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1. 发明申请

US20110165057A1 PLASMA CVD DEVICE, DLC FILM, AND METHOD FOR DEPOSITING THIN FILM 审中-公开
标题翻译：等离子体CVD装置，DLC膜和沉积薄膜的方法
公开(公告)号：US20110165057A1
公开(公告)日：2011-07-07
申请号：US13001089
申请日：2009-06-30
申请人： Yuuji Honda , Takeharu Kawabe , Haruhito Hayakawa , Koji Abe
发明人： Yuuji Honda , Takeharu Kawabe , Haruhito Hayakawa , Koji Abe
IPC分类号： C01B31/06 , C23C16/24 , C23C16/26 , C23C16/455 , C23C16/458 , C23C16/50
CPC分类号： C23C16/509 , H01J37/32091 , H01J37/32541 , H01J37/32706
摘要： To provide a plasma CVD device capable of increasing voltage VDC that is a DC component generated at the electrode during high-frequency discharge in CVD deposition. The plasma CVD device according to the present invention includes a chamber 1, a holding electrode 2 disposed in the interior of the chamber and adapted for holding a substrate on which a film is to be deposited, a high frequency power supply 8 connected electrically with the holding electrode, a counter electrode 12 disposed opposite to the substrate on which a film is to be deposited held by the holding electrode and connected with an earth power supply or a float power supply, a raw material gas supply mechanism for supplying a raw material gas into a space 13 between the counter electrode and the holding electrode, and an evacuation mechanism for evacuating the interior of the chamber, wherein the surface area “a” of the holding electrode and the surface area “b” of the counter electrode satisfy a formula below, b/a≧2.
摘要翻译：提供一种等离子体CVD装置，其能够增加在CVD沉积期间的高频放电期间在电极处产生的DC分量的电压VDC。根据本发明的等离子体CVD装置包括室1，保持电极2，其设置在室的内部，并适于保持其上要沉积膜的基板;高频电源8，其与保持电极，与由保持电极保持的薄膜所在的基板相对设置并与接地电源或浮动电源连接的对置电极12，用于供给原料气体的原料气体供给机构进入对置电极和保持电极之间的空间13以及用于抽空室内部的抽空机构，其中保持电极的表面积“a”和对置电极的表面积“b”满足公式以下，b /a≥2。

2. 发明授权

US09524742B2 CXNYHZ film, deposition method, magnetic recording medium and method for manufacturing the same 有权
标题翻译： CXNYHZ膜，沉积法，磁记录介质及其制造方法
公开(公告)号：US09524742B2
公开(公告)日：2016-12-20
申请号：US14351661
申请日：2011-10-24
申请人： Haruhito Hayakawa , Kouji Abe , Keiichi Terashima , Yuuji Honda
发明人： Haruhito Hayakawa , Kouji Abe , Keiichi Terashima , Yuuji Honda
IPC分类号： G11B5/66 , G11B5/72 , G11B5/84 , C23C16/02 , C23C16/34 , C23C16/56 , G11B5/725
CPC分类号： G11B5/722 , C23C16/0272 , C23C16/347 , C23C16/56 , G11B5/72 , G11B5/725 , G11B5/8408
摘要： To provide a CxNyHz film of high density and a deposition method. One aspect of the present invention is a CxNyHz film formed on a substrate to be deposited, wherein x, y and z satisfy formulae (1) to (4) below: 0.4

3. 发明申请

US20140349140A1 CXNYHZ FILM, DEPOSITION METHOD, MAGNETIC RECORDING MEDIUM AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： CXNYHZ膜，沉积方法，磁记录介质及其制造方法
公开(公告)号：US20140349140A1
公开(公告)日：2014-11-27
申请号：US14351661
申请日：2011-10-24
申请人： Haruhito Hayakawa , Kouji Abe , Keiichi Terashima , Yuuji Honda
发明人： Haruhito Hayakawa , Kouji Abe , Keiichi Terashima , Yuuji Honda
IPC分类号： G11B5/72 , G11B5/725
CPC分类号： G11B5/722 , C23C16/0272 , C23C16/347 , C23C16/56 , G11B5/72 , G11B5/725 , G11B5/8408
摘要： To provide a CxNyHz film of high density and a deposition method. One aspect of the present invention is a CxNyHz film formed on a substrate to be deposited, wherein x, y and z satisfy formulae (1) to (4) below: 0.4
摘要翻译：提供高密度的CxNyHz膜和沉积方法。本发明的一个方面是在待沉积的基底上形成的CxNyHZ膜，其中x，y和z满足下式（1）至（4）：0.4

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