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1. 发明授权

US4327119A Method to synthesize and produce thin films by spray pyrolysis 失效
标题翻译：通过喷雾热解合成和生产薄膜的方法
公开(公告)号：US4327119A
公开(公告)日：1982-04-27
申请号：US231127
申请日：1981-02-03
申请人： Steven A. Lis , Harvey B. Serreze , Peter M. Sienkiewicz
发明人： Steven A. Lis , Harvey B. Serreze , Peter M. Sienkiewicz
IPC分类号： B01J19/00 , C23C18/12 , H01L21/208 , H01L31/18 , B05D1/02 , B05D1/38
CPC分类号： H01L31/1844 , C23C18/08 , C23C18/1204 , C23C18/1655 , C23C18/1678 , C23C18/52 , H01L31/18 , H01L31/1828 , H01L31/1832 , H01L31/184 , Y02E10/543 , Y02E10/544
摘要： Forming a film by spraying onto a heated substrate an atomized solution containing the appropriate salt of a constituent element of the film and an agent in sufficient amount to change the oxidation state of at least one solute element of the spray solution after contacting the heated substrate.
摘要翻译：通过在加热的基底上喷涂含有膜的构成元素的适当盐的雾化溶液和足够量的试剂以在与加热的基底接触之后改变喷雾溶液的至少一种溶质元素的氧化态而形成膜。

2. 发明授权

US08052291B2 Solar simulator filter 有权
标题翻译：太阳能模拟器过滤器
公开(公告)号：US08052291B2
公开(公告)日：2011-11-08
申请号：US12378614
申请日：2009-02-18
申请人： Harvey B. Serreze
发明人： Harvey B. Serreze
IPC分类号： F21V9/02
CPC分类号： F21V9/02 , F21S8/006 , G02B5/208
摘要： A solar simulator filter includes filter material configured to achieve class A performance for the spectral output of the optical source except between about 900 and 1,100 nm. Openings in the filter material increase the average effective transmittance between about 900 and 1,100 nm to achieve class A performance for the spectral output of the source.
摘要翻译：太阳能模拟器滤波器包括被配置为实现除了在约900和1100nm之间的光源的光谱输出的A类性能的滤波器材料。过滤材料中的开口增加了约900和1100nm之间的平均有效透射率，以实现源的光谱输出的A级性能。

3. 发明授权

US5319660A Multi-quantum barrier laser 失效
标题翻译：多量子势垒激光器
公开(公告)号：US5319660A
公开(公告)日：1994-06-07
申请号：US890167
申请日：1992-05-29
申请人： Ying C. Chen , Harvey B. Serreze
发明人： Ying C. Chen , Harvey B. Serreze
IPC分类号： H01S5/20 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/2013 , H01S5/3409 , H01S5/34326
摘要： A semiconductor laser device which provides enhanced carrier confinement. This device utilizes a single or multi-quantum well structure located between graded index confinement layers which are in turn between a pair of cladding layers. Semiconductor layers are selected such that the quantum well active region and confinement layers form a PN junction by being located between layers having N-type dopants on one side and P-type dopants on the second side for proper diode response. Within each confinement layer there is formed a plurality of multi-quantum barrier layers which serve to further increase the carrier confinement within the quantum well region by increasing the effective potential barrier within the graded index confinement region. The multi-quantum barrier layers are comprised of layers of the material forming the graded index confinement layers having alternating large and small concentrations of the material whose percentage is being varied in the graded index confinement layers.
摘要翻译：一种提供增强载体限制的半导体激光器件。该装置利用位于渐变折射率限制层之间的单个或多量子阱结构，这些层又在一对包覆层之间。选择半导体层，使得量子阱有源区和限制层通过位于一侧具有N型掺杂剂的层和位于第二侧上的P型掺杂剂以形成适合二极管响应的PN结。在每个限制层内，形成多个多量子势垒层，其用于通过增加分级指数限制区域内的有效势垒来进一步增加量子阱区域内的载流子限制。多量子势垒层由形成渐变折射率限制层的材料层组成，其具有交替的大和小浓度的材料，其百分比在渐变折射率限制层中变化。

