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1. 发明申请

US20060192289A1 Integrated connection arrangements 有权
公开(公告)号：US20060192289A1
公开(公告)日：2006-08-31
申请号：US11350518
申请日：2006-02-09
申请人： Stefan Drexl , Thomas Goebel , Johann Helneder , Martina Hommel , Wolfgang Klein , Heinrich Korner , Andrea Mitchell , Markus Schwerd , Martin Seck
发明人： Stefan Drexl , Thomas Goebel , Johann Helneder , Martina Hommel , Wolfgang Klein , Heinrich Korner , Andrea Mitchell , Markus Schwerd , Martin Seck
IPC分类号： H01L23/52
CPC分类号： H01L24/05 , H01L23/53228 , H01L24/03 , H01L24/48 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05553 , H01L2224/05554 , H01L2224/05567 , H01L2224/05624 , H01L2224/48463 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01061 , H01L2924/01068 , H01L2924/01073 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/19043 , H01L2924/30105 , H01L2224/45099
摘要： A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

2. 发明申请

US20050012223A1 Integrated semiconductor product with metal-insulator-metal capacitor 有权
标题翻译：集成半导体产品与金属 - 绝缘体 - 金属电容器
公开(公告)号：US20050012223A1
公开(公告)日：2005-01-20
申请号：US10865463
申请日：2004-06-10
申请人： Klaus Koller , Heinrich Korner , Michael Schrenk
发明人： Klaus Koller , Heinrich Korner , Michael Schrenk
IPC分类号： H01L21/02 , H01L21/768 , H01L29/76 , H01L21/4763
CPC分类号： H01L28/75 , H01L21/76838 , H01L28/55
摘要： To fabricate an integrated semiconductor product with integrated metal-insulator-metal capacitor, first of all a dielectric auxiliary layer (6) is deposited on a first electrode (2, 3, 5). This auxiliary layer (6) is then opened up (15) via the first electrode. Then, a dielectric layer (7) is produced, and the metal track stack (8, 9, 10) for the second electrode is then applied to the dielectric layer (6). This is followed by the patterning of the metal-insulator-metal capacitor using known etching processes. This makes it possible to produce dielectric capacitor layers of any desired thickness using materials which can be selected as desired. In particular, this has the advantage that via etches can be carried out significantly more easily than in the prior art, since it is not necessary to etch through the residual dielectric capacitor layer above the metal tracks.
摘要翻译：为了制造具有集成金属 - 绝缘体 - 金属电容器的集成半导体产品，首先将介电辅助层（6）沉积在第一电极（2,3,5）上。然后，该辅助层（6）经由第一电极打开（15）。然后，制造电介质层（7），然后将用于第二电极的金属轨道堆叠（8,9,10）施加到电介质层（6）。然后使用已知的蚀刻工艺对金属 - 绝缘体 - 金属电容器进行图案化。这使得可以使用可以根据需要选择的材料来制造任何所需厚度的介电电容器层。特别地，这具有以下优点：通过蚀刻可以比现有技术更容易地进行蚀刻，因为不需要通过金属轨道上方的残留介电电容器层进行蚀刻。

3. 发明申请

US20060214265A1 Integrated circuit with capacitor and method for the production thereof 有权
公开(公告)号：US20060214265A1
公开(公告)日：2006-09-28
申请号：US11368254
申请日：2006-03-03
申请人： Thomas Goebel , Johann Helneder , Heinrich Korner , Andrea Mitchell , Markus Schwerd , Martin Seck , Holger Torwesten
发明人： Thomas Goebel , Johann Helneder , Heinrich Korner , Andrea Mitchell , Markus Schwerd , Martin Seck , Holger Torwesten
IPC分类号： H01L29/00
CPC分类号： H01L28/40 , H01L21/31687 , H01L23/5223 , H01L23/5228 , H01L27/016 , H01L27/0802 , H01L27/0805 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.

4. 发明授权

US5526122A Method for determining the mass flow of gases on the basis of optical absorption and employment of said method 失效
标题翻译：基于所述方法的光学吸收和使用来确定气体的质量流量的方法
公开(公告)号：US5526122A
公开(公告)日：1996-06-11
申请号：US137079
申请日：1994-03-14
申请人： Andreas Intemann , Heinrich Korner , Konrad Hieber
发明人： Andreas Intemann , Heinrich Korner , Konrad Hieber
IPC分类号： G01F1/86 , G01F1/00 , G01F1/66 , G01F1/704 , G01N21/37 , G01N21/59 , H01L21/00 , G01N21/85
CPC分类号： H01L21/67017 , G01F1/00 , G01F1/661 , G01F1/704 , G01F1/86 , G01N21/37 , G01N21/59
摘要： In the method, the totality of the gases is conducted through an absorption cell. A reference cell contains a reference gas. The cells are optically transirradiated and a signal representing a quantity for the mass flow to be identified is generated in a detector which picks up the optical radiation emerging from the cells.
摘要翻译： PCT No.PCT / DE92 / 00157 Sec。 371日期：1994年3月14日 102（e）1994年3月14日PCT提交1992年2月27日PCT公布。公开号WO93 / 17304 日期为1993年9月2日。在该方法中，气体的总量通过吸收池进行。参考单元包含参考气体。细胞被光学辐照，并且在检测器中产生表示要识别的质量流量的信号，该检测器拾取从细胞出射的光辐射。

5. 发明授权

US1442670A Tool for cleaning the interior of tubes 失效
标题翻译：用于清洁管内部的工具
公开(公告)号：US1442670A
公开(公告)日：1923-01-16
申请号：US49773521
申请日：1921-09-01
申请人： HEINRICH KORNER
发明人： HEINRICH KORNER
IPC分类号： B08B9/04
CPC分类号： B08B9/0436

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