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1. 发明授权

US4528855A Integral differential and static pressure transducer 失效
标题翻译：积分微分和静压传感器
公开(公告)号：US4528855A
公开(公告)日：1985-07-16
申请号：US626804
申请日：1984-07-02
申请人： Gurnam Singh
发明人： Gurnam Singh
IPC分类号： G01L9/00 , G01L9/06 , G01L19/00
CPC分类号： G01L19/0092 , G01L15/00 , G01L9/0054 , G01L9/065
摘要： Differential and static pressure transducers are provided with piezoresistive elements connected in Wheatstone bridges on the 100 surface of a silicon chip over a diaphragm etched into the chip from the back. A thin disk diaphragm is used for differential pressure (DP) and a thicker annular diaphragm around the disk diaphragm is used for static pressure (SP) measurements. Two of the elements opposite each other in each bridge are produced along one crystallographic direction (110), and the other two are produced along an orthogonal crystallographic direction (110). Extra elements are produced for each pair to permit selection of a more closely matched set of four elements. A plurality of DP diaphragms with different diameters and respective bridges are provided along with a multiplexer for selecting a DP bridge in order to provide different ranges of sensitivity for the differential pressure measurements.
摘要翻译：差分和静态压力传感器提供了压电元件，其连接在硅芯片的100个表面的惠斯通电桥中，从背面蚀刻到芯片上的隔膜上。薄膜隔膜用于差压（DP），环形隔膜周围的较厚环形隔膜用于静压（SP）测量。在每个桥中彼此相对的两个元件沿着一个晶体学方向（110）产生，而另外两个元件沿着正交晶体学方向（1＆amp; upbar＆10）产生。为每对产生额外的元素，以允许选择更紧密匹配的四个元素集合。提供具有不同直径的多个DP隔膜和相应的桥，以及用于选择DP桥的多路复用器，以便为差压测量提供不同的灵敏度范围。

2. 发明授权

US4345476A Differential pressure transducer with high compliance, constant stress cantilever beam 失效
标题翻译：差压变送器具有高顺应性，恒应力悬臂梁
公开(公告)号：US4345476A
公开(公告)日：1982-08-24
申请号：US285238
申请日：1981-07-20
申请人： Gurnam Singh
发明人： Gurnam Singh
IPC分类号： G01L9/00 , G01L13/02
CPC分类号： G01L13/025 , G01L9/0052
摘要： In a differential pressure transducer, of the type having a cantilever beam mechanically linked to a pressure-sensitive diaphragm, and piezoelectric strain gauges diffused into or bonded onto the beam, the beam has a relatively high compliance as compared with the diaphragm to facilitate operation in low pressure ranges and to increase the overall operating range of the unit. In addition, the beam is constructed so that the total bending energy is transmitted to the area of the strain gauges so as to achieve near-perfect operating efficiencies.
摘要翻译：在具有机械连接到压敏膜的悬臂梁的类型的压差传感器中，以及扩散到或结合到梁上的压电应变仪，与隔膜相比，梁具有相对高的柔量，以便于在低压范围，并增加设备的整体工作范围。此外，梁被构造成使得总弯曲能量传递到应变计的区域，以便实现接近完美的操作效率。

