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1. 发明授权

US09059222B2 Washing device and method for fabricating the same 有权
标题翻译：洗涤装置及其制造方法
公开(公告)号：US09059222B2
公开(公告)日：2015-06-16
申请号：US12318289
申请日：2008-12-24
申请人： Tae Young Oh , Geon Yong Kim , Eun Ha Lee
发明人： Tae Young Oh , Geon Yong Kim , Eun Ha Lee
IPC分类号： B08B3/12 , H01L21/677 , H01L21/67 , B08B3/00 , B08B5/02 , H01L21/02
CPC分类号： H01L21/67051 , B08B3/003 , B08B3/12 , B08B5/023 , B22F2998/00 , H01L21/02054 , H01L21/02057 , H01L21/0206 , H01L21/02096 , B22F5/10
摘要： The present invention relates a washing device and a method for fabricating the same which has good chemical resistance and can prevent a scratch from forming on a substrate. The washing device includes a substrate entry guide for making a substrate to enter in a right direction from an outside of the washing device, a foreign matter removal unit for receiving the substrate from the substrate entry guide unit and removing foreign matters from the substrate, a foreign matter washing unit for receiving the substrate from the foreign matter removal unit and washing remained foreign matters from the substrate, and a position control unit for controlling a position of the substrate moving out of the foreign matter washing unit, wherein the substrate entry guide, the foreign matter removal unit, the foreign matter washing unit, and the position control unit are formed of metallic porous material.
摘要翻译：本发明涉及一种清洗装置及其制造方法，该清洗装置及其制造方法具有良好的耐化学性，并可防止在基板上形成划痕。洗涤装置包括用于使基板从洗涤装置的外部向右方向进入的基板进入引导件，用于从基板入口引导单元接收基板并从基板除去异物的异物去除单元，用于从异物去除单元接收衬底的异物洗涤单元和从衬底洗涤的异物保持异物;以及位置控制单元，用于控制移出异物洗涤单元的衬底的位置，其中衬底进入引导件，异物去除单元，异物清洗单元和位置控制单元由金属多孔材料形成。

2. 发明授权

US08426852B2 Transistors and electronic apparatuses including same 有权
标题翻译：晶体管及其电子设备
公开(公告)号：US08426852B2
公开(公告)日：2013-04-23
申请号：US12923089
申请日：2010-09-01
申请人： Jae-cheol Lee , Chang-seung Lee , Jae-gwan Chung , Eun-ha Lee , Anass Benayad , Sang-wook Kim , Se-jung Oh
发明人： Jae-cheol Lee , Chang-seung Lee , Jae-gwan Chung , Eun-ha Lee , Anass Benayad , Sang-wook Kim , Se-jung Oh
IPC分类号： H01L29/12
CPC分类号： H01L29/78606 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.
摘要翻译：提供了包括它们的晶体管和电子设备，晶体管包括在衬底上的沟道层。沟道层包括含锌（Zn）的氧化物。晶体管分别包括与沟道层的相对端接触的源极和漏极，对应于沟道层的栅极以及将沟道层与栅极绝缘的栅极绝缘层。沟道层具有与基板相邻的第一表面，与第一表面相对的第二表面和在第二表面上的沟道层保护部分。沟道层保护部分包括氟化物材料。

