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1. 发明授权

US09293591B2 Tunnel field effect transistor (TFET) with lateral oxidation 有权
标题翻译：隧道场效应晶体管（TFET）具有侧向氧化
公开(公告)号：US09293591B2
公开(公告)日：2016-03-22
申请号：US13274001
申请日：2011-10-14
申请人： Jack C. Lee , Han Zhao
发明人： Jack C. Lee , Han Zhao
IPC分类号： H01L29/49 , H01L29/786 , H01L29/06 , H01L29/08
CPC分类号： H01L29/66977 , H01L29/0653 , H01L29/0895 , H01L29/66742 , H01L29/78609 , H01L29/78618 , H01L29/78642 , H01L29/78681 , H01L29/78696
摘要： A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide region operates to reduce a tunneling effect in a tunnel region underlying a drain region, during an OFF-state of the TFET. The reduction in tunneling effect results in a reduction or elimination of a flow of OFF-state leakage current between the source region and the drain region. The TFET may have components made from group III-V compound materials.
摘要翻译：垂直模式隧道场效应晶体管（TFET）具有可相对于源极区域横向定位的氧化物区域。在TFET的截止状态期间，氧化物区域用于减小漏极区域下方的隧道区域中的隧道效应。隧道效应的降低导致源极区域和漏极区域之间的截止状态漏电流的流动的减少或消除。 TFET可以具有由III-V族复合材料制成的部件。

2. 发明授权

US06485630B1 Method of reducing wear in lubricated metal cutting operation 失效
标题翻译：减少润滑金属切削作业磨损的方法
公开(公告)号：US06485630B1
公开(公告)日：2002-11-26
申请号：US09630470
申请日：2000-08-02
申请人： Arup Kumar Gangopadhyay , Gary C. Barber , Han Zhao
发明人： Arup Kumar Gangopadhyay , Gary C. Barber , Han Zhao
IPC分类号： B23H300
CPC分类号： B23Q11/1007 , C25D9/00
摘要： A method of reducing cutting tool wear in a lubricated metal cutting operation has been developed. An electrical cutting cell is provided having an anodic conductive cutting tool and a cathodic conductive work-piece connected to a DC current supply; the lubricant contains platable wear reducing agents. The lubricant is located to bathe the contacting interface between the cutting tool and work-piece to constitute an electrolyte. Next, the electrical current flow through the contacting interface is controlled to be in the range of 25-500 milli-amps. Lastly, the cutting tool is moved into and along cutting contact with the work-piece while current flows there-between to electro-chemically deposit the wear reducing agents on at least the contacting interface to reduce cutting tool wear and improve ease of mass removal.
摘要翻译：已经开发了在润滑金属切割操作中减少切削刀具磨损的方法。提供一种电切割单元，其具有连接到直流电源的阳极导电切割工具和阴极导电工件; 润滑剂含有可镀敷的磨损剂。润滑剂被定位成洗涤切割工具和工件之间的接触界面以构成电解质。接下来，通过接触界面的电流被控制在25-500毫安的范围内。最后，切割工具移动并沿着与工件的切割接触，同时电流流动到其上，以在至少接触界面上电化学沉积磨损减少剂，以减少切削刀具磨损并提高质量去除的容易性。

3. 发明申请

US20120309642A1 SNP MARKERS ASSOCIATED WITH POLYCYSTIC OVARY SYNDROME 有权
标题翻译：与多形性卵巢综合征相关的SNP标记
公开(公告)号：US20120309642A1
公开(公告)日：2012-12-06
申请号：US13525774
申请日：2012-06-18
申请人： Zi-Jiang CHEN , Han Zhao , Lin He , Yongyong Shi , Jinlong Ma , Yueran Zhao , Ling Geng , Li You
发明人： Zi-Jiang CHEN , Han Zhao , Lin He , Yongyong Shi , Jinlong Ma , Yueran Zhao , Ling Geng , Li You
IPC分类号： C40B30/04 , C12Q1/68
CPC分类号： C12Q1/6886 , C12Q1/6883 , C12Q2600/156 , C12Q2600/172
摘要： The present invention discloses SNP markers associated with PCOS and provides probes, chips, primers, kits and methods for detecting the SNP markers. Furthermore, the present invention relates to the use of SNPs in predicting or diagnosing the risk of PCOS.
摘要翻译：本发明公开了与PCOS相关的SNP标记，并提供用于检测SNP标记的探针，芯片，引物，试剂盒和方法。此外，本发明涉及使用SNP来预测或诊断PCOS的风险。

