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1. 发明授权

US5363327A Buried-sidewall-strap two transistor one capacitor trench cell 失效
标题翻译：埋层侧壁带两个晶体管一个电容器沟槽电池
公开(公告)号：US5363327A
公开(公告)日：1994-11-08
申请号：US6087
申请日：1993-01-19
申请人： Henkles, Walter H. , Wei Hwang
发明人： Henkles, Walter H. , Wei Hwang
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , G11C13/00
CPC分类号： H01L27/10844 , H01L27/108
摘要： A two transistor one capacitor DRAM cell configured with respect to a bit line pair and a single word line in which the gates of the two transistors are connected to the single word line and one of the source/drains of each transistor is connected to a respective electrode of the capacitor and the other of the source/drains of the transistors is connected to a respective bit line of a complementary bit line pair. The storage capacitor is a three dimensional structure with both electrodes being electrically well isolated from electrodes of all other cell storage capacitors. A stacked in trench cell fabrication design is disclosed having a buried strap for connecting the outer electrode to a diffusion region of one transistor and a surface strap for connecting the inner electrode to a diffusion region of the second access transistor.
摘要翻译：相对于位线对和单个字线配置的两晶体管一电容器DRAM单元，其中两个晶体管的栅极连接到单个字线，并且每个晶体管的源极/漏极之一连接到相应的电容器的电极和晶体管的源/漏极中的另一个连接到互补位线对的相应位线。存储电容器是三维结构，其中两个电极与所有其它电池存储电容器的电极电绝缘。公开了一种堆叠的沟槽电池制造设计，其具有用于将外部电极连接到一个晶体管的扩散区域的掩埋带和用于将内部电极连接到第二存取晶体管的扩散区域的表面带。

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