3. 发明授权

US08300851B2 Method of managing sound source and apparatus therefor 有权
标题翻译：管理声源及其设备的方法
公开(公告)号：US08300851B2
公开(公告)日：2012-10-30
申请号：US11270476
申请日：2005-11-10
申请人： Jung-eun Shin , Eun-ha Lee
发明人： Jung-eun Shin , Eun-ha Lee
IPC分类号： H04B1/00
CPC分类号： G10H1/361 , G10H1/0008 , G10H1/22 , G10H1/46 , G10H2210/056 , G10H2220/106
摘要： A method of managing a sound source in a digital AV device and an apparatus thereof are provided. The method of managing a sound source in a digital AV device includes: extracting at least one sound source from sound being reproduced through the digital AV device; mapping an image to the extracted sound source; and managing the sound sources by using the mapped image. In addition, preferably, the extracted sound source is registered, changed, deleted, selectively reproduced, or selectively deleted by using the image. Accordingly, sound being output can be visually managed by handling the sound sources separately, a desired sound source can be selectively reproduced or removed such that utilization of the digital AV device can be enhanced.
摘要翻译：提供一种管理数字AV设备中的声源的方法及其装置。在数字AV设备中管理声源的方法包括：从通过数字AV设备再现的声音提取至少一个声源; 将图像映射到提取的声源; 并通过使用映射图像管理声源。此外，优选地，通过使用图像来注册，改变，删除，选择性地再现或选择性地删除所提取的声源。因此，可以通过单独处理声源来视觉地管理输出的声音，可以选择性地再现或去除期望的声源，从而可以提高数字AV设备的利用。

4. 发明授权

US08294198B2 Semiconductor integrated circuit device and method of fabricating the same 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US08294198B2
公开(公告)日：2012-10-23
申请号：US12704312
申请日：2010-02-11
申请人： Dong-Chul Yoo , Eun-Ha Lee , Byong-Ju Kim , Hyung-Ik Lee , Sung Heo , Han-Mei Choi , Chan-Hee Park , Ki-Hyun Hwang
发明人： Dong-Chul Yoo , Eun-Ha Lee , Byong-Ju Kim , Hyung-Ik Lee , Sung Heo , Han-Mei Choi , Chan-Hee Park , Ki-Hyun Hwang
IPC分类号： H01L29/72
CPC分类号： H01L29/792 , H01L21/7605 , H01L21/7607 , H01L21/76224 , H01L27/11565 , H01L27/11568 , H01L29/4234
摘要： A semiconductor integrated circuit device is provided. The semiconductor integrated circuit device includes a plurality of isolation regions which are formed within a semiconductor substrate and define active regions. A tunnel layer and a trap seed layer are formed in each of the active regions and are sequentially stacked between the isolation regions. A trap layer is formed on the trap seed layer and protrudes further than a top surface of each of the isolation regions. A blocking layer is formed on the trap layer. A gate electrode is formed on the blocking layer.
摘要翻译：提供了一种半导体集成电路器件。半导体集成电路器件包括形成在半导体衬底内并限定有源区的多个隔离区。在每个有源区域中形成隧道层和陷阱种子层，并且依次堆叠在隔离区域之间。陷阱层形成在捕获种子层上并且比每个隔离区的顶表面更突出。在捕获层上形成阻挡层。在阻挡层上形成栅电极。

5. 发明授权

US08043952B2 Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the same 有权
标题翻译：形成氧化铝层的方法和使用其制造电荷陷阱存储器件的方法
公开(公告)号：US08043952B2
公开(公告)日：2011-10-25
申请号：US12153655
申请日：2008-05-22
申请人： Sang-moo Choi , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Eun-ha Lee , Jung-hun Sung
发明人： Sang-moo Choi , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Eun-ha Lee , Jung-hun Sung
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/8242 , H01L29/788
CPC分类号： H01L21/28282 , H01L21/02178 , H01L21/02263 , H01L21/02356 , H01L21/02362 , H01L21/31604 , H01L21/3162
摘要： Provided is a method of forming an aluminum oxide layer and a method of manufacturing a charge trap memory device using the same. The method of forming an aluminum oxide layer may include forming an amorphous aluminum oxide layer on an underlying layer, forming a crystalline auxiliary layer on the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer. Forming the crystalline auxiliary layer may include forming an amorphous auxiliary layer on the amorphous aluminum oxide layer; and crystallizing the amorphous auxiliary layer.
摘要翻译：提供一种形成氧化铝层的方法以及使用其形成电荷阱存储器件的方法。形成氧化铝层的方法可以包括在下层上形成非晶态氧化铝层，在非晶态氧化铝层上形成结晶性辅助层，并使无定形氧化铝层结晶。形成结晶辅助层可以包括在无定形氧化铝层上形成非晶态辅助层; 并使无定形辅助层结晶。