4. 发明授权

US09250122B2 Solar simulator 有权
公开(公告)号：US09250122B2
公开(公告)日：2016-02-02
申请号：US13373176
申请日：2011-11-07
申请人： Harvey B. Serreze
发明人： Harvey B. Serreze
IPC分类号： F21V7/00 , G01J1/08 , F21V13/08 , F21S8/00 , F21V9/04 , F21V19/00 , F21Y103/00
CPC分类号： G01J1/08 , F21S8/006 , F21V7/005 , F21V9/04 , F21V13/08 , F21V19/008 , F21Y2103/00 , Y10T29/49826
摘要： A compact solar simulator includes a target surface for a solar module, an enclosure behind the target surface, and at least one source fixture including a lamp in the enclosure spaced from the target surface. Diffusing surfaces about the source fixture diffuse radiation emitted by the lamp. Specular reflectors are positioned to steer the diffused radiation to the target surface and are oriented to create a uniform intensity distribution across the target surface. Moreover, the surface area of any desired filters is reduced and any longitudinal non-uniform intensity distribution of the lamp is corrected.

5. 发明授权

US5218613A Visible diode laser 失效
标题翻译：可见二极管激光器
公开(公告)号：US5218613A
公开(公告)日：1993-06-08
申请号：US877152
申请日：1992-05-01
申请人： Harvey B. Serreze
发明人： Harvey B. Serreze
IPC分类号： H01S5/343
CPC分类号： B82Y20/00 , H01S5/34326
摘要： A semiconductor laser device comprised of GaInP/AlGaInP materials which efficiently produces visible light output with improved carrier confinement and decreased threshold current density levels. The laser diode uses a strained quantum well positioned between a pair of graded index confinement layers which are in turn positioned between a pair of cladding layers. The active region is preferably comprised of Ga.sub.y In.sub.1-y P and the confinement layers are graded index layers comprised of (Al.sub.x Ga.sub.1-x).sub.0.51 In.sub.0.49 P in which the value of x is linearly graded from 0.40 to a maximum value selected from the range of 0.8 to 1.0 in a direction away from the active region. The cladding layers are comprised of (Al.sub.x Ga.sub.1-x).sub.0.51 In.sub.0.49 P in which the value of x is selected from the range 0.8 to 1.0. Bounding layers may be interdisposed between active region and the confinement layer on either side of the active region. The bounding layers are thin layers comprised of (Al.sub.x Ga.sub.1-x).sub.0.51 In.sub.0.49 P in which the value of x is in the range of 0.2-0.3 in the preferred embodiment.
摘要翻译：一种由GaInP / AlGaInP材料组成的半导体激光器件，其有效地产生具有改进的载流子限制和降低的阈值电流密度水平的可见光输出。激光二极管使用位于一对渐变指数限制层之间的应变量子阱，该限制层又位于一对包覆层之间。有源区优选由GayIn1-yP组成，并且约束层是由（Al x Ga 1-x）0.51 In 0.49 P组成的渐变折射率层，其中x的值从0.40线性分级到从0.8的范围中选择的最大值在远离有源区域的方向为1.0。包层由（Al x Ga 1-x）0.51 In 0.49 P组成，其中x的值选自0.8至1.0。边界层可以在有源区域和有源区域的任一侧上的约束层之间插入。边界层是在优选实施例中由（Al x Ga 1-x）0.51 In 0.49 P组成的薄层，其中x的值在0.2-0.3的范围内。

