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1. 发明申请

US20140065540A1 PHOTORESIST AND COATED SUBSTRATE COMPRISING SAME 审中-公开
标题翻译：包含它们的光电子和涂层基底
公开(公告)号：US20140065540A1
公开(公告)日：2014-03-06
申请号：US14076724
申请日：2013-11-11
申请人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/32 , C08F220/34 , C08F220/36 , C08F220/38 , C08F220/58 , C08F226/06 , C08F2220/1833 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/09 , G03F7/2041
摘要： A polymer includes the polymerized product of monomers including a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a, L1, LN, Ra, Rb, Rc, and X are defined herein. The polymer is a useful component of a photoresist composition.
摘要翻译：聚合物包括包含式（Ia），式（Ib）或式（Ia）和（Ib）的组合的含氮单体的单体的聚合产物和具有式（II）的酸可脱保护的单体，：其中a，L1，LN，Ra，Rb，Rc和X在本文中定义。聚合物是光致抗蚀剂组合物的有用组分。

2. 发明申请

US20130244178A1 PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT 审中-公开
标题翻译：包含多个组件的电影
公开(公告)号：US20130244178A1
公开(公告)日：2013-09-19
申请号：US13607728
申请日：2012-09-09
申请人： Gregory P. Prokopowicz , Gerhard Pohlers , Cong Liu , Chunyi Wu , Cheng-Bai Xu , Joon Seok Oh
发明人： Gregory P. Prokopowicz , Gerhard Pohlers , Cong Liu , Chunyi Wu , Cheng-Bai Xu , Joon Seok Oh
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/20
摘要： New photoresist compositions are provided that comprise a component that comprises two or more amide groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a multi-amide component that can function to decrease undesired photogenrated-acid diffusion out of unexposed regions of a photoresist coating layer
摘要翻译：提供新的光致抗蚀剂组合物，其包含包含两个或多个酰胺基团的组分。本发明优选的光致抗蚀剂可以包含具有光酸不稳定基团的树脂; 光致酸发生剂化合物; 以及可以起到减少光致抗蚀剂涂层的未曝光区域中不期望的光致酸扩散的作用的多酰胺组分

3. 发明授权

US06858379B2 Photoresist compositions for short wavelength imaging 有权
标题翻译：用于短波长成像的光刻胶组合物
公开(公告)号：US06858379B2
公开(公告)日：2005-02-22
申请号：US10101768
申请日：2002-03-20
申请人： Anthony Zampini , Charles R. Szmanda , Gary N. Taylor , James F. Cameron , Gerhard Pohlers
发明人： Anthony Zampini , Charles R. Szmanda , Gary N. Taylor , James F. Cameron , Gerhard Pohlers
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027 , G03C5/00
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046 , G03F7/0395 , Y10S430/108
摘要： New photoresists are provided that are suitable for short wavelength imaging, including sub-200 nm such as 157 nm. In one aspect, resists of the invention comprise a fluorine-containing polymer, a photoactive component, and one or more additional components of an amine or other basic composition, a dissolution inhibitor compound, a surfactant or leveling agent, or a plasticizer material. In another aspect, resists of the invention contain a fluorine-containing resin and one or more photoacid generator compounds, particularly non-aromatic onium salts and imidosulfonates, and other non-ionic photoacid generator compounds.
摘要翻译：提供了适用于短波长成像的新型光致抗蚀剂，包括亚200nm，例如157nm。一方面，本发明的抗蚀剂包含含氟聚合物，光活性组分和胺或其它碱性组合物的一种或多种另外的组分，溶解抑制剂化合物，表面活性剂或流平剂或增塑剂材料。在另一方面，本发明的抗蚀剂含有含氟树脂和一种或多种光酸产生剂化合物，特别是非芳族鎓盐和亚氨磺酸盐，以及其它非离子光酸产生剂化合物。

4. 发明授权

US08815754B2 Photoresists and methods for use thereof 有权
标题翻译：光刻胶及其使用方法
公开(公告)号：US08815754B2
公开(公告)日：2014-08-26
申请号：US12969183
申请日：2010-12-15
申请人： Gerhard Pohlers
发明人： Gerhard Pohlers
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/266 , G03F7/0388 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/40 , H01L21/0274 , H01L29/36
摘要： New photoresists are provided that comprise preferably as distinct components: a resin, a photoactive component and a phenolic component Preferred photoresists of the invention are can be useful for ion implant lithography protocols.
摘要翻译：提供了新的光致抗蚀剂，其优选地包含不同的组分：树脂，光活性组分和酚组分。本发明的优选光刻胶可用于离子注入光刻方案。

