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1. 发明授权

US4260999A Semiconductor device and method of making the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US4260999A
公开(公告)日：1981-04-07
申请号：US28022
申请日：1979-04-06
申请人： Fumio Yoshioka
发明人： Fumio Yoshioka
IPC分类号： H01L21/761 , H01L21/8222 , H01L21/8228 , H01L27/082 , H01L29/72
CPC分类号： H01L27/0826 , H01L21/761 , H01L21/8222
摘要： A semiconductor device and a method of manufacturing the same, wherein there are provided, on a semiconductor substrate of a first conductivity type, a first and a second epitaxial layer each having a second conductivity type opposite to the first conductivity type. A plurality of regions are defined in the entire area of the epitaxial layer by being isolated by means of an isolation layer of the first conductivity type which extends from the surface of the second epitaxial layer to the semiconductor substrate. Furthermore, a first buried layer of the second conductivity type is formed in each of the isolated regions in such a manner as to extend in the first epitaxial layer and semiconductor substrate so that a transistor can be formed on each first buried layer.
摘要翻译：一种半导体器件及其制造方法，其中在第一导电类型的半导体衬底上设置第一和第二外延层，其具有与第一导电类型相反的第二导电类型。通过从第二外延层的表面延伸到半导体衬底的第一导电类型的隔离层来隔离外延层的整个区域中的多个区域。此外，在每个隔离区域中形成第二导电类型的第一埋层，以便在第一外延层和半导体衬底中延伸，使得可以在每个第一掩埋层上形成晶体管。

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