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1. 发明授权

US4396998A Thermally reprogrammable memory array and a thermally reprogrammable memory cell therefor 失效
标题翻译：热可重编程存储器阵列和一种热可重新编程的存储单元
公开(公告)号：US4396998A
公开(公告)日：1983-08-02
申请号：US181572
申请日：1980-08-27
申请人： Robert N. Hunt , George N. Ong
发明人： Robert N. Hunt , George N. Ong
IPC分类号： G11C17/14 , G11C11/21
CPC分类号： G11C17/14
摘要： An electrically programmable memory cell comprises two terminals, a unidirectional and/or controllable semiconductor device having anode and cathode regions and a programmable resistor, said anode and cathode regions of the semiconductor device and the programmable resistor being connected in series between the terminals. The programmable resistor comprises a mixture of finely divided metallic material dispersed in a thermoplastic resin. The programmable resistor is initially substantially nonconductive (having a resistivity, for example, in excess of 1 mega ohms per cubic cm). By forcing a sufficient current through the terminals for a period of time, the resistance of the programmable resistor drops drastically to the extent that it may be considered a conductor (having a resistivity, for example, of less than 100 ohms per cubic cm). The programmable resistor may be returned to its substantially nonconductive condition by heating to a temperature above which the memory cell is normally used and below which the semiconductor device is damaged. The semiconductor device may be a transistor, for example, a field effect transistor, a diode or the like.
摘要翻译：电可编程存储单元包括两个端子，具有阳极和阴极区域的单向和/或可控半导体器件和可编程电阻器，所述半导体器件的所述阳极和阴极区域以及可编程电阻器串联在端子之间。可编程电阻器包括分散在热塑性树脂中的细碎金属材料的混合物。可编程电阻器最初基本上不导电（具有例如超过1兆欧姆每立方厘米的电阻率）。通过在一段时间内强制通过端子的足够的电流，可编程电阻的电阻急剧下降到可以被认为是导体（具有例如小于100欧姆/立方厘米的电阻率）的程度。可编程电阻器可以通过加热到通常使用存储单元的温度而返回到其基本不导电的状态，半导体器件被损坏之下。半导体器件可以是晶体管，例如场效应晶体管，二极管等。

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