6. 发明授权

US07919365B2 Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor 有权
标题翻译： ZnO薄膜结构和ZnO薄膜晶体管的制造方法以及ZnO薄膜结构和ZnO薄膜晶体管
公开(公告)号：US07919365B2
公开(公告)日：2011-04-05
申请号：US11702211
申请日：2007-02-05
申请人： Chang-Jung Kim , I-Hun Song , Dong-Hun Kang , Young-Soo Park , Eun-Ha Lee
发明人： Chang-Jung Kim , I-Hun Song , Dong-Hun Kang , Young-Soo Park , Eun-Ha Lee
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L21/02381 , H01L21/02422 , H01L21/02554 , H01L21/02631 , H01L29/45 , H01L29/78618
摘要： Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.
摘要翻译：提供了制造ZnO薄膜结构和ZnO薄膜晶体管（TFT）的方法，以及ZnO薄膜结构和ZnO薄膜晶体管。制造ZnO薄膜结构的方法可以包括在氧气氛中在衬底上形成ZnO薄膜，在ZnO薄膜上形成对氧具有亲和性的金属的氧扩散层，并加热ZnO薄膜和氧扩散层将ZnO薄膜的氧气扩散到氧扩散层中。

7. 发明申请

US20100071728A1 Washing device and method for fabricating the same 有权
标题翻译：洗涤装置及其制造方法
公开(公告)号：US20100071728A1
公开(公告)日：2010-03-25
申请号：US12318289
申请日：2008-12-24
申请人： Tae Young Oh , Geon Yong Kim , Eun Ha Lee
发明人： Tae Young Oh , Geon Yong Kim , Eun Ha Lee
IPC分类号： B08B3/04 , B22F3/02
CPC分类号： H01L21/67051 , B08B3/003 , B08B3/12 , B08B5/023 , B22F2998/00 , H01L21/02054 , H01L21/02057 , H01L21/0206 , H01L21/02096 , B22F5/10
摘要： The present invention relates a washing device and a method for fabricating the same which has good chemical resistance and can prevent a scratch from forming on a substrate. The washing device includes a substrate entry guide for making a substrate to enter in a right direction from an outside of the washing device, a foreign matter removal unit for receiving the substrate from the substrate entry guide unit and removing foreign matters from the substrate, a foreign matter washing unit for receiving the substrate from the foreign matter removal unit and washing remained foreign matters from the substrate, and a position control unit for controlling a position of the substrate moving out of the foreign matter washing unit, wherein the substrate entry guide, the foreign matter removal unit, the foreign matter washing unit, and the position control unit are formed of metallic porous material.
摘要翻译：本发明涉及一种清洗装置及其制造方法，该清洗装置及其制造方法具有良好的耐化学性，并可防止在基板上形成划痕。洗涤装置包括用于使基板从洗涤装置的外部向右方向进入的基板进入引导件，用于从基板入口引导单元接收基板并从基板除去异物的异物去除单元，用于从异物去除单元接收衬底的异物洗涤单元和从衬底洗涤的异物保持异物;以及位置控制单元，用于控制移出异物洗涤单元的衬底的位置，其中衬底进入引导件，异物去除单元，异物清洗单元和位置控制单元由金属多孔材料形成。

