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1. 发明申请

US20130104773A1 INDIUM OXOALKOXIDES FOR PRODUCING COATINGS CONTAINING INDIUM OXIDE 有权
标题翻译：用于生产包含氧化铝的涂料的氧化铝氧化物
公开(公告)号：US20130104773A1
公开(公告)日：2013-05-02
申请号：US13809423
申请日：2011-07-12
申请人： Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
发明人： Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
IPC分类号： C07F5/00
CPC分类号： C07F5/003 , C07C31/28 , C09D1/00 , C23C18/1216
摘要： The present invention relates to halogenated indium oxo alkoxides of the generic formula In7O2(OH)(OR)12X4(ROH)x where R=C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl, X=F, Cl, Br, I and x=0 to 10, to processes for preparation thereof and to use thereof.
摘要翻译：本发明涉及通式为InO 2 O（OH）（OR）12 X 4（ROH）x的卤代卤代烷氧基化物，其中R = C 1 -C 15 - 烷基，C 1 -C 15 - 烯基，C 1 -C 15 - 炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基 - 或C 7 -C 15 - 烷氧基芳基，X = F，Cl，Br，I和x = 0至10，用于其制备和使用。

2. 发明申请

US20110315982A1 METHOD FOR PRODUCING SEMICONDUCTING INDIUM OXIDE LAYERS, INDIUM OXIDE LAYERS PRODUCED ACCORDING TO SAID METHOD AND THEIR USE 有权
标题翻译：生产半导体氧化物层的方法，根据方法生产的氧化铝层及其使用方法
公开(公告)号：US20110315982A1
公开(公告)日：2011-12-29
申请号：US13201107
申请日：2010-02-05
申请人： Arne Hoppe , Alexey Merkulov , Juergen Steiger , Duy Vu Pham , Yvonne Damaschek , Heiko Thiem
发明人： Arne Hoppe , Alexey Merkulov , Juergen Steiger , Duy Vu Pham , Yvonne Damaschek , Heiko Thiem
IPC分类号： H01L21/368 , H01L29/24
CPC分类号： C23C18/1216
摘要： The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the layers producible by this process, and to the use thereof.
摘要翻译：本发明涉及一种生产半导体氧化铟层的方法，其中衬底被涂覆有液体，无水组合物，其包含a）至少一种铟醇盐和b）至少一种溶剂，任选地在更大的温度下进行干燥和热处理超过250℃，可通过该方法生产的层及其用途。

3. 发明授权

US09315901B2 Method for the production of layers containing indium oxide 有权
标题翻译：用于生产含有氧化铟的层的方法
公开(公告)号：US09315901B2
公开(公告)日：2016-04-19
申请号：US13391114
申请日：2010-08-13
申请人： Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
发明人： Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
IPC分类号： C23C18/12
CPC分类号： C23C18/1216 , C23C18/1258
摘要： The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R′, R″=organic radical, X=F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.
摘要翻译：本发明涉及一种从非水溶液制备含氧化铟含量层的液相方法，其中含有至少一种通式M x O y（OR）z [O（R'O）c H] aXb [R“OH] d，其中x = 3-25，y = 1-10，z = 3-50，a = 0-25，b = 0-20，c = 0-1，d = M = In，R，R'，R“=有机基团，X = F，Cl，Br，I和至少一种溶剂施加到基材上，任选地干燥，并转化为含氧化铟的层，可通过本发明方法生产的层及其用途。

4. 发明授权

US09309595B2 Method for the production of metal oxide-containing layers 有权
标题翻译：用于生产含金属氧化物的层的方法
公开(公告)号：US09309595B2
公开(公告)日：2016-04-12
申请号：US13390840
申请日：2010-08-13
申请人： Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
发明人： Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
IPC分类号： C23C18/12
CPC分类号： C23C18/1216 , C23C18/1258
摘要： The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d, where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R′, R″=organic group, X═F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.
摘要翻译：本发明涉及一种从非水溶液中生产含金属氧化物的层的液相方法。在所述方法中，无水组合物含有i）至少一种通式为MxOy（OR）z [O（R'O）cH] aXb [R“OH] d的金属氧代 - 醇盐，其中M = In，Ga，Sn ，和/或Zn，x = 3-25，y = 1-10，z = 3-50，a = 0-25，b = 0-20，c = 0-1，d = 0-25，R， R'，R“=有机基团，X = F，Cl，Br，I和ii）将至少一种溶剂施加到基材上，任选地干燥，并转化为含金属氧化物的层。本发明还涉及可以使用本发明的方法生产的层及其用途。