5. 发明申请

US20110254133A1 PHOTORESISTS AND METHODS FOR USE THEREOF 有权
标题翻译：光电及其使用方法
公开(公告)号：US20110254133A1
公开(公告)日：2011-10-20
申请号：US12969319
申请日：2010-12-15
申请人： Gerhard POHLERS
发明人： Gerhard POHLERS
IPC分类号： H01L29/36 , G03F7/004 , H01L21/425 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0085 , G03F7/0397 , G03F7/0752 , G03F7/40
摘要： New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.
摘要翻译：提供新的光致抗蚀剂，其包含含Si组分，并且其特别适用于离子植入光刻应用。本发明的光刻胶可以表现出对下面的无机表面（例如SiON，氧化硅，氮化硅和其它无机表面）的良好粘合性。

6. 发明授权

US06783912B2 Photoacid generators and photoresists comprising same 有权
标题翻译：含有它的光酸产生剂和光致抗蚀剂
公开(公告)号：US06783912B2
公开(公告)日：2004-08-31
申请号：US09795661
申请日：2001-02-27
申请人： James F. Cameron , Gerhard Pohlers
发明人： James F. Cameron , Gerhard Pohlers
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/038 , G03F7/0382 , G03F7/039 , Y10S430/106 , Y10S430/111
摘要： New photoacid generator compounds (“PAGs”) are provided and photoresist compositions that comprise such compounds. In particular, non-ionic substituted disulfone compounds PAGS are provided, including disulfone PAGs that contain a diazo, substituted methylene or hydrazine moiety interposed between substituted sulfone groups. Also provided are positive- and negative-acting chemically amplified resists that contain such PAGs and that are preferably imaged with sub-300 nm or sub-200 nm radiation such as 248 nm, 193 nm, or 157 nm radiation.
摘要翻译：提供新的光致酸发生剂化合物（“PAG”）和包含这些化合物的光致抗蚀剂组合物。特别地，提供了非离子取代的二砜化合物PAGS，包括在取代的砜基之间含有重氮，取代的亚甲基或肼部分的二砜PAG。还提供了含有这种PAG的正性和负性化学放大抗蚀剂，并且优选用亚300nm或亚-200nm辐射如248nm，193nm或157nm辐射成像。

7. 发明授权

US09665001B2 Photoresists and methods for use thereof 有权
公开(公告)号：US09665001B2
公开(公告)日：2017-05-30
申请号：US12969319
申请日：2010-12-15
申请人： Gerhard Pohlers
发明人： Gerhard Pohlers
IPC分类号： G03F7/004 , G03F7/039 , G03F7/075 , G03F7/40 , G03F7/008
CPC分类号： G03F7/0392 , G03F7/0085 , G03F7/0397 , G03F7/0752 , G03F7/40
摘要： New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.

8. 发明授权

US08722825B2 Surface active additive and photoresist composition comprising same 有权
标题翻译：包含其的表面活性添加剂和光致抗蚀剂组合物
公开(公告)号：US08722825B2
公开(公告)日：2014-05-13
申请号：US13482574
申请日：2012-05-29
申请人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
IPC分类号： C08F226/06 , C08F214/18 , C08F220/34
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/32 , C08F220/34 , C08F220/36 , C08F220/38 , C08F220/58 , C08F226/06 , C08F2220/1833 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/09 , G03F7/2041
摘要： A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a is 0 or 1, each Ra is independently H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is a straight chain or branched C1-20 alkylene group, or a monocyclic, polycyclic, or fused polycyclic C3-20 cycloalkylene group, each Rb is independently H, C1-10 alkyl, C3-20 cycloalkyl, C3-20 heterocycloalkyl, an aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group, where each Rb is separate or at least one Rb is attached to an adjacent Rb; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic C3-20 heterocycloalkylene group, and X is H, C1-10 alkyl, aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group; and each Rc is independently C1-10 alkyl, C3-20 cycloalkyl, or C3-20 heterocycloalkyl, wherein each Rc is separate or at least one Rc is attached to an adjacent Rc.
摘要翻译：聚合物包含包含式（Ia），式（Ib）或式（Ia）和（Ib）的组合的含氮单体的单体的聚合产物和具有式（II）的酸可去保护的单体，：其中a为0或1，每个R a独立地为H，F，C 1-10烷基或C 1-10氟烷基，L 1为直链或支链C 1-20亚烷基，或单环，多环或稠合多环C3 -20个亚环烷基，每个R b独立地为H，C 1-10烷基，C 3-20环烷基，C 3-20杂环烷基，脂族C 5-20氧羰基或任选地包含杂原子取代基的C1-30酰基，其中每个R b 是分开的或至少一个Rb连接到相邻的Rb; LN是含氮单环，多环或稠合多环C 3-20杂环亚烷基，X是H，C 1-10烷基，脂肪族C 5-20氧羰基或任选包含杂原子取代基的C 1-3酰基; 并且每个R c独立地为C 1-10烷基，C 3-20环烷基或C 3-20杂环烷基，其中每个R c是分开的或至少一个R c连接到相邻的Rc。