3. 发明授权

US4278195A Method for low temperature bonding of silicon and silicon on sapphire and spinel to nickel and nickel steel and apparatus using such _a bonding technique 失效
标题翻译：将蓝宝石和尖晶石上的硅和硅低温键合到镍和镍钢的方法以及使用这种键合技术的设备
公开(公告)号：US4278195A
公开(公告)日：1981-07-14
申请号：US965350
申请日：1978-12-01
申请人： Gurnam Singh
发明人： Gurnam Singh
IPC分类号： B23K35/00 , B23K35/28 , C03C27/00 , H01L21/60 , H05K5/06
CPC分类号： H01L24/83 , B23K35/004 , B23K35/286 , C03C27/00 , H01L24/26 , B23K2035/008 , H01L2224/8319 , H01L2224/83801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01322 , H01L2924/09701
摘要： A method for low temperature bonding of silicon and silicon on sapphire and spinel to nickel and nickel steel using a layered structure with an aluminum interface between the nickel or nickel steel and the silicon. The bonding is achieved in a reducing atmosphere using a temperature of 640 to 650 degrees C. with a pressure of 100 to 150 psi on the layered structure for a period of approximately five minutes with a subsequent cooling to avoid strains in the bond. An example of the transducer apparatus utilizing such a bonding technique includes a nickel steel housing and a silicon on spinel transducer wafer having a silicon peripheral pad with an aluminum layer bonding the silicon pad to the nickel steel housing.BACKGROUND OF THE INVENTION1. Field of the InventionThe present invention relates to bonding techniques. More specifically, the present invention is directed to a method for bonding silicon to nickel and a transducer apparatus utilizing such a bonding technique.2. Description of the Prior ArtThe development of transducers such as those shown in U.S. Pat. Nos. 3,230,763 and 3,537,319 has led to a composite structure using silicon on sapphire (SOS). The sapphire with a silicon epitaxial layer grown on it may be used for pressure transducers and provides, in effect, strain sensitive resistors. The strain sensitive elements are shaped on the sapphire wafer by a suitable etching process with the resulting wafer being cut into a desired configuration by a diamond saw. A recent development has taken advantage of an improved stress transmission characteristic which is produced by having the composite transducer structure utilize silicon on spinel. Such a structure results in a superior transducer while retaining its electrical insulating characteristics. The production of such silicon on sapphire and silicon on spinel is a well-known technique and is discussed in the Journal of Crystal Growth (1971) in an article by G. W. Cullen on pages 107 to 125 entitled "The preparation and Properties of Chemically Vapor Deposited Silicon on Sapphire and Spinel." In both of these structures the composite end product must be ultimately bonded to a metal support or transducer housing in order to produce a viable transducer. The poor wettability of spinel and sapphire by many metals is well-known and offers a serious problem to the bonding of these materials to metals as well as to ceramics and glasses. One prior art attempt to bond sapphire to metal involved the growing of multiple metallic layers on one or both of the elements and then fusing them together at relatively high temperatures. However, the high temperatures involved can damage the strain elements deposited on the sapphire. On the other hand, the bonding of silicon on spinel to metal remains a problem which has limited the use of the corresponding composite transducer in a useful product.SUMMARY OF THE INVENTIONAn object of the present invention is to produce a method for bonding silicon to nickel.Another of the present invention is to produce an improved transducer apparatus utilizing a novel method of bonding of silicon to nickel.In accomplishing these and other objects, there has been provided, in accordance with the present invention, a low temperature bonding method for bonding silicon to nickel by introducing therebetween a layer of aluminum and subjecting the layered structure to a pressure of 100 to 150 psi at a temperature of 640 to 650 degrees C. for a period of approximately five minutes in a reducing atmosphere. An example of a transducer apparatus utilizing such a bonding technique includes a nickel steel housing and a silicon on spinel transducer wafer having silicon peripheral pads with an aluminum layer bonding the silicon pads to the nickel steel housing.
摘要翻译：使用在镍或镍钢与硅之间具有铝界面的分层结构将蓝宝石和尖晶石上的硅和硅低温键合到镍和镍钢的方法。在还原气氛中使用640至650℃的温度在100至150psi的压力下在层状结构上实现约5分钟的接合，随后冷却以避免粘结中的应变。使用这种接合技术的传感器装置的示例包括镍钢外壳和尖晶石换能器晶片上的硅，其具有硅外围垫，其具有将硅垫接合到镍钢外壳的铝层。

