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1. 发明授权

US08228159B1 Nanocomposite semiconducting material with reduced resistivity 有权
标题翻译：具有降低电阻率的纳米复合半导体材料
公开(公告)号：US08228159B1
公开(公告)日：2012-07-24
申请号：US12253413
申请日：2008-10-17
申请人： Kevin Robert Coffey , Vu Huynh Lam , Edward Dein , Andrew Peter Warren , Glenn Boreman , Guy V. Zummo , Wilson Caba
发明人： Kevin Robert Coffey , Vu Huynh Lam , Edward Dein , Andrew Peter Warren , Glenn Boreman , Guy V. Zummo , Wilson Caba
IPC分类号： H01C7/10
CPC分类号： H01C7/008 , H01C7/006
摘要： A resistor, fabricating method, and thermal sensor material for resistors that incorporate high Temperature Coefficient of Resistance (TCR) values and low resistivity for better sensitivity in infrared imaging applications are disclosed. Amorphous oxide thin films, preferably oxides of vanadium (VOx), were deposited on thermally grown silicon dioxide by direct current (DC) magnetron co-sputtering of noble metals (gold and platinum) in a controlled argon/oxygen atmosphere. The ideal conditions for preparing an amorphous vanadium oxide/noble metal thin film are identified. TCR and resistivity results showed that the additions of gold (Au) and platinum (Pt) into VOx reduced the resistivity. However, only gold (Au) was found to improve TCR value. Reducing the amount of oxygen in the thin film, further improved the ratio between TCR and resistivity. Infrared detection and imaging devices can be greatly improved with a “drop-in” amorphous vanadium oxide/noble metal thin film of the present invention.
摘要翻译：公开了一种用于电阻器的电阻器，制造方法和热传感器材料，其包含高温度电阻系数（TCR）值和低电阻率，用于在红外成像应用中更好的灵敏度。通过直接（DC）磁控管共溅射贵金属（金和铂）在受控的氩/氧气氛中，将非晶氧化物薄膜（优选钒的氧化物（VO x））沉积在热生长的二氧化硅上。鉴定了制备无定形氧化钒/贵金属薄膜的理想条件。 TCR和电阻率结果表明，向VOx中添加金（Au）和铂（Pt）降低了电阻率。然而，仅发现金（Au）可以提高TCR值。减少薄膜中的氧气量，进一步提高了TCR和电阻率之间的比例。本发明的“滴入”无定形氧化钒/贵金属薄膜可以大大改善红外检测和成像装置。

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