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1. 发明授权

US08533651B1 Providing conversion of a planar design to a FinFET design 有权
标题翻译：提供平面设计到FinFET设计的转换
公开(公告)号：US08533651B1
公开(公告)日：2013-09-10
申请号：US13552313
申请日：2012-07-18
申请人： Soon Yoeng Tan , Angeline Ho , Hendry Renaldo , Andreas Knorr , Scott Johnson
发明人： Soon Yoeng Tan , Angeline Ho , Hendry Renaldo , Andreas Knorr , Scott Johnson
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G06F17/5077
摘要： An approach for providing conversion of a planar design to a FinFET design is disclosed. Embodiments include: receiving a planar design having a plurality of diffusion regions; overlapping a plurality of parallel fin mandrels with a plurality of evenly-spaced parallel lines of a grid; snapping the diffusion regions to the grid based on the parallel lines; and generating a FinFET design based on the overlapping and the snapping. Embodiments include the parallel lines and the parallel fin mandrels being perpendicular to a poly orientation associated with the planar design, and determining a spacing length between the parallel lines; determining a plurality of edges of the diffusion regions that are parallel to the poly orientation; and cropping the diffusion regions until each of the edges has a length that is a multiple of the spacing length.
摘要翻译：公开了一种将平面设计转换成FinFET设计的方法。实施例包括：接收具有多个扩散区域的平面设计; 将多个平行翅片心轴与网格的多个均匀间隔平行的线重叠; 基于平行线将扩散区捕捉到栅格; 并基于重叠和捕捉产生FinFET设计。实施例包括垂直于与平面设计相关联的聚取向并且确定平行线之间的间隔长度的平行线和平行翅片心轴; 确定所述扩散区域的平行于所述聚取向的多个边缘; 并且切割扩散区域，直到每个边缘具有为间隔长度的倍数的长度。

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