5. 发明授权

US09194046B2 Method for producing semiconducting indium oxide layers, indium oxide layers produced according to said method and their use 有权
标题翻译：用于制造半导体氧化铟层的方法，根据所述方法制备的氧化铟层及其用途
公开(公告)号：US09194046B2
公开(公告)日：2015-11-24
申请号：US13201107
申请日：2010-02-05
申请人： Arne Hoppe , Alexey Merkulov , Juergen Steiger , Duy Vu Pham , Yvonne Damaschek , Heiko Thiem
发明人： Arne Hoppe , Alexey Merkulov , Juergen Steiger , Duy Vu Pham , Yvonne Damaschek , Heiko Thiem
IPC分类号： H01L51/40 , H01L21/44 , C23C18/12
CPC分类号： C23C18/1216
摘要： The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the layers producible by this process, and to the use thereof.
摘要翻译：本发明涉及一种生产半导体氧化铟层的方法，其中衬底被涂覆有液体，无水组合物，其包含a）至少一种铟醇盐和b）至少一种溶剂，任选地在更大的温度下进行干燥和热处理超过250℃，可通过该方法生产的层及其用途。

6. 发明授权

US08907333B2 Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite 有权
标题翻译：含热解氧化锌的复合层和场效应晶体管包括该复合材料
公开(公告)号：US08907333B2
公开(公告)日：2014-12-09
申请号：US12596150
申请日：2008-03-10
申请人： Frank-Martin Petrat , Heiko Thiem , Sven Hill , Andre Ebbers , Koshi Okamura , Roland Schmechel
发明人： Frank-Martin Petrat , Heiko Thiem , Sven Hill , Andre Ebbers , Koshi Okamura , Roland Schmechel
IPC分类号： H01L21/00 , H01L21/16 , H01L21/3205 , H01L29/786
CPC分类号： H01L21/32055 , H01L29/7869
摘要： Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.
摘要翻译：包括电介质层和包含热解氧化锌并结合到电介质层的层的层的复合物。制造层的复合体的方法，其中将热解氧化锌以平均聚集体直径小于200nm的存在氧化锌颗粒的分散体形式施加到电介质层，氧化锌层干燥，然后在小于200℃的温度下处理。制备层的复合物的方法，其中将热解氧化锌施加到基质层或基质层的复合物，其中锌的分散体存在平均聚集体直径小于200nm的氧化物颗粒以形成氧化锌层，然后在小于200℃的温度下处理氧化锌层和基底层，然后施加电介质层到氧化锌层。具有复合层的场效应晶体管。

7. 发明授权

US08889476B2 Formulations comprising a mixture of ZnO cubanes and process using them to produce semiconductive ZnO layers 有权
标题翻译：包含ZnO立方体的混合物的制剂和使用它们制备半导体ZnO层的方法
公开(公告)号：US08889476B2
公开(公告)日：2014-11-18
申请号：US13123072
申请日：2009-11-04
申请人： Heiko Thiem , Juergen Steiger , Alexey Merkulov , Duy Vu Pham , Yilmaz Aksu , Stefan Schutte , Matthias Driess
发明人： Heiko Thiem , Juergen Steiger , Alexey Merkulov , Duy Vu Pham , Yilmaz Aksu , Stefan Schutte , Matthias Driess
IPC分类号： H01L21/36 , C23C18/12
CPC分类号： C23C18/1216 , C23C16/06 , C23C18/122 , C23C18/1233 , C23C18/1245 , C23C18/1295
摘要： The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.
摘要翻译：本发明涉及包含a）至少两种不同的ZnO立方体，其中在SATP条件下至少一种ZnO立方体以固体形式存在，并且至少一种ZnO立方烷在SATP条件下以液体形式存在，以及b）至少一种溶剂，用于从这些配方生产半导体ZnO层的方法，以及用于制备电子部件的配方和电子部件本身的使用。

