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1. 发明申请

US20060134560A1 Method for fabricating semiconductor device 失效
公开(公告)号：US20060134560A1
公开(公告)日：2006-06-22
申请号：US11264427
申请日：2005-10-31
申请人： Sung-Kwon Lee , Gyu-Dong Park
发明人： Sung-Kwon Lee , Gyu-Dong Park
IPC分类号： G03F7/00
CPC分类号： H01L21/02118 , G03F7/09 , H01L21/022 , H01L21/02337 , H01L21/312
摘要： A method for fabricating a semiconductor device is provided. The method includes: preparing a substrate defined as active regions and inactive regions and provided with a plurality of conductive patterns; forming a buffer layer over the plurality of conductive patterns; forming an organic material having fluidity better than that of a photoresist layer on the buffer layer; flowing the organic material between the conductive patterns through a thermal treatment process, thereby filling a portion of each gap between the conductive patterns; forming the photoresist layer over the organic material and the buffer layer; forming a plurality of photoresist patterns opening the active regions through a photo-exposure process and a developing process; and performing an ion-implantation process using the plurality of photoresist patterns, thereby forming a plurality of junction regions in the active regions of the substrate.

2. 发明授权

US06787285B2 Pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator 失效
标题翻译：使用含有热酸发生剂的光致抗蚀剂组合物的光刻胶图案的图案宽度减肥抑制方法
公开(公告)号：US06787285B2
公开(公告)日：2004-09-07
申请号：US10006633
申请日：2001-12-05
申请人： Keun Kyu Kong , Gyu Dong Park , Jae Chang Jung , Ki Soo Shin
发明人： Keun Kyu Kong , Gyu Dong Park , Jae Chang Jung , Ki Soo Shin
IPC分类号： G03F7004
CPC分类号： G03F7/40 , G03F7/0395 , Y10S430/115 , Y10S430/122 , Y10S430/143 , Y10S430/168
摘要： A pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator. When the formed pattern is heated, a thermal generator generates acid during the heating process, and a cross-linking reaction occurs to photoresist compositions, thereby preventing pattern width slimming due to SEM-beam for CD measurement.
摘要翻译：使用含有热酸发生剂的光致抗蚀剂组合物的光致抗蚀剂图案的图案宽度减肥抑制方法。当形成的图案被加热时，热发生器在加热过程中产生酸，并且光致抗蚀剂组合物发生交联反应，从而防止由于用于CD测量的SEM束的图案宽度减小。

3. 发明授权

US07534553B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07534553B2
公开(公告)日：2009-05-19
申请号：US11264427
申请日：2005-10-31
申请人： Sung-Kwon Lee , Gyu-Dong Park
发明人： Sung-Kwon Lee , Gyu-Dong Park
IPC分类号： G03F7/26
CPC分类号： H01L21/02118 , G03F7/09 , H01L21/022 , H01L21/02337 , H01L21/312
摘要： A method for fabricating a semiconductor device is provided. The method includes: preparing a substrate defined as active regions and inactive regions and provided with a plurality of conductive patterns; forming a buffer layer over the plurality of conductive patterns; forming an organic material having fluidity better than that of a photoresist layer on the buffer layer; flowing the organic material between the conductive patterns through a thermal treatment process, thereby filling a portion of each gap between the conductive patterns; forming the photoresist layer over the organic material and the buffer layer; forming a plurality of photoresist patterns opening the active regions through a photo-exposure process and a developing process; and performing an ion-implantation process using the plurality of photoresist patterns, thereby forming a plurality of junction regions in the active regions of the substrate.
摘要翻译：提供一种制造半导体器件的方法。该方法包括：制备定义为有源区和非活性区的衬底，并设置有多个导电图案; 在所述多个导电图案上形成缓冲层; 形成流动性优于缓冲层上的光致抗蚀剂层的有机材料; 通过热处理工艺使有机材料在导电图案之间流动，由此填充导电图案之间的每个间隙的一部分; 在有机材料和缓冲层上形成光致抗蚀剂层; 形成通过曝光过程和显影过程打开活性区域的多个光致抗蚀剂图案; 以及使用所述多个光致抗蚀剂图案进行离子注入工艺，从而在所述衬底的有源区域中形成多个结区域。

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