6. 发明申请

US20130114237A1 Solar simulator 有权
标题翻译：太阳能模拟器
公开(公告)号：US20130114237A1
公开(公告)日：2013-05-09
申请号：US13373176
申请日：2011-11-07
申请人： Harvey B. Serreze
发明人： Harvey B. Serreze
IPC分类号： F21V13/08 , B23P11/00 , F21V7/00
CPC分类号： G01J1/08 , F21S8/006 , F21V7/005 , F21V9/04 , F21V13/08 , F21V19/008 , F21Y2103/00 , Y10T29/49826
摘要： A compact solar simulator includes a target surface for a solar module, an enclosure behind the target surface, and at least one source fixture including a lamp in the enclosure spaced from the target surface. Diffusing surfaces about the source fixture diffuse radiation emitted by the lamp. Specular reflectors are positioned to steer the diffused radiation to the target surface and are oriented to create a uniform intensity distribution across the target surface. Moreover, the surface area of any desired filters is reduced and any longitudinal non-uniform intensity distribution of the lamp is corrected.
摘要翻译：紧凑的太阳模拟器包括用于太阳能模块的目标表面，目标表面后面的封闭体，以及至少一个源夹具，其包括与目标表面间隔开的外壳中的灯。围绕源夹具的扩散表面漫射由灯发出的辐射。镜面反射器被定位成将扩散的辐射转向目标表面并被定向以在目标表面上产生均匀的强度分布。此外，任何期望的滤光器的表面积减小，并且校正灯的任何纵向不均匀的强度分布。

7. 发明申请

US20100208448A1 Solar simulator filter 有权
标题翻译：太阳能模拟器过滤器
公开(公告)号：US20100208448A1
公开(公告)日：2010-08-19
申请号：US12378614
申请日：2009-02-18
申请人： Harvey B. Serreze
发明人： Harvey B. Serreze
IPC分类号： F21V9/02 , G02B5/20
CPC分类号： F21V9/02 , F21S8/006 , G02B5/208
摘要： A solar simulator filter includes filter material configured to achieve class A performance for the spectral output of the optical source except between about 900 and 1,100 nm. Openings in the filter material increase the average effective transmittance between about 900 and 1,100 nm to achieve class A performance for the spectral output of the source.
摘要翻译：太阳能模拟器滤波器包括被配置为实现除了在约900和1100nm之间的光源的光谱输出的A类性能的滤波器材料。过滤材料中的开口增加了约900和1100nm之间的平均有效透射率，以实现源的光谱输出的A级性能。

8. 发明授权

US5247349A Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure 失效
标题翻译：具有层状结构的III-V器件的钝化和绝缘，特别是具有层状结构的非晶态聚合物
公开(公告)号：US5247349A
公开(公告)日：1993-09-21
申请号：US571033
申请日：1990-08-22
申请人： Diego J. Olego , John A. Baumann , Rozalie Schachter , Harvey B. Serreze , William E. Spicer , Paul M. Raccah
发明人： Diego J. Olego , John A. Baumann , Rozalie Schachter , Harvey B. Serreze , William E. Spicer , Paul M. Raccah
IPC分类号： C03C17/22 , H01L21/314 , H01L21/3205 , H01L23/29 , H01L23/31 , H01L29/24 , H01L29/51 , H01L31/032 , H01L51/05
CPC分类号： H01L23/3171 , C03C17/22 , H01L21/314 , H01L21/32051 , H01L23/291 , H01L29/24 , H01L29/51 , H01L31/032 , H01L2924/0002 , H01L2924/13063 , H01L51/0508 , H01L51/0512
摘要： Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the , and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metal-semiconductor (Schottky) devices for example to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices such as light emitting diodes, lasers, solar cells, photo cathodes and photo detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.
摘要翻译：在III-V族半导体，特别是InP，GaP和GaAs上生长的Pnictide薄膜，特别是磷是非晶态的，并且具有新颖的层状褶皱片状局部顺序。薄膜通常为400埃厚，优选通过分子束沉积生长，尽管可以使用诸如真空蒸发，溅射，化学气相沉积和来自液体熔融的沉积等其它工艺。这些层在<100> 110>和III-V晶体的表面上生长。第一层降低表面状态的密度，并且允许耗尽层被调制，表面阻挡减小，表面的电子浓度增加，并且表面复合速度降低，并且光致发光强度增加。这些层可以用于MIS和金属半导体（肖特基）器件中，例如绝缘和钝化MISFET，钝化MESFETS，以减少PIN和雪崩二极管中的反向偏置暗电流的表面电流分量，并且提高光电子器件如发光二极管，激光器，太阳能电池，光电阴极和光电探测器。可以将pnictide层应用于具有pnictide成分的金属间化合物和化合物半导体。磷化氢可以是磷，砷，锑或铋，或它们的组合。