4. 发明授权

US4203327A Piezoresistive silicon strain sensors and pressure transducers incorporating them 失效
标题翻译：压阻硅应变传感器和压力传感器
公开(公告)号：US4203327A
公开(公告)日：1980-05-20
申请号：US920538
申请日：1978-06-29
申请人： Gurnam Singh
发明人： Gurnam Singh
IPC分类号： G01L9/00 , G01L13/02 , G01L9/06
CPC分类号： G01L19/147 , G01L13/025 , G01L19/0038 , G01L19/0645 , G01L9/0054 , G01L9/0083
摘要： Each sensor consists of a spinel substrate in the form of a beam or a diaphragm which carries a pattern of a plurality of doped silicon piezoresistive resistors. The latter are formed from layers of doped silicon, each of which layers has been epitaxially grown on a corresponding surface of the spinel substrate. The spinel minimizes the occurrence of leakage currents with respect to the resistors, while cooperating with the silicon to provide a high degree of stress transmission to the resistors. The beam form of sensor is shown as the sensor member of a differential fluid pressure to electric signal transducer, wherein the sensor is deflected and strained in accordance with the differential pressure to be sensed.
摘要翻译：每个传感器由以光束形式形成的尖晶石衬底或带有多个掺杂硅压阻电阻器的图案的振动膜组成。后者由掺杂硅的层形成，每个层已经在尖晶石衬底的相应表面上外延生长。尖晶石最小化相对于电阻器的泄漏电流的发生，同时与硅配合以向电阻器提供高度的应力传输。传感器的波束形式被示出为与电信号传感器的差分流体压力的传感器构件，其中传感器根据要感测的压差而偏转和应变。

5. 发明授权

US4395915A Pressure measuring apparatus 失效
标题翻译：压力测量仪
公开(公告)号：US4395915A
公开(公告)日：1983-08-02
申请号：US408296
申请日：1982-08-16
申请人： Gurnam Singh
发明人： Gurnam Singh
IPC分类号： G01L9/00 , G01L9/06 , G01L13/02 , G01L19/00 , G01L9/04
CPC分类号： G01L19/0092 , G01L13/025 , G01L9/0052 , G01L9/0055 , G01L9/06
摘要： An apparatus which utilizes solid state piezoresistive strain sensing means to measure the static pressure as well as the differential pressure across a primary element, such as an orifice plate, venturi tube, nozzle or wedge. In a preferred embodiment, the apparatus includes a dual pressure sensing transducer comprising a body, means for applying two different pressures to the body, first and second pressure diaphragms respectively, hermetically sealed to the body at first and second spaced apart portions of the body with a back wall of the second diaphragm forming one wall of a chamber which contains a desired reference pressure, a compliant cantilever beam fixedly mounted at one end thereof to the body, a strut wire coupled between the beam and the first diaphragm to cause deflection of the beam in response to movement of the first diaphragm due to an applied differential pressure, a first plurality of piezoresistive strain elements contained on a thinned portion of the beam for deflection therewith so that movement of the first diaphragm will result in changes in the electrical resistance of the first plurality of elements that are indicative of the differential pressure applied across the first diaphragm, a second plurality of piezoresistive strain elements contained on a front wall of the second diaphragm for deflection therewith so that movement of the second diaphragm in response to the static (line) pressure will result in changes in the electrical resistance of the second plurality of elements that are indicative of the static pressure with respect to the reference pressure.
摘要翻译：利用固态压阻应变传感装置来测量静压力以及诸如孔板，文丘里管，喷嘴或楔子之类的主要元件之间的差压的装置。在一个优选实施例中，该装置包括双重压力传感换能器，其包括主体，用于向主体施加两个不同压力的装置，第一和第二压力隔膜，分别在主体的第一和第二间隔部分处与主体气密密封，第二隔膜的后壁形成包含期望的参考压力的室的一个壁，其一端固定地安装在主体上的顺从悬臂梁，连接在梁和第一隔膜之间的支柱线，响应于由于施加的压差而引起的第一隔膜的移动而产生的第一多个压阻应变元件包含在用于偏转的梁的变薄部分上，使得第一隔膜的移动将导致电阻的变化指示施加在第一隔膜上的差压的第一多个元件 m，第二多个压阻应变元件，包含在第二隔膜的前壁上，用于与其一起偏转，使得响应于静态（线）压力的第二隔膜的移动将导致第二多个指示相对于参考压力的静压力的元件。

