专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

US20230159331A1 LITHIUM NITRIDE MANUFACTURING DEVICE AND METHOD OF MANUFACTURING LITHIUM NITRIDE 审中-公开
公开(公告)号：US20230159331A1
公开(公告)日：2023-05-25
申请号：US17919119
申请日：2021-03-12
申请人： FURUKAWA CO., LTD.
发明人： Tetsuya Matsubara
IPC分类号： C01B21/06 , B01J15/00 , B01J19/18 , B01J19/00
CPC分类号： C01B21/061 , B01J15/00 , B01J19/18 , B01J19/0013 , B01J2219/00076
摘要： Provided is a lithium nitride manufacturing device (10) for heating a lithium member (9) in a nitrogen atmosphere to nitride the lithium member (9) such that lithium nitride is manufactured, the lithium nitride manufacturing device including: a reaction tank (1) where a nitriding reaction of the lithium member (9) is performed; a heating unit (2) that heats the lithium member (9); an atmosphere control unit (3) that controls a dew point in the reaction tank (1); and an atmosphere cooling unit (4) that cools an inside of the reaction tank (1).

2. 发明申请

US20220336853A1 METHOD OF MANUFACTURING SULFIDE-BASED INORGANIC SOLID ELECTROLYTE MATERIAL 有权
公开(公告)号：US20220336853A1
公开(公告)日：2022-10-20
申请号：US17766120
申请日：2020-08-18
申请人： FURUKAWA CO., LTD.
发明人： Tatsushi Yoshida
IPC分类号： H01M10/0562 , C01B17/20 , C01B17/22
摘要： The method of manufacturing a sulfide-based inorganic solid electrolyte material, including: (A) preparing a sulfide-based inorganic solid electrolyte material in a vitreous state; and (B) annealing the sulfide-based inorganic solid electrolyte material in the vitreous state using a heating unit. Step (B) includes a step (B1) of disposing the sulfide-based inorganic solid electrolyte material in the vitreous state in a heating space, a step (B2) of annealing the sulfide-based inorganic solid electrolyte material in the vitreous state disposed in the heating space while increasing a temperature of the heating unit from an initial temperature T0 to an annealing temperature T1, and a step (B3) of annealing the sulfide-based inorganic solid electrolyte material in the vitreous state disposed in the heating space at the annealing temperature T1, and a temperature increase rate from the initial temperature T0 to the annealing temperature T1 in the step (B2) is 2° C./min or higher.

3. 发明申请

US20200058490A1 GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：US20200058490A1
公开(公告)日：2020-02-20
申请号：US16476506
申请日：2017-12-25
申请人： FURUKAWA CO., LTD.
发明人： Yasunobu SUMIDA , Yasuharu FUJIYAMA
IPC分类号： H01L21/02 , H01L29/20
摘要： A method for manufacturing a group III nitride semiconductor substrate includes a sapphire substrate preparation step S10 for preparing a sapphire substrate having, as a main surface, a {10-10} plane or a plane obtained by inclining the {10-10} plane at a predetermined angle in a predetermined direction; a heat treatment step S20 for performing a heat treatment over the sapphire substrate while performing a nitriding treatment or without performing the nitriding treatment; a buffer layer forming step S30 for forming a buffer layer over the main surface of the sapphire substrate after the heat treatment; and a growth step S40 for forming a group III nitride semiconductor layer, in which a growth surface has a predetermined plane orientation, over the buffer layer, in which at least one of a plane orientation of the main surface of the sapphire substrate, presence or absence of the nitriding treatment during the heat treatment, and a growth temperature in the buffer layer forming step is adjusted such that the growth surface of the group III nitride semiconductor layer has the predetermined plane orientation.

4. 发明申请

US20200032418A1 GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：US20200032418A1
公开(公告)日：2020-01-30
申请号：US16497842
申请日：2018-03-19
申请人： FURUKAWA CO., LTD.
发明人： Hiroki GOTO , Yujiro ISHIHARA
IPC分类号： C30B29/40 , H01L29/20 , C30B25/18 , C30B29/68 , C23C16/02 , C23C16/30
摘要： There is provided a group III nitride semiconductor substrate (free-standing substrate (30)) that is formed of a group III nitride semiconductor crystal and has a thickness of 300 μm or more and 1000 μm or less. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A difference in a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on each of the first and second main surfaces in parallel to an m axis of the group III nitride semiconductor crystal is 500 arcsec or less.

