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1. 发明授权

US08815658B2 Hetero-structured inverted-T field effect transistor 有权
标题翻译：异构结构的倒T型场效应晶体管
公开(公告)号：US08815658B2
公开(公告)日：2014-08-26
申请号：US13584673
申请日：2012-08-13
申请人： Hemant Adhikari , Rusty Harris
发明人： Hemant Adhikari , Rusty Harris
IPC分类号： H01L21/338 , H01L21/8234
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/7853 , H01L29/78687
摘要： The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer.
摘要翻译：本发明提供一种形成晶体管的方法。该方法包括在绝缘层上形成第一半导体材料的第一层。选择第一半导体材料以向第一载体类型提供高迁移率。该方法还包括在第一半导体材料层之上形成第二半导体材料的第二层。选择第二半导体材料以向与第一载体类型相反的第二载体类型提供高迁移率。该方法还包括形成邻近第二层的第一掩蔽层，并通过第一掩蔽层蚀刻第二层，以在第二层中形成至少一个特征。第二层中的每个特征形成具有第二层的一部分的倒T形。

2. 发明申请

US20120280250A1 SPACER AS HARD MASK SCHEME FOR IN-SITU DOPING IN CMOS FINFETS 失效
标题翻译：间隔器作为CMOS熔体中的现场掺杂的硬掩模方案
公开(公告)号：US20120280250A1
公开(公告)日：2012-11-08
申请号：US13100589
申请日：2011-05-04
申请人： Veeraraghavan S. Basker , Kangguo Cheng , Bruce B. Doris , Johnathan E. Faltermeier , Sivananda K. Kanakasabapathy , Hemant Adhikari
发明人： Veeraraghavan S. Basker , Kangguo Cheng , Bruce B. Doris , Johnathan E. Faltermeier , Sivananda K. Kanakasabapathy , Hemant Adhikari
IPC分类号： H01L27/092 , H01L21/8238 , H01L21/336 , H01L29/78
CPC分类号： H01L21/823821 , H01L21/845 , H01L27/0924 , H01L27/1211
摘要： A method of fabricating a semiconductor device that includes at least two fin structures, wherein one of the at least two fin structures include epitaxially formed in-situ doped second source and drain regions having a facetted exterior sidewall that are present on the sidewalls of the fin structure. In another embodiment, the disclosure also provides a method of fabricating a finFET that includes forming a recess in a sidewall of a fin structure, and epitaxially forming an extension dopant region in the recess that is formed in the fin structure. Structures formed by the aforementioned methods are also described.
摘要翻译：一种制造半导体器件的方法，其包括至少两个翅片结构，其中所述至少两个翅片结构中的一个包括外延形成的原位掺杂的第二源极和漏极区域，其具有存在于鳍的侧壁上的刻面外侧壁结构体。在另一个实施例中，本发明还提供一种制造finFET的方法，其包括在鳍结构的侧壁中形成凹槽，并且在形成在鳍结构中的凹槽中外延形成延伸掺杂区域。还描述了通过上述方法形成的结构。

3. 发明授权

US08101486B2 Methods for forming isolated fin structures on bulk semiconductor material 有权
公开(公告)号：US08101486B2
公开(公告)日：2012-01-24
申请号：US12575344
申请日：2009-10-07
申请人： Witold Maszara , Hemant Adhikari
发明人： Witold Maszara , Hemant Adhikari
IPC分类号： H01L21/8238 , H01L21/335 , H01L21/336 , H01L21/8234
CPC分类号： H01L29/785 , H01L29/66795
摘要： Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.