6. 发明授权

US4212209A Differential pressure to electric current transducer employing a strain sensitive resistive pattern on a substrate having a high modulus of elasticity 失效
标题翻译：在具有高弹性模量的基板上使用应变敏感电阻图案的电流传感器的差压
公开(公告)号：US4212209A
公开(公告)日：1980-07-15
申请号：US940333
申请日：1978-09-07
申请人： William F. Newbold , Gurnam Singh
发明人： William F. Newbold , Gurnam Singh
IPC分类号： G01L9/00 , G01L13/02 , G01L9/06
CPC分类号： G01L9/0052 , G01L13/025 , G01L9/0083
摘要： In a differential pressure to electric current transducer, a short sapphire slab carries a strain sensitive resistive pattern. The sapphire slab is an element of a much larger beam as the beam moves to change the stress of the other surfaces of the sapphire slab and varies the resistance of the silicon resistive pattern to produce an electric current signal indicative of the differential pressure.
摘要翻译：在与电流传感器的差压中，短蓝宝石板承载应变敏感电阻图案。蓝宝石板是随着光束移动以改变蓝宝石板的其他表面的应力而变化的较大光束的元件，并且改变硅电阻图案的电阻以产生指示压差的电流信号。

7. 发明授权

US4563901A Transducer 失效
标题翻译：传感器
公开(公告)号：US4563901A
公开(公告)日：1986-01-14
申请号：US530562
申请日：1983-09-09
申请人： Gurnam Singh
发明人： Gurnam Singh
IPC分类号： G01L9/00 , G01L13/02 , G01L7/08 , G01L9/06
CPC分类号： G01L19/0084 , G01L13/025 , G01L19/0038 , G01L19/0645
摘要： A dual differential pressure/static pressure unit including a housing and three approximately parallel diaphragms sealed therewith forming low and high pressure compartments. Incompressible fluid then fills the respective spaces between the center diaphragm and that on each side thereof. Differential pressure/static pressure sensors are then provided. The housing is provided with passageways to conduct each of said fluids to the respective high and low pressure sides of said sensors.
摘要翻译：双差压/静压单元，包括壳体和密封的三个大致平行的膜片，形成低压和高压室。然后，不可压缩的流体填充中心隔膜与其每一侧上的相应空间。然后提供差压/静压传感器。壳体设置有将每个所述流体传导到所述传感器的相应的高压侧和低压侧的通道。

8. 发明授权

US4347745A Pressure measuring apparatus 失效
标题翻译：压力测量仪
公开(公告)号：US4347745A
公开(公告)日：1982-09-07
申请号：US309331
申请日：1981-10-06
申请人： Gurnam Singh
发明人： Gurnam Singh
IPC分类号： G01L9/00 , G01L9/06 , G01L13/02 , G01L19/00 , G01L19/02 , G01L19/04
CPC分类号： G01L19/0092 , G01L13/025 , G01L19/02 , G01L9/0052 , G01L9/0055 , G01L9/065
摘要： An apparatus which utilizes solid state piezoresistive strain sensing means to measure the static pressure as well as the differential pressure across a primary element, such as an orifice plate, venturi tube, nozzle or wedge. In a preferred embodiment, the apparatus includes a dual pressure sensing transducer comprising a body, means for applying two different pressures to the body, first and second pressure diaphragms respectively, hermetically sealed to the body at first and second spaced apart portions of the body with a back wall of the second diaphragm forming one wall of a chamber which contains a desired reference pressure, a compliant cantilever beam fixedly mounted at one end thereof to the body, a strut wire coupled between the beam and the first diaphragm to cause deflection of the beam in response to movement of the first diaphragm due to an applied differential pressure, a first plurality of piezoresistive strain elements contained on a thinned portion of the beam, a second plurality of piezoresistive strain elements contained on a front wall of the second diaphragm.
摘要翻译：利用固态压阻应变传感装置来测量静压力以及诸如孔板，文丘里管，喷嘴或楔子之类的主要元件之间的差压的装置。在一个优选实施例中，该装置包括双重压力传感换能器，其包括主体，用于向主体施加两个不同压力的装置，第一和第二压力隔膜，分别在主体的第一和第二间隔部分处与主体气密密封，第二隔膜的后壁形成包含期望的参考压力的室的一个壁，其一端固定地安装在主体上的顺从悬臂梁，连接在梁和第一隔膜之间的支柱线，响应于由施加的压差引起的第一隔膜的移动，包含在梁的减薄部分上的第一多个压阻应变元件，包含在第二隔膜的前壁上的第二多个压阻应变元件。

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