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    • 5. 发明申请
    • SUBSTRATE PROCESSING APPARATUS
    • 基板加工设备
    • US20100154711A1
    • 2010-06-24
    • US12644318
    • 2009-12-22
    • Kiyohisa ISHIBASHIFumihide IKEDAMasaaki UENOTakahiro MAEDAYasuhiro INOKUCHIYasuo KUNIIHidehiro YANAGAWA
    • Kiyohisa ISHIBASHIFumihide IKEDAMasaaki UENOTakahiro MAEDAYasuhiro INOKUCHIYasuo KUNIIHidehiro YANAGAWA
    • C23C16/00
    • C23C16/4586C23C16/45502C23C16/45578H01L21/67011H01L21/67109H01L21/67309
    • Films are formed on a plurality of substrates through a batch process while preventing formation of films on the rear surfaces of the substrates. For this, a substrate processing apparatus comprises a reaction vessel, supports, a support holder, and an induction heating device. The reaction vessel is configured to process substrates therein. The supports are made of a conductive material and having a disk shape, and each of the supports is configured to accommodate a substrate in its concave part in a state where the substrate is horizontally positioned with a top surface of the substrate being exposed. The concave part is formed concentrically with a circumference of the support, and a difference between radii of the support and the concave part is greater than a distance between neighboring two of the supports held by the support holder. The support holder is configured to hold at least the supports horizontally in multiple stages. The induction heating device is configured to heat at least the supports held by the support holder inside the reaction vessel by using an induction heating method.
    • 通过间歇工艺在多个基板上形成膜,同时防止在基板的后表面上形成膜。 为此,基板处理装置包括反应容器,支撑件,支撑架和感应加热装置。 反应容器被配置为在其中处理基板。 支撑体由导电材料制成并且具有圆盘形状,并且每个支撑件构造成在基板被暴露的顶表面的水平位置的状态下容纳其凹部中的基板。 凹部与支撑体的圆周同心地形成,并且支撑件的半径与凹部之间的差大于由支撑保持器保持的相邻的两个支撑件之间的距离。 支撑架被配置成在多个阶段中至少水平地保持支撑件。 感应加热装置通过使用感应加热方法,至少将由支撑架保持的支撑体加热到反应容器内部。