4. 发明申请

US20130005114A1 METHODS FOR FORMING ISOLATED FIN STRUCTURES ON BULK SEMICONDUCTOR MATERIAL 有权
标题翻译：在半导体材料上形成分离的结构的方法
公开(公告)号：US20130005114A1
公开(公告)日：2013-01-03
申请号：US13611193
申请日：2012-09-12
申请人： Witold MASZARA , Hemant ADHIKARI
发明人： Witold MASZARA , Hemant ADHIKARI
IPC分类号： H01L21/762
CPC分类号： H01L29/785 , H01L29/66795
摘要： Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.
摘要翻译：提供了制造半导体器件的方法。一种方法包括形成覆盖在本体衬底上的第一半导体材料层，并形成覆盖第一半导体材料层的第二半导体材料层。该方法还包括在第二半导体材料的层上形成鳍状图案掩模，并使用鳍状图案掩模作为蚀刻掩模，各向异性蚀刻第二半导体材料的层和第一半导体材料的层。各向异性蚀刻导致由第二半导体材料形成的翅片和鳍下方的第一半导体材料的暴露区域。该方法还包括在鳍片下方的第一半导体材料的暴露区域中形成隔离层。

5. 发明授权

US08288756B2 Hetero-structured, inverted-T field effect transistor 有权
标题翻译：异构结构，倒T型场效应晶体管
公开(公告)号：US08288756B2
公开(公告)日：2012-10-16
申请号：US11948235
申请日：2007-11-30
申请人： Hemant Adhikari , Rusty Harris
发明人： Hemant Adhikari , Rusty Harris
IPC分类号： H01L29/06 , H01L29/04
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/7853 , H01L29/78687
摘要： The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer.
摘要翻译：本发明提供一种形成晶体管的方法。该方法包括在绝缘层上形成第一半导体材料的第一层。选择第一半导体材料以向第一载体类型提供高迁移率。该方法还包括在第一半导体材料层之上形成第二半导体材料的第二层。选择第二半导体材料以向与第一载体类型相反的第二载体类型提供高迁移率。该方法还包括形成邻近第二层的第一掩蔽层，并通过第一掩蔽层蚀刻第二层，以在第二层中形成至少一个特征。第二层中的每个特征形成具有第二层的一部分的倒T形。

6. 发明授权

US08859389B2 Methods of making fins and fin field effect transistors (FinFETs) 有权
标题翻译：制造鳍片和鳍场效应晶体管（FinFET）的方法
公开(公告)号：US08859389B2
公开(公告)日：2014-10-14
申请号：US13015857
申请日：2011-01-28
申请人： Hirohisa Kawasaki , Basker Veeraraghavan , Hemant Adhikari , Witold Maszara
发明人： Hirohisa Kawasaki , Basker Veeraraghavan , Hemant Adhikari , Witold Maszara
IPC分类号： H01L21/76 , H01L21/336 , H01L21/8234 , H01L29/66 , H01L29/78
CPC分类号： H01L29/66795 , H01L29/785
摘要： Methods of making fins and semiconductor structures containing fins are provided. The methods involve forming a multi-layer structure over a semiconductor substrate. The multi-layer structure comprises a first layer over the semiconductor substrate, a second layer over the first layer, and a third layer over the second layer. The method also comprises removing upper portions of the semiconductor substrate and portions of the multi-layer structure to form fins of the semiconductor substrate and portions of the multi-layer structure. Further, the method comprises selectively oxidizing the first layer while oxidization of the second layer and the third layer is less than the oxidization of the first layer. The oxidation can be performed before gap fill recess or after gap fill recess.
摘要翻译：提供制造散热片和包含散热片的半导体结构的方法。所述方法包括在半导体衬底上形成多层结构。多层结构包括半导体衬底上的第一层，第一层上的第二层和第二层上的第三层。该方法还包括去除半导体衬底的上部和多层结构的部分以形成半导体衬底的鳍片和多层结构的部分。此外，该方法包括选择性地氧化第一层，同时氧化第二层，第三层小于第一层的氧化。可以在间隙填充凹部之前或间隙填充凹部之后进行氧化。