5. 发明授权

US10468573B2 Thermoelectric conversion material 有权
公开(公告)号：US10468573B2
公开(公告)日：2019-11-05
申请号：US15915793
申请日：2018-03-08
申请人： FURUKAWA CO., LTD.
发明人： Ge Nie , Junqing Guo , Masaaki Kikuchi , Takahiro Ochi , Shogo Suzuki , Taketoshi Tomida
IPC分类号： H01L35/18 , H01L35/14 , H01L35/10 , C22C12/00 , H01L35/34 , H01L35/08 , C22C1/02 , C22C1/04
摘要： A thermoelectric conversion material has a composition represented by General Formula LkRrTt−mMmSbx. Here, L includes at least one element selected from rare earth elements. R includes two or more elements selected from the group consisting of alkali metal elements, alkali earth metal elements, Group 4 elements, and Group 13 elements. T includes at least one element selected from Fe and Co. M includes at least one element selected from the group consisting of Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au. In addition, 0.50≤k≤1.00, 0.1≤r≤0.5, 3.0≤t−m≤5.0, 0≤m≤0.5, 10.0≤x≤11.5, and x/t

6. 发明申请

US20170279025A1 THERMOELECTRIC CONVERSION MATERIAL, METHOD OF MANUFACTURING THERMOELECTRIC CONVERSION MATERIAL, AND THERMOELECTRIC CONVERSION MODULE 审中-公开
公开(公告)号：US20170279025A1
公开(公告)日：2017-09-28
申请号：US15510035
申请日：2015-09-09
申请人： FURUKAWA CO., LTD.
发明人： Tomohide HARAGUCHI , Kenta KAWANO , Shoji TAKAHASHI , Takahiro OCHI , Masaaki KIKUCHI , Shogo SUZUKI , Taketoshi TOMIDA , Atsuro SUMIYOSHI , Ge NIE , Satoru ITO , Junqing GUO
IPC分类号： H01L35/22 , H01L35/34 , H01L35/32
CPC分类号： H01L35/22 , H01L29/06 , H01L35/26 , H01L35/32 , H01L35/34
摘要： A thermoelectric conversion material (10) according to an embodiment includes a plurality of parent-phase particles (22) and nanoparticles (30). The parent-phase particles (22) have a crystalline structure. Each of the nanoparticles (30) includes an oxide and exists at an interface between the parent-phase particles (22). The nanoparticles (30) include at least one element that constitutes the crystalline structure. When a range of 6 μm×4 μm of the thermoelectric conversion material (10) is observed with a scanning electron microscope to acquire one sheet of cross-sectional observation image, an average particle diameter d, which is an average of an equivalent circle diameter of a particle group including the parent-phase particles (22) and the nanoparticles (30) which are observed on the cross-sectional observation image, is equal to or more than 100 nm and equal to or less than 1000 nm.

7. 发明授权

US09372215B2 Electrical resistance measurement apparatus and electrical resistance measurement method 有权
标题翻译：电阻测量装置和电阻测量方法
公开(公告)号：US09372215B2
公开(公告)日：2016-06-21
申请号：US13786825
申请日：2013-03-06
申请人： FURUKAWA CO., LTD.
发明人： Akihide Hamano
IPC分类号： G01R27/02 , G01N21/3581
CPC分类号： G01R27/02 , G01N21/3581
摘要： An electrical resistance measurement apparatus includes a light irradiation unit that irradiates a conductive thin film with terahertz light, a reflection light detection unit that detects reflection light from the conductive thin film, and a computer containing a storage that stores correlation between the reflectance of the terahertz light from the conductive thin film and electrical resistance of the conductive thin film. The computer further containing a processor that determines, reflectance of the terahertz light from the conductive thin film based on a result of detection performed by the reflection light detection unit, and determines the electrical resistance of the conductive thin film based on the correlation and a result of the determination of the reflectance.
摘要翻译：一种电阻测量装置，包括用太赫兹光照射导电薄膜的光照射单元，检测来自导电薄膜的反射光的反射光检测单元和包含存储器的计算机，该存储器存储太赫兹的反射率之间的相关性导电薄膜的光和导电薄膜的电阻。计算机还包含基于由反射光检测单元执行的检测结果确定来自导电薄膜的太赫兹光的反射率的处理器，并且基于相关性确定导电薄膜的电阻，并且结果的反射率的确定。

