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    • 8. 发明授权
    • Circuit arrangement for the discrete-time comparison of signals
    • 用于信号离散时间比较的电路布置
    • US06967506B2
    • 2005-11-22
    • US10321154
    • 2002-12-17
    • Frederic Roger
    • Frederic Roger
    • H03K3/356H03K5/22
    • H03K3/356139
    • The invention pertains to a circuit arrangement (comparator) for the discrete-time comparison of input signals (ip, vrefp) and for making available a pair of complementary output levels (vdd, vss) which corresponds to the result of the comparison on a line pair (P, N), wherein said circuit arrangement comprises a reset circuit (12) for balancing the line potentials during a reset phase, an input circuit (14) for generating a potential difference on the line pair (P, N) in accordance with an input signal difference, a first bistable flip-flop (16) for amplifying the generated potential difference and a second bistable flip-flop (20) that is connected by means of a connecting circuit (18) and serves for additionally amplifying the generated potential difference to the desired complementary output levels.According to the invention, a third bistable flip-flop (30a, 30b) is provided that, when connecting the second flip-flop (20) parallel to the first flip-flop (16), amplifies the generated potential difference and thusly reduces the comparison time without significantly impairing the current consumption.
    • 本发明涉及用于输入信号(ip,vrefp)的离散时间比较的电路装置(比较器),并且用于提供一对互补输出电平(vdd,vss),其对应于一行上的比较结果 对(P,N),其中所述电路装置包括用于在复位阶段平衡线电位的复位电路(12),用于根据线对(P,N)产生电位差的输入电路(14) 具有输入信号差,用于放大所产生的电位差的第一双稳态触发器(16)和借助于连接电路(18)连接的第二双稳态触发器(20),用于另外放大所产生的 与期望的互补输出电平的电位差。 根据本发明,提供一种第三双稳态触发器(30a,30b),当与第一触发器(16)并联连接第二触发器(20)时,放大产生的电位差 减少比较时间,而不会显着损害电流消耗。
    • 10. 发明授权
    • Semiconductor body having a terminal cell
    • 具有端子电池的半导体体
    • US08525266B2
    • 2013-09-03
    • US13407575
    • 2012-02-28
    • Wolfgang ReinprechtFrederic Roger
    • Wolfgang ReinprechtFrederic Roger
    • H01L23/62
    • H01L27/0266H01L27/0207
    • A semiconductor body comprising a first connection for feeding an upper supply potential and a first and a second terminal cell, which are situated at a distance from each other. The semiconductor body further comprises an arrester structure, which is arranged between the first and second terminal cells in a p-doped substrate. The arrester structure comprises a first and a second p-channel field-effect transistor structure, each of which is set in a respective n-doped well substantially parallel to the first and second terminal cells, and a diode structure with a p-doped region set in a further n-doped well between the n-doped wells of the first and second p-channel field-effect transistor structures. The diode structure is designed to activate the first and second p-channel field-effect transistor structure as arrester elements during an electrostatic discharge in the semiconductor body.
    • 一种半导体本体,包括用于馈送上电源的第一连接和位于彼此间隔一定距离的第一和第二端子单元。 半导体本体还包括一个放电器结构,它被布置在p掺杂衬底中的第一和第二端子单元之间。 避雷器结构包括第一和第二p沟道场效应晶体管结构,其每一个被设置在基本上平行于第一和第二端子单元的相应的n掺杂阱中,以及具有p掺杂区的二极管结构 设置在第一和第二p沟道场效应晶体管结构的n个掺杂阱之间的另一n掺杂阱中。 二极管结构被设计成在半导体主体中的静电放电期间激活第一和第二p沟道场效应晶体管结构作为避雷器元件。