9. 发明授权

US5222090A 700-850 nanometer semiconductor diode laser 失效
标题翻译： 700-850纳米半导体二极管激光器
公开(公告)号：US5222090A
公开(公告)日：1993-06-22
申请号：US846136
申请日：1992-03-05
申请人： Harvey B. Serreze
发明人： Harvey B. Serreze
IPC分类号： H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/343 , H01S5/3211 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： Disclosed herein is a semiconductor laser device comprised of a semiconductor substrate having deposited thereon at least one quantum well active region comprised of an alloy of the group consisting of GaInAsP and AlGaInAs sandwiched between upper and lower confinement layers of AlGaInAsP alloy. The laser device is further comprised of AlGaInP cladding layers.
摘要翻译：本发明公开了一种半导体激光器件，其中半导体衬底具有沉积在其上的至少一个量子阱有源区域，该区域由夹在AlGaInAsP合金的上限和下限约束层之间的GaInAsP和AlGaInAs组成的组合构成。激光器件还包括AlGaInP包覆层。

10. 发明授权

US4696828A Passivation of InP by plasma deposited phosphorus 失效
标题翻译：通过等离子体沉积磷钝化InP
公开(公告)号：US4696828A
公开(公告)日：1987-09-29
申请号：US736750
申请日：1985-05-21
申请人： Rozalie Schachter , Marcello Viscogliosi , Lewis A. Bunz , Diego J. Olego , Harvey B. Serreze , Paul M. Raccah
发明人： Rozalie Schachter , Marcello Viscogliosi , Lewis A. Bunz , Diego J. Olego , Harvey B. Serreze , Paul M. Raccah
IPC分类号： H01L21/306 , H01L21/314 , H01L23/29 , H01L23/31 , H01L31/0216 , H01L31/18 , H01L33/00 , H01L33/44 , H01L51/05 , B05D3/06
CPC分类号： H01L33/44 , H01L21/02052 , H01L21/30621 , H01L21/314 , H01L23/291 , H01L23/3171 , H01L31/02161 , H01L31/18 , H01L33/0062 , H01L2924/0002 , H01L2924/13063 , H01L51/0508 , H01L51/0512 , Y10S438/958
摘要： Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the , and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metalsemiconductor (Schottky) devices for example to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices such as light emitting diodes, lasers, solar cells, photo cathodes and photo detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.
摘要翻译：在III-V族半导体，特别是InP，GaP和GaAs上生长的Pnictide薄膜，特别是磷是非晶态的，并且具有新颖的层状褶皱片状局部顺序。薄膜通常为400埃厚，优选通过分子束沉积生长，尽管可以使用诸如真空蒸发，溅射，化学气相沉积和来自液体熔融的沉积等其它工艺。这些层在III-V晶体的<100> <110>和<111>表面上生长。第一层降低表面状态的密度，并且允许耗尽层被调制，表面阻挡减小，表面的电子浓度增加，并且表面复合速度降低，并且光致发光强度增加。这些层可以用于MIS和金属半导体（肖特基）器件中，例如绝缘和钝化MISFET，钝化MESFETS，以减少PIN和雪崩二极管中的反向偏置暗电流的表面电流分量，并且提高光电二极管的性能，诸如发光二极管，激光器，太阳能电池，光电阴极和光电检测器的电子器件。可以将pnictide层应用于具有pnictide成分的金属间化合物和化合物半导体。磷化氢可以是磷，砷，锑或铋，或它们的组合。

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