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1. 发明申请

US20150044506A1 FLUX CORED WIRE AND MANUFACTURING METHOD THEREOF AND MANUFACTURING DEVICE THEREOF 审中-公开
标题翻译：通用线及其制造方法及其制造方法
公开(公告)号：US20150044506A1
公开(公告)日：2015-02-12
申请号：US14380739
申请日：2013-04-17
申请人： Hee Jin Kwak , Young Su Kim
发明人： Hee Jin Kwak , Young Su Kim
IPC分类号： B23K35/02 , B23K35/40
CPC分类号： B23K35/0266 , B23K35/406 , B23K2035/408 , Y10T29/49201 , Y10T29/53348 , Y10T428/12958
摘要： The present invention relates to a flux cored wire and the method and apparatus for manufacturing the same. The flux cored wire in accordance with the present invention can prevent the flux filled inside strip from leaking out and the moisture in the atmosphere from penetrating into the flux. The method of the present invention also does not require longer processing time. For this, the flux cored wire in accordance with the present invention is comprised of: an inner tubular body formed with flat strip by curling up the side edges of the strip into a tubular body having a seam and filed with flux inside; and an outer tubular body formed with flat strip by curling up the side edges of the strip into a tubular body having a seam and wrapping around the inner tubular body in tight contact.
摘要翻译：药芯焊丝技术领域本发明涉及药芯焊丝及其制造方法和装置。根据本发明的药芯焊丝可以防止填充在钢带内的焊剂泄漏，并且大气中的水分渗透到焊剂中。本发明的方法也不需要更长的处理时间。为此，根据本发明的药芯焊丝包括：通过将条带的侧边缘卷曲成具有接缝并在其内部具有焊剂的管状体而形成有扁平带的内管状体; 以及通过将条带的侧边缘卷曲成具有接缝并且紧密接触地围绕内管体缠绕的管状主体而形成有扁平带的外管状体。

2. 发明授权

US07785964B2 Non-volatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07785964B2
公开(公告)日：2010-08-31
申请号：US12078406
申请日：2008-03-31
申请人： Jin-Jun Park , Hee-Jin Kwak , Beom-Jun Jin
发明人： Jin-Jun Park , Hee-Jin Kwak , Beom-Jun Jin
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , H01L27/115 , H01L29/66825
摘要： Example embodiments relate to a non-volatile semiconductor memory device and a method of manufacturing the same. A semiconductor device includes an isolation layer protruding from a substrate, a spacer, a tunnel insulation layer, a floating gate, a dielectric layer pattern and a control gate. The spacer may be formed on a sidewall of a protruding portion of the isolation layer. The tunnel insulation layer may be formed on the substrate between adjacent isolation layers. The floating gate may be formed on the tunnel insulation layer. The floating gate contacts the spacer and has a width that gradually increases from a lower portion toward an upper portion. The dielectric layer pattern and the control gate may be sequentially formed on the floating gate.
摘要翻译：示例性实施例涉及非易失性半导体存储器件及其制造方法。半导体器件包括从衬底突出的隔离层，间隔物，隧道绝缘层，浮动栅极，电介质层图案和控制栅极。间隔件可以形成在隔离层的突出部分的侧壁上。隧道绝缘层可以形成在相邻隔离层之间的衬底上。浮栅可以形成在隧道绝缘层上。浮动栅极接触间隔件，并且具有从下部朝向上部逐渐增加的宽度。电介质层图案和控制栅极可以顺序地形成在浮动栅极上。

3. 发明授权

US08883751B2 Composition containing microRNA-21 inhibitor for enhancing radiation sensitivity 有权
标题翻译：含有microRNA-21抑制剂的组合物，用于增强辐射敏感性
公开(公告)号：US08883751B2
公开(公告)日：2014-11-11
申请号：US12599735
申请日：2008-07-30
申请人： Jong Bae Park , Seung Hoon Lee , Hee Jin Kwak , Tae Hoon Kim , Heon Yoo , Donghee Lee , Eun Kyoung Park , Hea Jin Kim
发明人： Jong Bae Park , Seung Hoon Lee , Hee Jin Kwak , Tae Hoon Kim , Heon Yoo , Donghee Lee , Eun Kyoung Park , Hea Jin Kim
IPC分类号： A61K48/00 , C07H21/02 , C07H21/04
CPC分类号： A61K41/0038 , A61K31/00 , A61K31/7105 , C12N15/113 , C12N2310/113
摘要： Disclosed is a radiation sensitivity-enhancing composition in which a microRNA-21 inhibitor acts as an active ingredient. The microRNA-21 inhibitor is an antisense nucleic acid molecule binding complementarily to microRNA-21. The composition can be administered to a patient in conjunction with irradiation. The inhibitor can act as a radiosensitizer, enhancing the therapeutic effect of such irradiation on cancer high in microRNA-21 expression level, particularly, glioma.
摘要翻译：公开了一种其中微小RNA-21抑制剂作为活性成分的辐射敏感性增强组合物。 microRNA-21抑制剂是与microRNA-21互补结合的反义核酸分子。组合物可以与照射一起施用于患者。抑制剂可以作为放射增敏剂，增强这种辐射对microRNA-21表达水平，特别是胶质瘤的癌症的治疗效果。