8. 发明申请

US20080265310A1 NANO REGION EMBEDDED DIELECTRIC LAYERS, MEMORY DEVICES INCLUDING THE LAYERS, AND METHODS OF MAKING THE SAME 失效
标题翻译：纳米地区嵌入式电介质层，包括层的记忆体及其制造方法
公开(公告)号：US20080265310A1
公开(公告)日：2008-10-30
申请号：US12111239
申请日：2008-04-29
申请人： Sun-Jung Kim , Young-Sun Kim , Se-Hoon Oh , Eun-Ha Lee , Young-Su Chung
发明人： Sun-Jung Kim , Young-Sun Kim , Se-Hoon Oh , Eun-Ha Lee , Young-Su Chung
IPC分类号： H01L29/51 , H01L29/792 , H01L21/28
CPC分类号： H01L29/42332 , H01L21/28185 , H01L21/28194 , H01L21/28273 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/7881 , H01L29/792
摘要： In one aspect, a memory cell includes a plurality of dielectric layers located within a charge storage gate structure. At least one of the dielectric layers includes an dielectric material including oxygen, and nano regions including oxygen embedded in the dielectric material, where an oxygen concentration of the dielectric material is the greater than an oxygen concentration of the nano regions. In another aspect, at least one of the dielectric layers includes a dielectric material and nano regions embedded in the dielectric material, where an atomic composition of the dielectric material is the same as the atomic composition of the nano regions, and a density of the dielectric material is the greater than a density of the nano regions.
摘要翻译：在一个方面，存储单元包括位于电荷存储栅极结构内的多个电介质层。电介质层中的至少一个包括包含氧的介电材料和包含在介电材料中的氧的纳米区域，其中电介质材料的氧浓度大于纳米区域的氧浓度。另一方面，电介质层中的至少一个包括介电材料和嵌入电介质材料中的纳米区域，其中介电材料的原子组成与纳米区域的原子组成相同，并且电介质的密度材料大于纳米区域的密度。

9. 发明申请

US20080258140A1 Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor 有权
标题翻译：薄膜晶体管包括选择性结晶的沟道层和制造薄膜晶体管的方法
公开(公告)号：US20080258140A1
公开(公告)日：2008-10-23
申请号：US11978581
申请日：2007-10-30
申请人： Eun-ha Lee , Dong-hun Kang , Jae-cheol Lee , Chang-jung Kim , Hyuck Lim
发明人： Eun-ha Lee , Dong-hun Kang , Jae-cheol Lee , Chang-jung Kim , Hyuck Lim
IPC分类号： H01L29/04 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02667 , H01L21/02672 , H01L21/02675
摘要： Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.
摘要翻译：提供了包括选择性晶化的沟道层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括栅极，沟道层，源极和漏极。沟道层由氧化物半导体形成，并且与源极和漏极接触的沟道层的至少一部分结晶。在制造TFT的方法中，沟道层由氧化物半导体形成，并且将金属成分注入到沟道层中，以便使与沟道层和漏极接触的沟道层的至少一部分结晶。可以通过沉积和热处理金属层或通过离子注入将金属成分注入到沟道层中。

10. 发明申请

US20070252292A1 Mold unit for manufacturing plastic edged glass shelf, method for manufacturing plastic edged glass shelf using the same, and plastic edged glass shelf manufactured thereby 审中-公开
标题翻译：用于制造塑料边缘玻璃架的模具单元，使用其制造塑料边缘玻璃架的方法，以及由此制造的塑料边缘玻璃架
公开(公告)号：US20070252292A1
公开(公告)日：2007-11-01
申请号：US11699492
申请日：2007-01-30
申请人： Sang Keun Choi , Tae Ho Joo , Jong Hoon Oh , Eun Ha Lee , Hyoung Min Go
发明人： Sang Keun Choi , Tae Ho Joo , Jong Hoon Oh , Eun Ha Lee , Hyoung Min Go
IPC分类号： B29D11/00 , A23G1/22 , B29C69/00
CPC分类号： B29C45/14434 , B29C45/14065
摘要： A mold unit manufacturing a plastic edged glass shelf includes a first mold including a first support frame forming groove; a second mold including a second support frame forming groove; a support frame forming portion formed by the first and second support frame forming grooves; a seating portion receiving a glass sheet; and support pins formed in the support frame forming portion forming the edge of the glass sheet.
摘要翻译：制造塑料边玻璃架的模具单元包括：第一模具，包括第一支撑框架形成槽; 第二模具，包括第二支撑框架形成槽; 由所述第一和第二支撑框架形成槽形成的支撑框架形成部分; 容纳玻璃板的座位部; 以及形成在形成玻璃板的边缘的支撑框架形成部分中的支撑销。

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