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1. 发明授权

US07981723B2 Capped wafer method and apparatus 有权
标题翻译：带盖的晶圆方法和装置
公开(公告)号：US07981723B2
公开(公告)日：2011-07-19
申请号：US12268605
申请日：2008-11-11
申请人： Xue'en Yang , Milind Bhagavat , Erik Tarvin
发明人： Xue'en Yang , Milind Bhagavat , Erik Tarvin
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： B81C1/00873 , B81C1/00269 , B81C2203/0118 , B81C2203/019 , H01L23/10 , H01L2924/16235
摘要： A capped wafer includes a device wafer and an opposing cap wafer with an annular glass frit disposed between the device wafer and the cap wafer. The glass frit and the opposing wafers define a sealed volume that encloses the capped devices, and the glass frit may support the wafer cap during removal of excess wafer cap material from the capped wafer. A method of fabricating a capped wafer includes fabricating an annular intermediate layer between a device wafer and a cap wafer. In an alternate embodiment, a plurality of unsingulated dice each contains bond pads along a single edge and are arranged on a device wafer in an alternating order so that the bond pads of a first die are adjacent to the bond pads of a second die. Removing excess cap wafer material involves making a first cut in the cap wafer near a first row of bond pads and a second cut near the adjacent row of bond pads, such that a strip of wafer cap material is suspended from portions of an underlying supporting member near the edge of the capped wafer, and then removing the wafer cap material suspended from the portions of the supporting glass frit using an adhesive tape.
摘要翻译：封盖晶片包括器件晶片和相对的盖晶片，其具有设置在器件晶片和盖晶片之间的环形玻璃料。玻璃料和相对的晶片限定了封闭封盖器件的密封体积，并且玻璃料可以在从封盖晶片去除多余的晶片盖材料期间支撑晶片盖。制造封盖晶片的方法包括在器件晶片和盖晶片之间制造环形中间层。在替代实施例中，多个未插拔的裸片各自包含沿着单个边缘的接合焊盘，并且以交替顺序布置在器件晶片上，使得第一管芯的接合焊盘与第二管芯的接合焊盘相邻。去除多余的盖晶片材料包括在第一排接合焊盘附近在盖晶片中进行第一切割，并且在相邻排的接合焊盘附近进行第二切割，使得晶片盖材料条从下面的支撑构件的部分悬挂靠近加盖晶片的边缘，然后使用胶带从支撑玻璃料的部分上移除晶片盖材料。

2. 发明授权

US08058144B2 Method for capping a MEMS wafer 有权
标题翻译：封装MEMS晶圆的方法
公开(公告)号：US08058144B2
公开(公告)日：2011-11-15
申请号：US12468185
申请日：2009-05-19
申请人： Milind Bhagavat , Erik Tarvin , Firas Sammoura , Kuang Yang , Andrew Sparks
发明人： Milind Bhagavat , Erik Tarvin , Firas Sammoura , Kuang Yang , Andrew Sparks
IPC分类号： H01L21/46 , C03B29/00
CPC分类号： H01L23/10 , B81C1/00269 , B81C1/00293 , B81C2203/0109 , H01L2924/0002 , H01L2924/00
摘要： A method for capping a MEMS wafer to form a hermetically sealed device. The method includes applying a glass bonding agent to the cap wafer and burning off organic material in the glass bonding agent. The cap wafer/glass bonding agent combination is then cleaned to reduce lead in the combination. The cleaning is preferably accomplished using an oxygen plasma. The MEMS device is coated with a WASA agent. The cap wafer is then bonded to the MEMS wafer by heating this combination in a capping gas atmosphere of hydrogen molecules in a gas such as nitrogen, argon or neon. This method of capping the MEMS wafer can reduce stiction in the MEMS device.
摘要翻译：一种用于封装MEMS晶片以形成密封装置的方法。该方法包括将玻璃粘合剂施加到盖晶片上并在玻璃粘合剂中烧掉有机材料。然后清洁盖片/玻璃粘合剂组合以减少组合中的铅。清洁优选使用氧等离子体实现。 MEMS器件涂覆有WASA试剂。然后通过在诸如氮气，氩气或氖气体中的氢分子的封盖气体气氛中加热该组合，将盖晶片结合到MEMS晶片。这种封装MEMS晶片的方法可以降低MEMS器件中的静电。