8. 发明申请

US20130116463A1 INDIUM OXOALKOXIDES FOR PRODUCING COATINGS CONTAINING INDIUM OXIDE 有权
标题翻译：用于生产包含氧化铝的涂料的氧化铝氧化物
公开(公告)号：US20130116463A1
公开(公告)日：2013-05-09
申请号：US13809322
申请日：2011-07-07
申请人： Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
发明人： Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
IPC分类号： C07F5/00
CPC分类号： C07F5/00 , C07F5/069 , C23C18/1216 , C23C18/1254
摘要： The present invention relates to halogenated indium oxo alkoxides of the generic formula In6O2X6(OR)6(R′CH(O)COOR″)2(HOR)x(HNR′″2)y where X═F, Cl, Br and/or I, R═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R′═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R″═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R′″═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.
摘要翻译：本发明涉及通式为In 6 O 2 X 6（OR）6（R'CH（O）COOR“）2（HOR）x（HNR”2）y的卤代铟氧代醇，其中X = F，Cl，Br 和/或I，R = C 1 -C 15 - 烷基，C 1 -C 15 - 烯基，C 1 -C 15 - 炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基，R'= C 1 C 1 -C 15烷基，C 1 -C 15 - 烯基，C 1 -C 15炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基，R“= C 1 -C 15 - 烷基， C 15 - 烯基，C 1 -C 15 - 炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基，R“= C 1 -C 15 - 烷基，C 1 -C 15 - 烯基， C 15 - 炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基 - 和/或C 7 -C 15 - 烷氧基芳基，x = 0至10和y = 0至10，其制备方法和用途。

9. 发明申请

US20130221352A1 PROCESS FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS 有权
标题翻译：生产含氧化ING层的方法
公开(公告)号：US20130221352A1
公开(公告)日：2013-08-29
申请号：US13884495
申请日：2011-10-26
申请人： Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
发明人： Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
IPC分类号： H01L21/02 , H01L29/22 , H01L29/43 , H01L21/288
CPC分类号： H01L21/02628 , C23C18/1216 , H01L21/288 , H01L29/22 , H01L29/43
摘要： The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.
摘要翻译：本发明涉及一种用于生产含氧化铟的层的液相方法，其中可以从包含至少一种氧化铟前体和至少一种溶剂和/或分散介质的混合物制备的涂料组合物以点a ）至d），a）施加到基底上，b）用电磁辐射照射施加到基底上的组合物，c）任选干燥，d）热转换成含氧化铟的层，其中氧化铟前体是通式为InX（OR）2的卤素烷氧化物，其中R是烷基和/或烷氧基烷基，X是F，Cl，Br或I，并且用具有显着部分辐射的电磁辐射进行照射 170-210nm和250-258nm的范围，与该方法可生产的含氧化铟的层及其用途。

10. 发明申请

US20130122647A1 PROCESS FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS, INDIUM OXIDE-CONTAINING LAYERS PRODUCED BY THE PROCESS AND USE THEREOF 有权
标题翻译：生产含氧化ING层的方法，由该方法生产的含氧化钇层及其用途
公开(公告)号：US20130122647A1
公开(公告)日：2013-05-16
申请号：US13516900
申请日：2010-11-25
申请人： Jürgen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
发明人： Jürgen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
IPC分类号： H01L51/00
CPC分类号： H01L51/0032 , C23C18/06 , C23C18/1216 , C23C18/125 , C23C18/14 , H01L21/02565 , H01L21/02628
摘要： The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)2 where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ≦360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.
摘要翻译：本发明涉及一种用于从非水溶液制备含氧化铟的层的液相方法，其中含有至少一种通式为InX（OR）2的卤素烷氧化物的无水组合物，其中R =烷基和/或烷氧基烷基基团和X = F，Cl，Br或I，并且至少一种溶剂或分散介质按照a）至d）的顺序，在无水气氛中，a）施加到基材上，b）施加到用360nm波长的电磁辐射照射衬底，c）任选地干燥，然后d）热转换成含氧化铟的层到可通过该方法生产的层及其用途。

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