4. 发明申请

US20150345766A1 ELECTRIC CONNECTING MEMBER AND LED LAMP USING THE SAME 有权
标题翻译：电连接器和使用其的LED灯
公开(公告)号：US20150345766A1
公开(公告)日：2015-12-03
申请号：US14653945
申请日：2013-12-16
申请人： Linhua WANG , Xiaolei ZHU , Lin ZHOU , Han ZHAO
发明人： Linhua Wang , Xiaolei Zhu , Lin Zhou , Han Zhao
IPC分类号： F21V23/06 , H01R33/22 , H01R33/18 , F21K99/00 , F21V23/00
CPC分类号： F21V23/06 , F21K9/23 , F21K9/232 , F21K9/238 , F21V23/00 , F21V23/006 , F21Y2115/10 , H01R33/18 , H01R33/225 , H05K3/308 , H05K3/366 , H05K2201/10106 , H05K2201/10189 , H05K2201/10318 , H05K2201/10333 , H05K2201/10393 , H05K2201/1059 , H05K2201/10878
摘要： An electric connecting member and an LED lamp using the electric connecting member are provided. The electric connecting member is used for the electric connection between a light source substrate and a driving board of the LED lamp, and comprises an input terminal and an output terminal. The LED lamp comprises the driving board and the light source substrate. The output terminal is provided on the driving board of the LED lamp. The input terminal is disposed upon the light source substrate and is electrically connected to the light source substrate. The output terminal comprises two contacts, and one end of each of the two contacts is electrically connected to the driving board respectively. The input terminal comprises two connection heads which are respectively provided corresponding to the two contacts. One end of each of the two connection heads is electrically connected to the light source substrate respectively.
摘要翻译：提供使用电连接构件的电连接构件和LED灯。电连接构件用于光源基板和LED灯的驱动板之间的电连接，并且包括输入端子和输出端子。 LED灯包括驱动板和光源基板。输出端子设置在LED灯的驱动板上。输入端子设置在光源基板上并与光源基板电连接。输出端子包括两个触点，两个触点中的每一个的一端分别电连接到驱动板。输入端子包括分别对应于两个触头设置的两个连接头。两个连接头中的每一个的一端分别电连接到光源基板。

5. 发明申请

US20130093497A1 TUNNEL FIELD EFFECT TRANSISTOR (TFET) WITH LATERAL OXIDATION 有权
标题翻译：隧道场效应晶体管（TFET）具有侧向氧化
公开(公告)号：US20130093497A1
公开(公告)日：2013-04-18
申请号：US13274001
申请日：2011-10-14
申请人： Jack C. Lee , Han Zhao
发明人： Jack C. Lee , Han Zhao
IPC分类号： H03K17/74 , H01L21/336 , H01L29/78
CPC分类号： H01L29/66977 , H01L29/0653 , H01L29/0895 , H01L29/66742 , H01L29/78609 , H01L29/78618 , H01L29/78642 , H01L29/78681 , H01L29/78696
摘要： A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide region operates to reduce a tunneling effect in a tunnel region underlying a drain region, during an OFF-state of the TFET. The reduction in tunneling effect results in a reduction or elimination of a flow of OFF-state leakage current between the source region and the drain region. The TFET may have components made from group III-V compound materials.
摘要翻译：垂直模式隧道场效应晶体管（TFET）具有可相对于源极区域横向定位的氧化物区域。在TFET的截止状态期间，氧化物区域用于减小漏极区域下方的隧道区域中的隧道效应。隧道效应的降低导致源极区域和漏极区域之间的截止状态漏电流的流动的减少或消除。 TFET可以具有由III-V族复合材料制成的部件。

6. 发明授权

US08685647B2 SNP markers associated with polycystic ovary syndrome 有权
标题翻译：与多囊卵巢综合征相关的SNP标记
公开(公告)号：US08685647B2
公开(公告)日：2014-04-01
申请号：US13525774
申请日：2012-06-18
申请人： Zi-Jiang Chen , Han Zhao , Lin He , Yongyong Shi , Jinlong Ma , Yueran Zhao , Ling Geng , Li You
发明人： Zi-Jiang Chen , Han Zhao , Lin He , Yongyong Shi , Jinlong Ma , Yueran Zhao , Ling Geng , Li You
IPC分类号： C12Q1/68 , C40B30/04
CPC分类号： C12Q1/6886 , C12Q1/6883 , C12Q2600/156 , C12Q2600/172
摘要： The present invention discloses SNP markers associated with PCOS and provides probes, chips, primers, kits and methods for detecting the SNP markers. Furthermore, the present invention relates to the use of SNPs in predicting or diagnosing the risk of PCOS.
摘要翻译：本发明公开了与PCOS相关的SNP标记，并提供用于检测SNP标记的探针，芯片，引物，试剂盒和方法。此外，本发明涉及使用SNP来预测或诊断PCOS的风险。

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