3. 发明申请

US20100117221A1 Capped Wafer Method and Apparatus 有权
标题翻译：带盖的晶圆方法和装置
公开(公告)号：US20100117221A1
公开(公告)日：2010-05-13
申请号：US12268605
申请日：2008-11-11
申请人： Xue'en Yang , Milind Bhagavat , Erik Tarvin
发明人： Xue'en Yang , Milind Bhagavat , Erik Tarvin
IPC分类号： H01L23/48 , H01L21/02
CPC分类号： B81C1/00873 , B81C1/00269 , B81C2203/0118 , B81C2203/019 , H01L23/10 , H01L2924/16235
摘要： A capped wafer includes a device wafer and an opposing cap wafer with an annular glass frit disposed between the device wafer and the cap wafer. The glass frit and the opposing wafers define a sealed volume that encloses the capped devices, and the glass frit may support the wafer cap during removal of excess wafer cap material from the capped wafer. A method of fabricating a capped wafer includes fabricating an annular intermediate layer between a device wafer and a cap wafer. In an alternate embodiment, a plurality of unsingulated dice each contains bond pads along a single edge and are arranged on a device wafer in an alternating order so that the bond pads of a first die are adjacent to the bond pads of a second die. Removing excess cap wafer material involves making a first cut in the cap wafer near a first row of bond pads and a second cut near the adjacent row of bond pads, such that a strip of wafer cap material is suspended from portions of an underlying supporting member near the edge of the capped wafer, and then removing the wafer cap material suspended from the portions of the supporting glass frit using an adhesive tape.
摘要翻译：封盖晶片包括器件晶片和相对的盖晶片，其具有设置在器件晶片和盖晶片之间的环形玻璃料。玻璃料和相对的晶片限定了封闭封盖器件的密封体积，并且玻璃料可以在从封盖晶片去除多余的晶片盖材料期间支撑晶片盖。制造封盖晶片的方法包括在器件晶片和盖晶片之间制造环形中间层。在替代实施例中，多个未插拔的裸片各自包含沿着单个边缘的接合焊盘，并且以交替顺序布置在器件晶片上，使得第一管芯的接合焊盘与第二管芯的接合焊盘相邻。去除多余的盖晶片材料包括在第一排接合焊盘附近在盖晶片中进行第一切割，并且在相邻排的接合焊盘附近进行第二切割，使得晶片盖材料条从下面的支撑构件的部分悬挂靠近加盖晶片的边缘，然后使用胶带从支撑玻璃料的部分上移除晶片盖材料。

4. 发明申请

US20090294879A1 Method for Capping a MEMS Wafer 有权
标题翻译：封装MEMS晶圆的方法
公开(公告)号：US20090294879A1
公开(公告)日：2009-12-03
申请号：US12468185
申请日：2009-05-19
申请人： Milind Bhagavat , Erik Tarvin , Firas Sammoura , Kuang Yang , Andrew Sparks
发明人： Milind Bhagavat , Erik Tarvin , Firas Sammoura , Kuang Yang , Andrew Sparks
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： H01L23/10 , B81C1/00269 , B81C1/00293 , B81C2203/0109 , H01L2924/0002 , H01L2924/00
摘要： A method for capping a MEMS wafer to form a hermetically sealed device. The method includes applying a glass bonding agent to the cap wafer and burning off organic material in the glass bonding agent. The cap wafer/glass bonding agent combination is then cleaned to reduce lead in the combination. The cleaning is preferably accomplished using an oxygen plasma. The MEMS device is coated with a WASA agent. The cap wafer is then bonded to the MEMS wafer by heating this combination in a capping gas atmosphere of hydrogen molecules in a gas such as nitrogen, argon or neon. This method of capping the MEMS wafer can reduce stiction in the MEMS device.
摘要翻译：一种用于封装MEMS晶片以形成密封装置的方法。该方法包括将玻璃粘合剂施加到盖晶片上并在玻璃粘合剂中烧掉有机材料。然后清洁盖片/玻璃粘合剂组合以减少组合中的铅。清洁优选使用氧等离子体实现。 MEMS器件涂覆有WASA试剂。然后通过在诸如氮气，氩气或氖气体中的氢分子的封盖气体气氛中加热该组合，将盖晶片结合到MEMS晶片。这种封装MEMS晶片的方法可以降低MEMS器件中的静电。

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