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    • 1. 发明授权
    • Capped wafer method and apparatus
    • 带盖的晶圆方法和装置
    • US07981723B2
    • 2011-07-19
    • US12268605
    • 2008-11-11
    • Xue'en YangMilind BhagavatErik Tarvin
    • Xue'en YangMilind BhagavatErik Tarvin
    • H01L21/44H01L21/48H01L21/50
    • B81C1/00873B81C1/00269B81C2203/0118B81C2203/019H01L23/10H01L2924/16235
    • A capped wafer includes a device wafer and an opposing cap wafer with an annular glass frit disposed between the device wafer and the cap wafer. The glass frit and the opposing wafers define a sealed volume that encloses the capped devices, and the glass frit may support the wafer cap during removal of excess wafer cap material from the capped wafer. A method of fabricating a capped wafer includes fabricating an annular intermediate layer between a device wafer and a cap wafer. In an alternate embodiment, a plurality of unsingulated dice each contains bond pads along a single edge and are arranged on a device wafer in an alternating order so that the bond pads of a first die are adjacent to the bond pads of a second die. Removing excess cap wafer material involves making a first cut in the cap wafer near a first row of bond pads and a second cut near the adjacent row of bond pads, such that a strip of wafer cap material is suspended from portions of an underlying supporting member near the edge of the capped wafer, and then removing the wafer cap material suspended from the portions of the supporting glass frit using an adhesive tape.
    • 封盖晶片包括器件晶片和相对的盖晶片,其具有设置在器件晶片和盖晶片之间的环形玻璃料。 玻璃料和相对的晶片限定了封闭封盖器件的密封体积,并且玻璃料可以在从封盖晶片去除多余的晶片盖材料期间支撑晶片盖。 制造封盖晶片的方法包括在器件晶片和盖晶片之间制造环形中间层。 在替代实施例中,多个未插拔的裸片各自包含沿着单个边缘的接合焊盘,并且以交替顺序布置在器件晶片上,使得第一管芯的接合焊盘与第二管芯的接合焊盘相邻。 去除多余的盖晶片材料包括在第一排接合焊盘附近在盖晶片中进行第一切割,并且在相邻排的接合焊盘附近进行第二切割,使得晶片盖材料条从下面的支撑构件的部分悬挂 靠近加盖晶片的边缘,然后使用胶带从支撑玻璃料的部分上移除晶片盖材料。
    • 3. 发明申请
    • Capped Wafer Method and Apparatus
    • 带盖的晶圆方法和装置
    • US20100117221A1
    • 2010-05-13
    • US12268605
    • 2008-11-11
    • Xue'en YangMilind BhagavatErik Tarvin
    • Xue'en YangMilind BhagavatErik Tarvin
    • H01L23/48H01L21/02
    • B81C1/00873B81C1/00269B81C2203/0118B81C2203/019H01L23/10H01L2924/16235
    • A capped wafer includes a device wafer and an opposing cap wafer with an annular glass frit disposed between the device wafer and the cap wafer. The glass frit and the opposing wafers define a sealed volume that encloses the capped devices, and the glass frit may support the wafer cap during removal of excess wafer cap material from the capped wafer. A method of fabricating a capped wafer includes fabricating an annular intermediate layer between a device wafer and a cap wafer. In an alternate embodiment, a plurality of unsingulated dice each contains bond pads along a single edge and are arranged on a device wafer in an alternating order so that the bond pads of a first die are adjacent to the bond pads of a second die. Removing excess cap wafer material involves making a first cut in the cap wafer near a first row of bond pads and a second cut near the adjacent row of bond pads, such that a strip of wafer cap material is suspended from portions of an underlying supporting member near the edge of the capped wafer, and then removing the wafer cap material suspended from the portions of the supporting glass frit using an adhesive tape.
    • 封盖晶片包括器件晶片和相对的盖晶片,其具有设置在器件晶片和盖晶片之间的环形玻璃料。 玻璃料和相对的晶片限定了封闭封盖器件的密封体积,并且玻璃料可以在从封盖晶片去除多余的晶片盖材料期间支撑晶片盖。 制造封盖晶片的方法包括在器件晶片和盖晶片之间制造环形中间层。 在替代实施例中,多个未插拔的裸片各自包含沿着单个边缘的接合焊盘,并且以交替顺序布置在器件晶片上,使得第一管芯的接合焊盘与第二管芯的接合焊盘相邻。 去除多余的盖晶片材料包括在第一排接合焊盘附近在盖晶片中进行第一切割,并且在相邻排的接合焊盘附近进行第二切割,使得晶片盖材料条从下面的支撑构件的部分悬挂 靠近加盖晶片的边缘,然后使用胶带从支撑玻璃料的部分上移除晶片盖材料。