9. 发明申请

US20130137035A1 SURFACE ACTIVE ADDITIVE AND PHOTORESIST COMPOSITION COMPRISING SAME 有权
标题翻译：表面活性添加剂和包含其的光电组合物
公开(公告)号：US20130137035A1
公开(公告)日：2013-05-30
申请号：US13482574
申请日：2012-05-29
申请人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
IPC分类号： C08F220/34 , C08F226/06
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/32 , C08F220/34 , C08F220/36 , C08F220/38 , C08F220/58 , C08F226/06 , C08F2220/1833 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/09 , G03F7/2041
摘要： A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a is 0 or 1, each Ra is independently H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is a straight chain or branched C1-20 alkylene group, or a monocyclic, polycyclic, or fused polycyclic C3-20 cycloalkylene group, each Rb is independently H, C1-10 alkyl, C3-20 cycloalkyl, C3-20 heterocycloalkyl, an aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group, where each Rb is separate or at least one Rb is attached to an adjacent Rb; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic C3-20 heterocycloalkylene group, and X is H, C1-10 alkyl, aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group; and each Rc is independently C1-10 alkyl, C3-20 cycloalkyl, or C3-20 heterocycloalkyl, wherein each Rc is separate or at least one Rc is attached to an adjacent Rc.
摘要翻译：聚合物包含包含式（Ia），式（Ib）或式（Ia）和（Ib）的组合的含氮单体的单体的聚合产物和具有式（II）的酸可去保护的单体，：其中a为0或1，每个R a独立地为H，F，C 1-10烷基或C 1-10氟烷基，L 1为直链或支链C 1-20亚烷基，或单环，多环或稠合多环C3 -20个亚环烷基，每个R b独立地为H，C 1-10烷基，C 3-20环烷基，C 3-20杂环烷基，脂族C 5-20氧羰基或任选地包含杂原子取代基的C1-30酰基，其中每个R b 是分开的或至少一个Rb连接到相邻的Rb; LN是含氮单环，多环或稠合多环C 3-20杂环亚烷基，X是H，C 1-10烷基，脂肪族C 5-20氧羰基或任选包含杂原子取代基的C 1-3酰基; 并且每个R c独立地为C 1-10烷基，C 3-20环烷基或C 3-20杂环烷基，其中每个R c是分开的或至少一个R c连接到相邻的Rc。

10. 发明申请

US20110254140A1 PHOTORESISTS AND METHODS FOR USE THEREOF 有权
标题翻译：光电及其使用方法
公开(公告)号：US20110254140A1
公开(公告)日：2011-10-20
申请号：US12969183
申请日：2010-12-15
申请人： Gerhard POHLERS
发明人： Gerhard POHLERS
IPC分类号： H01L29/02 , H01L21/265 , G03F7/20
CPC分类号： H01L21/266 , G03F7/0388 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/40 , H01L21/0274 , H01L29/36
摘要： New photoresists are provided that comprise preferably as distinct components: a resin, a photoactive component and a phenolic component Preferred photoresists of the invention are can be useful for ion implant lithography protocols.
摘要翻译：提供了新的光致抗蚀剂，其优选地包含不同的组分：树脂，光活性组分和酚组分。本发明的优选光刻胶可用于离子注入光刻方案。

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