8. 发明申请

US20150318460A1 THERMOELECTRIC CONVERSION MODULE 审中-公开
标题翻译：热电转换模块
公开(公告)号：US20150318460A1
公开(公告)日：2015-11-05
申请号：US14647336
申请日：2013-11-28
申请人： FURUKAWA CO., LTD.
发明人： Shogo SUZUKI , Masaaki KIKUCHI , Takahiro OCHI , Satoru ITO , Junqing GUO
IPC分类号： H01L35/32 , H01L35/18
CPC分类号： C22C5/08 , C22C9/00 , C22C12/00 , C22C13/00 , C22C19/058 , C22C19/07 , C22C21/02 , C22C27/02 , C22C27/025 , C22C27/04 , H01L35/08 , H01L35/18 , H01L35/32
摘要： A thermoelectric conversion module includes a p-type thermoelectric conversion member (111) and an n-type thermoelectric conversion member (112) that contain Sb, and an electrode member (120) that is joined to the p-type thermoelectric conversion member (111) and the n-type thermoelectric conversion member (112), composed of an alloy of Cu and a metal material M1 having a lower thermal expansion coefficient than that of Cu, and includes two or more crystalline phases composed of Cu and M1. Therefore, it is possible to improve durability while realizing the properties required for the thermoelectric conversion module.
摘要翻译：热电转换模块包括含有Sb的p型热电转换元件（111）和n型热电转换元件（112）和与p型热电转换元件（111）连接的电极元件（120））和由Cu的合金和具有比Cu的热膨胀系数低的金属材料M1组成的n型热电转换元件（112），并且包括由Cu和M1组成的两个或更多个结晶相。因此，可以在实现热电转换模块所需的性能的同时提高耐久性。

9. 发明授权

US09162412B2 Briquetting machine control device 有权
标题翻译：压块机控制装置
公开(公告)号：US09162412B2
公开(公告)日：2015-10-20
申请号：US14088476
申请日：2013-11-25
申请人： Furukawa Co., Ltd. , Furukawa Industrial Machinery Systems Co., Ltd.
发明人： Yoshiyuki Sunaga , Koji Tsukada , Isao Sekiguchi , Fumio Yuasa
IPC分类号： B29C43/08 , B30B11/00 , B30B11/16 , B30B15/30
CPC分类号： B30B11/006 , B30B11/16 , B30B15/308
摘要： The quality of the briquettes granulated by a briquetting machine is improved. A briquetting machine control device samples the briquette that have been produced to measure an apparent density and a crush strength of the sampled briquette (step S10), and controls each operation set value adjusting unit (4, 6, 7) of the briquetting machine so that the actual measurement values come closer to predefined briquette quality target values (step S20 to step S60).
摘要翻译：由压块机造粒的团块的质量得到改善。压块机控制装置对已经生产的压块进行取样以测量取样的团块的表观密度和压碎强度（步骤S10），并且控制压块机的每个操作设定值调节单元（4,6,7）实际测量值接近预定义的团块质量目标值（步骤S20至步骤S60）。

10. 发明申请

US20130249573A1 ELECTRICAL RESISTANCE MEASUREMENT APPARATUS AND ELECTRICAL RESISTANCE MEASUREMENT METHOD 有权
标题翻译：电阻测量装置和电阻测量方法
公开(公告)号：US20130249573A1
公开(公告)日：2013-09-26
申请号：US13786825
申请日：2013-03-06
申请人： FURUKAWA CO., LTD.
发明人： Akihide Hamano
IPC分类号： G01R27/02
CPC分类号： G01R27/02 , G01N21/3581
摘要： An electrical resistance measurement apparatus includes a light irradiation unit that irradiates a conductive thin film with terahertz light, a reflection light detection unit that detects reflection light from the conductive thin film, and a computer containing a storage that stores correlation between the reflectance of the terahertz light from the conductive thin film and electrical resistance of the conductive thin film. The computer further containing a processor that determines, reflectance of the terahertz light from the conductive thin film based on a result of detection performed by the reflection light detection unit, and determines the electrical resistance of the conductive thin film based on the correlation and a result of the determination of the reflectance.
摘要翻译：一种电阻测量装置，包括用太赫兹光照射导电薄膜的光照射单元，检测来自导电薄膜的反射光的反射光检测单元和包含存储器的计算机，该存储器存储太赫兹的反射率之间的相关性导电薄膜的光和导电薄膜的电阻。计算机还包含基于由反射光检测单元执行的检测结果确定来自导电薄膜的太赫兹光的反射率的处理器，并且基于相关性确定导电薄膜的电阻，并且结果的反射率的确定。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式