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1. 发明授权

US4692203A Process for making beta-zinc diphosphide monocrystals (whiskers) 失效
标题翻译：制备β-Zn二磷化物单晶（晶须）的方法
公开(公告)号：US4692203A
公开(公告)日：1987-09-08
申请号：US899941
申请日：1986-08-25
申请人： Thomas Betz , Hans-Georg von Schnering , Erich Schonherr
发明人： Thomas Betz , Hans-Georg von Schnering , Erich Schonherr
IPC分类号： C01B25/08 , C30B23/00 , C30B29/10
CPC分类号： C30B23/00 , C30B29/10
摘要： .beta.-zinc diphosphide monocrystals (.beta.-ZnP.sub.2) (whiskers) having a diameter of at least 7 mm are made. To this end, a quartz ampoule is filled up to 70-90% its volume with polycrystalline .beta.-ZnP.sub.2 ; the ampoule is sealed and drawn in upright position at a velocity of 0.5-2.5 mm/day during a period of 24-120 days through a kiln; the temperature outline from below to above in the kiln is defined by a lower inlet temperature of 580.degree.-780.degree. C., a mean maximum temperature of 800.degree.-950.degree. C. and an upper outlet temperature of 350.degree.-400.degree. C.; the ampoule coming from the furnace is crushed and .beta.-ZnP.sub.2 condensed into a monocrystal via the gas phase by sublimation into the upper ampoule portion is removed.
摘要翻译：制成直径至少为7毫米的β-二氧化锌单晶（β-ZnP2）（晶须）。为此，用多晶β-ZnP2将石英安瓿填充至其体积的70-90％; 通过窑将安瓿密封并以直径为0.5-2.5mm /日的速度在24-120天的时间内被拉伸; 窑内温度范围从下至上由580℃-780℃的较低的入口温度定义，平均最高温度为800-950℃，上出口温度为350-400℃ 。将来自炉的安瓿压碎，并且通过气相通过升华将β-ZnP2冷凝成单晶通过升华进入上部安瓿部分。

2. 发明授权

US4419151A Crystal and germanium modification and process for its preparation 失效
标题翻译：水晶和锗的改性及其制备方法
公开(公告)号：US4419151A
公开(公告)日：1983-12-06
申请号：US354476
申请日：1982-03-03
申请人： Andreas Gruttner , Reinhard Nesper , Hans-Georg von Schnering
发明人： Andreas Gruttner , Reinhard Nesper , Hans-Georg von Schnering
IPC分类号： C30B29/08 , C22B41/00 , C22C1/00 , C22C28/00
CPC分类号： C22B41/00 , Y10S420/903
摘要： A new crystalline modification of germanium is described, as well as a method of manufacturing it. This new crystalline germanium modification has an orthorhombic structure and graphite-like properties.
摘要翻译：描述了锗的新的结晶改性，以及其制造方法。这种新的晶体锗改性具有斜方晶结构和石墨状特性。

3. 发明授权

US5703021A Process for making high temperature Bi-Sr-Ca-Cu oxide superconductor 失效
标题翻译：制备高温Bi-Sr-Ca-Cu氧化物超导体的方法
公开(公告)号：US5703021A
公开(公告)日：1997-12-30
申请号：US475078
申请日：1995-06-07
申请人： Hans-Georg von Schnering , Winfried Becker , Martin Schwarz , Bernhard Hettich , Martin Hartweg , Leonhard Walz , Thomas Popp
发明人： Hans-Georg von Schnering , Winfried Becker , Martin Schwarz , Bernhard Hettich , Martin Hartweg , Leonhard Walz , Thomas Popp
IPC分类号： C01G1/00 , C01G29/00 , C04B35/00 , C04B35/45 , C04B35/653 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24 , C04B35/626 , C04B35/64
CPC分类号： H01L39/126 , C04B35/4521 , C04B35/653 , H01L39/2419 , Y10S505/737 , Y10S505/742 , Y10S505/782
摘要： A description is given of superconducting substances having a content of Bi, Sr, Ca and Cu, and of processes for their preparation from the metal oxides within a range which is specified by the overall composition Bi.sub.a (Sr,Ca).sub.b -Cu.sub.6 O.sub.x, where a=3-24 and b=3.23-24, with an Sr/Ca atomic ratio of 1:9-9:1 and a Bi:(Ca+Sr) atomic ratio of 0.3-1.5. The transition temperature is at least 60 K. The principal phase crystallizes in the orthorhombic system. The pure compounds Bi.sub.4 (Sr,Ca).sub.4 Cu.sub.2 O.apprxeq..sub.12 and Bi.sub.4 (Sr,Ca).sub.6 Cu.sub.4 O.apprxeq..sub.20.
摘要翻译：对具有Bi，Sr，Ca和Cu含量的超导物质及其由金属氧化物制备的方法进行说明，其范围由总体组成Bia（Sr，Ca）b-Cu6Ox规定，其中 a = 3-24和b = 3.23-24，Sr / Ca原子比为1:9-9:1，Bi：（Ca + Sr）原子比为0.3-1.5。转变温度至少为60K。主相在正交系中结晶。纯化合物Bi4（Sr，Ca）4Cu2O APPROX12和Bi4（Sr，Ca）6Cu4O APPROX 20。

