管的源电极和漏电极中的任一个由空穴注入电极形成，另一个电极由电子注入电极。

2. 发明申请

US20100244000A1 ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR 有权
标题翻译：有机薄膜晶体管和有机薄膜发光晶体管
公开(公告)号：US20100244000A1
公开(公告)日：2010-09-30
申请号：US12675474
申请日：2008-08-29
申请人： Ichiro Tanaka , Hideji Osuga
发明人： Ichiro Tanaka , Hideji Osuga
IPC分类号： H01L51/10 , H01L51/52 , H01L51/30
CPC分类号： H01L51/0074 , H01L51/0053 , H01L51/0068 , H01L51/0541 , H01L51/0545 , H01L51/0562 , H01L51/52 , H01L51/5203 , H01L51/5296
摘要： The present invention aims to provide an organic thin film transistor that is superior in stability in the atmosphere and that has a high operation speed. The organic thin film transistor according to the present invention includes three kinds of terminals consisting of a gate electrode, a source electrode, and a drain electrode, an insulator layer that insulates the gate electrode from the source electrode and from the drain electrode, and an organic semiconductor layer; the terminals, the insulator layer, and the organic semiconductor layer being disposed on a substrate; the organic thin film transistor controlling a source-to-drain electric current by a voltage applied to the gate electrode, and the organic thin film transistor is characterized by further including a crystallinity control layer that is formed from a crystalline compound that controls crystallinity of the organic semiconductor layer, and is characterized in that the organic semiconductor layer is formed on the crystallinity control layer and contains a compound having heterocyclic groups or a compound having a quinone structure. The organic thin film light-emitting transistor according to the present invention is characterized in that either one of the source electrode and the drain electrode of the organic thin film transistor is formed of a hole-injecting electrode, and the other electrode is formed of an electron-injecting electrode.
摘要翻译：本发明的目的在于提供一种在大气中稳定性优异并且具有高操作速度的有机薄膜晶体管。根据本发明的有机薄膜晶体管包括由栅电极，源电极和漏电极组成的三种端子，使栅极与源电极和漏电极绝缘的绝缘体层，以及有机半导体层; 端子，绝缘体层和有机半导体层设置在基板上; 所述有机薄膜晶体管通过施加到所述栅电极的电压来控制源极至漏极电流，并且所述有机薄膜晶体管的特征在于还包括由结晶化合物形成的结晶度控制层，所述结晶化合物控制所述晶体化合物的结晶度有机半导体层，其特征在于有机半导体层形成在结晶性控制层上，并含有具有杂环基的化合物或具有醌结构的化合物。根据本发明的有机薄膜发光晶体管的特征在于，有机薄膜晶体管的源电极和漏电极中的任一个由空穴注入电极形成，另一个电极由电子注入电极。

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