4. 发明申请

US20110124712A1 ANTI-CANCER COMPOSITION COMPRISING MICRORNA MOLECULES 审中-公开
标题翻译：包含微阵列分子的抗癌组合物
公开(公告)号：US20110124712A1
公开(公告)日：2011-05-26
申请号：US12599733
申请日：2008-07-25
申请人： Jong Bae Park , Seung Hoon Lee , Eun Kyoung Park , Donghee Lee , Hee-Seok Yang , Heon Yoo , Hea Jin Kim , Tae Hoon Kim , Hee Jin Kwak
发明人： Jong Bae Park , Seung Hoon Lee , Eun Kyoung Park , Donghee Lee , Hee-Seok Yang , Heon Yoo , Hea Jin Kim , Tae Hoon Kim , Hee Jin Kwak
IPC分类号： A61K31/7105 , C07H21/02 , C12N15/63 , C40B40/06 , A61P35/00 , A61P9/10 , A61P9/00 , A61P17/00 , A61P27/06 , A61P27/02 , A61P19/02 , A61P17/06 , A61P25/28
CPC分类号： A61K31/7105
摘要： Disclosed is an anticancer composition for the treatment of hypoxia-induced angiogenesis-associated diseases including cancers. It comprises a microRNA-125 nucleic acid molecule. Also, methods of inhibiting angiogenesis, suppressing the invasion and metastasis of cancer cells, and treating cancers are provided.
摘要翻译：公开了用于治疗缺氧诱导的血管生成相关疾病（包括癌症）的抗癌组合物。它包含微小RNA-125核酸分子。此外，还提供了抑制血管生成，抑制癌细胞的侵袭和转移以及治疗癌症的方法。

5. 发明申请

US20110021601A1 COMPOSITION CONTAINING MICRORNA-21 INHIBITOR FOR ENHANCING RADIATION SENSITIVITY 有权
标题翻译：含有MICRORNA-21抑制剂以提高辐射敏感性的组合物
公开(公告)号：US20110021601A1
公开(公告)日：2011-01-27
申请号：US12599735
申请日：2008-07-30
申请人： Jong Bae Park , Seung Hoon Lee , Hee Jin Kwak , Tae Hoon Kim , Heon Yoo , Donghee Lee , Eun Kyoung Park , Hea Jin Kim
发明人： Jong Bae Park , Seung Hoon Lee , Hee Jin Kwak , Tae Hoon Kim , Heon Yoo , Donghee Lee , Eun Kyoung Park , Hea Jin Kim
IPC分类号： A61K31/713 , C07H21/02 , C12N15/63 , A61P35/00
CPC分类号： A61K41/0038 , A61K31/00 , A61K31/7105 , C12N15/113 , C12N2310/113
摘要： Disclosed is a radiation sensitivity-enhancing composition in which a microRNA-21 inhibitor acts as an active ingredient. The microRNA-21 inhibitor is an antisense nucleic acid molecule binding complementarily to microRNA-21. The composition can be administered to a patient in conjunction with irradiation. The inhibitor can act as a radiosensitizer, enhancing the therapeutic effect of such irradiation on cancer high in microRNA-21 expression level, particularly, glioma.
摘要翻译：公开了一种其中微小RNA-21抑制剂作为活性成分的辐射敏感性增强组合物。 microRNA-21抑制剂是与microRNA-21互补结合的反义核酸分子。组合物可以与照射一起施用于患者。抑制剂可以作为放射增敏剂，增强这种辐射对microRNA-21表达水平，特别是胶质瘤的癌症的治疗效果。

6. 发明授权

US10124444B2 Flux cored wire and manufacturing method thereof and manufacturing device thereof 有权
公开(公告)号：US10124444B2
公开(公告)日：2018-11-13
申请号：US14380739
申请日：2013-04-17
申请人： Hee Jin Kwak , Young Su Kim
发明人： Hee Jin Kwak , Young Su Kim
IPC分类号： B23K35/02 , B23K35/40
摘要： The present invention relates to a flux cored wire and the method and apparatus for manufacturing the same. The flux cored wire in accordance with the present invention can prevent the flux filled inside strip from leaking out and the moisture in the atmosphere from penetrating into the flux. The method of the present invention also does not require longer processing time. For this, the flux cored wire in accordance with the present invention is comprised of: an inner tubular body formed with flat strip by curling up the side edges of the strip into a tubular body having a seam and filed with flux inside; and an outer tubular body formed with flat strip by curling up the side edges of the strip into a tubular body having a seam and wrapping around the inner tubular body in tight contact.

7. 发明申请

US20090008699A1 Non-volatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20090008699A1
公开(公告)日：2009-01-08
申请号：US12078406
申请日：2008-03-31
申请人： Jin-Jun Park , Hee-Jin Kwak , Beom-Jun Jin
发明人： Jin-Jun Park , Hee-Jin Kwak , Beom-Jun Jin
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L21/28273 , H01L27/115 , H01L29/66825
摘要： Example embodiments relate to a non-volatile semiconductor memory device and a method of manufacturing the same. A semiconductor device includes an isolation layer protruding from a substrate, a spacer, a tunnel insulation layer, a floating gate, a dielectric layer pattern and a control gate. The spacer may be formed on a sidewall of a protruding portion of the isolation layer. The tunnel insulation layer may be formed on the substrate between adjacent isolation layers. The floating gate may be formed on the tunnel insulation layer. The floating gate contacts the spacer and has a width that gradually increases from a lower portion toward an upper portion. The dielectric layer pattern and the control gate may be sequentially formed on the floating gate.
摘要翻译：示例性实施例涉及非易失性半导体存储器件及其制造方法。半导体器件包括从衬底突出的隔离层，间隔物，隧道绝缘层，浮动栅极，电介质层图案和控制栅极。间隔件可以形成在隔离层的突出部分的侧壁上。隧道绝缘层可以形成在相邻隔离层之间的衬底上。浮栅可以形成在隧道绝缘层上。浮动栅极接触间隔件，并且具有从下部朝向上部逐渐增加的宽度。电介质层图案和控制栅极可以顺序地形成在浮动栅极上。

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