4. 发明授权

US4990488A Superconductors Bi-Sr-Cu-O 失效
标题翻译：超导体Bi-Sr-Cu-O
公开(公告)号：US4990488A
公开(公告)日：1991-02-05
申请号：US275779
申请日：1988-11-23
申请人： Hans-Georg von Schnering , Winfried Becker , Martin Schwarz , Leonhard Walz , Elfi Waldschmidt , Joachim Adam
发明人： Hans-Georg von Schnering , Winfried Becker , Martin Schwarz , Leonhard Walz , Elfi Waldschmidt , Joachim Adam
IPC分类号： C01G29/00 , C01G1/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01L39/12 , H01L39/24
CPC分类号： H01L39/2419 , C04B35/4521 , H01L39/126 , Y10S505/782
摘要： Black crystal compositions having the empirical composition Bi.sub.a Sr.sub.b Cu.sub.c O.sub.d are described where a+b+c=1, A=0.36-0.557, b=0.098-0.496, c=0.1-0.4 and d=approximately 1+a/2. These compositions have a superconducting transition temperature T.sub.c for superconductivity of greater than 20 K and contain a principal phase which crystallizes in the orthorhombic system. They can be prepared from the mixture of the oxides in the atomic ratio stated by heating to 700.degree.-1000.degree. C.
摘要翻译：其中a + b + c = 1，A = 0.36-0.557，b = 0.098-0.496，c = 0.1-0.4，d =约1 + a / 2，描述具有经验组成BiaSrbCucOd的黑色晶体组合物。这些组合物具有大于20K的超导转变温度Tc，并且包含在正交系中结晶的主相。它们可以通过加热至700°-1000℃的原子比由氧化物的混合物制备。

5. 发明授权

US4908241A Process for the currentless deposition of electropositive metal layers on the surfaces of less electropositive metals 失效
标题翻译：在正电性较小的金属表面上无电沉积正电性金属层的方法
公开(公告)号：US4908241A
公开(公告)日：1990-03-13
申请号：US222386
申请日：1988-07-21
申请人： Helmut Quast , Johannes Raber , Walter Ott , Hans-Georg von Schnering , Karl Peters
发明人： Helmut Quast , Johannes Raber , Walter Ott , Hans-Georg von Schnering , Karl Peters
IPC分类号： C23C18/38 , C23C18/40 , C23C18/42 , C23C18/44
CPC分类号： C23C18/42 , C23C18/38
摘要： The present invention provides a process for the currentless deposition oflectropositive metal layers on to appropriate less electropositive metals by contacting an object to be coated with a coating bath, wherein a coating bath is used which contains a metal complex obtained by reacting a monovalent electropositive metal halide with a base, which is capable of complex formation with the electropositive metal, and a hydrohalic acid.The present invention also provides a coating bath for the currentless deposition of electropositive metal layers on to less electropositive metals, wherein said bath contains an electropositive metal complex obtained by reacting a monovalent electropositive metal halide with a base which is capable of complex formation with the electropositive metal and a hydrohalic acid.Furthermore, the present invention provides an electropositive metal complex, obtainable by the reaction of a monovalent electropositive metal halide with a base which is capable of complex formation with the electropositive metal and a hydrohalic acid, followed by precipitation from the reaction mixture.
摘要翻译：本发明提供了一种通过使待涂覆物体与涂层浴接触而使正电性金属层无电沉积到适当的少正电性金属的方法，其中使用包含通过使单价正电性金属具有能与正电性金属复合形成的碱的卤化物和氢卤酸。本发明还提供了一种用于将正电性金属层无电沉积至较少正电性金属的涂层浴，其中所述浴含有通过使正电性金属卤化物与能够与正电性复合形成的碱反应获得的正电性金属络合物金属和氢卤酸。此外，本发明提供一种正电性金属络合物，其可以通过使一价正电性金属卤化物与能与正电性金属和氢卤酸形成复合物的碱反应，然后从反应混合物中沉淀而得到。

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