7. 发明授权

US08334177B2 Methods for forming isolated fin structures on bulk semiconductor material 有权
标题翻译：在体半导体材料上形成隔离鳍结构的方法
公开(公告)号：US08334177B2
公开(公告)日：2012-12-18
申请号：US13278010
申请日：2011-10-20
申请人： Witold Maszara , Hemant Adhikari
发明人： Witold Maszara , Hemant Adhikari
IPC分类号： H01L21/84 , H01L21/8238 , H01L21/336
CPC分类号： H01L29/785 , H01L29/66795
摘要： Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.
摘要翻译：提供了制造半导体器件的方法。一种方法包括形成覆盖在本体衬底上的第一半导体材料层，并形成覆盖第一半导体材料层的第二半导体材料层。该方法还包括在第二半导体材料的层上形成鳍状图案掩模，并使用鳍状图案掩模作为蚀刻掩模，各向异性蚀刻第二半导体材料的层和第一半导体材料的层。各向异性蚀刻导致由第二半导体材料形成的翅片和鳍下方的第一半导体材料的暴露区域。该方法还包括在鳍片下方的第一半导体材料的暴露区域中形成隔离层。

8. 发明申请

US20120309141A1 HETERO-STRUCTURED INVERTED-T FIELD EFFECT TRANSISTOR 有权
标题翻译：异构结构的反相场效应晶体管
公开(公告)号：US20120309141A1
公开(公告)日：2012-12-06
申请号：US13584673
申请日：2012-08-13
申请人： Hemant Adhikari , Rusty Harris
发明人： Hemant Adhikari , Rusty Harris
IPC分类号： H01L21/335
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/7853 , H01L29/78687
摘要： The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer.
摘要翻译：本发明提供一种形成晶体管的方法。该方法包括在绝缘层上形成第一半导体材料的第一层。选择第一半导体材料以向第一载体类型提供高迁移率。该方法还包括在第一半导体材料层之上形成第二半导体材料的第二层。选择第二半导体材料以向与第一载体类型相反的第二载体类型提供高迁移率。该方法还包括形成邻近第二层的第一掩蔽层，并通过第一掩蔽层蚀刻第二层，以在第二层中形成至少一个特征。第二层中的每个特征形成具有第二层的一部分的倒T形。

9. 发明申请

US20120040517A1 METHODS FOR FORMING ISOLATED FIN STRUCTURES ON BULK SEMICONDUCTOR MATERIAL 有权
标题翻译：在半导体材料上形成分离的结构的方法
公开(公告)号：US20120040517A1
公开(公告)日：2012-02-16
申请号：US13278010
申请日：2011-10-20
申请人： Witold MASZARA , Hemant ADHIKARI
发明人： Witold MASZARA , Hemant ADHIKARI
IPC分类号： H01L21/20 , H01L21/302
CPC分类号： H01L29/785 , H01L29/66795
摘要： Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.
摘要翻译：提供了制造半导体器件的方法。一种方法包括形成覆盖在本体衬底上的第一半导体材料层，并形成覆盖第一半导体材料层的第二半导体材料层。该方法还包括在第二半导体材料的层上形成鳍状图案掩模，并使用鳍状图案掩模作为蚀刻掩模，各向异性蚀刻第二半导体材料的层和第一半导体材料的层。各向异性蚀刻导致由第二半导体材料形成的翅片和鳍下方的第一半导体材料的暴露区域。该方法还包括在鳍片下方的第一半导体材料的暴露区域中形成隔离层。

10. 发明申请

US20110081764A1 METHODS FOR FORMING ISOLATED FIN STRUCTURES ON BULK SEMICONDUCTOR MATERIAL 有权
标题翻译：在半导体材料上形成分离的结构的方法
公开(公告)号：US20110081764A1
公开(公告)日：2011-04-07
申请号：US12575344
申请日：2009-10-07
申请人： Witold MASZARA , Hemant ADHIKARI
发明人： Witold MASZARA , Hemant ADHIKARI
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L29/785 , H01L29/66795
摘要： Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.
摘要翻译：提供了制造半导体器件的方法。一种方法包括形成覆盖在本体衬底上的第一半导体材料层，并形成覆盖第一半导体材料层的第二半导体材料层。该方法还包括在第二半导体材料的层上形成鳍状图案掩模，并使用鳍状图案掩模作为蚀刻掩模，各向异性蚀刻第二半导体材料的层和第一半导体材料的层。各向异性蚀刻导致由第二半导体材料形成的翅片和鳍下方的第一半导体材料的暴露区域。该方法还包括在鳍片下方的第一半导体材料的暴露区域中形成隔离层。

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