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    • 1. 发明授权
    • Reducing power consumption at a cache
    • 降低高速缓存的功耗
    • US07647514B2
    • 2010-01-12
    • US11198559
    • 2005-08-05
    • Toru IshiharaFarzan Fallah
    • Toru IshiharaFarzan Fallah
    • G06F1/32
    • G06F1/3275G06F1/3225G06F12/0864G06F2212/1028G06F2212/271Y02D10/13Y02D10/14Y02D50/20
    • In one embodiment, a method for reducing power consumption at a cache includes determining a nonuniform architecture for a cache providing an optimum number of cache ways for each cache set in the cache. The nonuniform architecture allows cache sets in the cache to have associativity values that differ from each other. The method also includes implementing the nonuniform architecture in the cache to reduce power consumption at the cache. In another embodiment, the method also includes determining a code placement according to which code is writeable to a memory separate from the cache. The code placement reduces occurrences of inter cache-line sequential flows when the code is loaded from the memory to the cache. The method also includes compiling the code according to the code placement and writing the code to the memory for subsequent loading from the memory to the cache according to the code placement to further reduce power consumption at the cache.
    • 在一个实施例中,一种用于降低高速缓存中的功耗的方法包括:为高速缓存中的每个高速缓存集提供最佳数量的高速缓存路径的高速缓存的确定非均匀架构。 非均匀结构允许缓存中的高速缓存集具有彼此不同的关联性值。 该方法还包括在高速缓存中实现非均匀结构以降低高速缓存的功耗。 在另一个实施例中,该方法还包括根据哪个代码可写入与高速缓存分离的存储器来确定代码布局。 当代码从内存加载到高速缓存时,代码布局可以减少缓存间间隔线顺序流的发生。 该方法还包括根据代码放置编译代码,并将代码写入存储器,以便随后根据代码放置从存储器加载到高速缓存,以进一步降低高速缓存的功耗。
    • 5. 发明申请
    • Reducing power consumption at a cache
    • 降低高速缓存的功耗
    • US20070083783A1
    • 2007-04-12
    • US11198693
    • 2005-08-05
    • Toru IshiharaFarzan Fallah
    • Toru IshiharaFarzan Fallah
    • G06F1/32
    • G06F1/3203G06F1/3275G06F2212/271Y02D10/13Y02D10/14
    • In one embodiment, a method for reducing power consumption at a cache includes determining a code placement according to which code is writable to a memory separate from a cache. The code placement reduces occurrences of inter cache-line sequential flows when the code is loaded from the memory to the cache. The method also includes compiling the code according to the code placement and writing the code to the memory for subsequent loading from the memory to the cache according to the code placement to reduce power consumption at the cache. In another embodiment, the method also includes determining a nonuniform architecture for the cache providing an optimum number of cache ways for each cache set in the cache. The nonuniform architecture allows cache sets in the cache to have associativity values that differ from each other. The method also includes implementing the nonuniform architecture in the cache to further reduce power consumption at the cache.
    • 在一个实施例中,一种用于降低高速缓存功耗的方法包括根据哪个代码可写入与高速缓存分开的存储器来确定代码放置。 当代码从内存加载到高速缓存时,代码布局可以减少缓存间间隔线顺序流的发生。 该方法还包括根据代码放置编译代码并将代码写入存储器,以便随后根据代码放置从存储器加载到高速缓存,以减少高速缓存的功耗。 在另一个实施例中,该方法还包括确定高速缓存的不均匀架构,为高速缓存中的每个高速缓存集提供最佳数量的高速缓存路。 非均匀结构允许缓存中的高速缓存集具有彼此不同的关联性值。 该方法还包括在高速缓存中实现非均匀结构,以进一步降低高速缓存的功耗。
    • 9. 发明授权
    • PG-gated data retention technique for reducing leakage in memory cells
    • 用于减少存储单元泄漏的PG门控数据保留技术
    • US07447101B2
    • 2008-11-04
    • US11615422
    • 2006-12-22
    • Farzan FallahBehnam AmelifardMassoud Pedram
    • Farzan FallahBehnam AmelifardMassoud Pedram
    • G11C5/14G11C11/00
    • G11C11/417
    • A method of forming a memory cell includes coupling a first transistor between a supply rail of a memory cell and a node operable to accept a supply voltage. The method further includes coupling a second transistor between a ground rail of the cell and a node operable to accept a ground. In one embodiment, the method includes forming the cell to accept selectively applied external voltages, wherein the external voltages are selected to minimize leakage current in the cell. In another embodiment, the method includes forming at least one of the first and the second transistors to have a channel width and/or a threshold voltage selected to minimize a total leakage current in the cell.
    • 形成存储单元的方法包括将存储单元的电源轨和可操作以接受电源电压的节点之间的第一晶体管耦合。 该方法还包括将第二晶体管耦合在电池的接地导轨和可操作以接受接地的节点之间。 在一个实施例中,该方法包括形成电池以接受选择性地施加的外部电压,其中选择外部电压以最小化电池中的泄漏电流。 在另一个实施例中,该方法包括形成第一和第二晶体管中的至少一个以具有选择的沟道宽度和/或阈值电压以最小化单元中的总泄漏电流。