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1. 发明授权

US08907210B2 Semiconductor material and its application as an absorber material for solar cells 有权
标题翻译：半导体材料及其作为太阳能电池吸收材料的应用
公开(公告)号：US08907210B2
公开(公告)日：2014-12-09
申请号：US13054200
申请日：2009-07-15
申请人： Dieter Meissner , Mare Altosaar , Enn Mellikov , Jaan Raudoja , Kristi Timmo
发明人： Dieter Meissner , Mare Altosaar , Enn Mellikov , Jaan Raudoja , Kristi Timmo
IPC分类号： H01L31/0264 , H01L31/0272 , H01L27/142 , H01L29/04 , H01L31/032
CPC分类号： H01L31/0326 , Y02E10/50
摘要： This invention describes a semiconductor material of general formula (I) Me12Me21-xMe3xMe4(C11-yC2y)4, in which x stands for a numeric value from 0 to 1, and y stands for a numeric value of 0 to 1, as well as its use as an absorber material in a solar cell. The metal Mel is a metal which is selected from the metals in group 11 of the periodic table of the elements (Cu, Ag or Au). The metals Me2 and Me3 are selected from the elements of the 12th group of the periodic table of elements (Zn, Cd & Hg). The metal Me4 is a metal which is selected from the 4th main group of the periodic table of elements (C, Si, Ge, Sn and Pb). The non-metals C1 and C2 are selected from the group of chalcogenides (S, Se and Te).
摘要翻译：本发明描述了通式（I）Me12Me21-xMe3xMe4（C11-yC2y）4的半导体材料，其中x表示0至1的数值，y表示0至1的数值，以及其用作太阳能电池中的吸收材料。金属Mel是选自元素（Cu，Ag或Au）的元素周期表第11族中的金属的金属。金属Me2和Me3选自元素周期表第12族元素（Zn，Cd和Hg）的元素。金属Me4是选自元素周期表（C，Si，Ge，Sn和Pb）的第4主族的金属。非金属C1和C2选自硫族化合物（S，Se和Te）。

2. 发明授权

US06488770B1 Monocrystalline powder and monograin membrane production 有权
标题翻译：单晶粉和单晶膜生产
公开(公告)号：US06488770B1
公开(公告)日：2002-12-03
申请号：US09719036
申请日：2000-12-06
申请人： Dieter Meissner , Enn Mellikov , Mare Altosaar
发明人： Dieter Meissner , Enn Mellikov , Mare Altosaar
IPC分类号： C30B708
CPC分类号： C30B9/00 , C30B29/40 , C30B29/46 , C30B29/60
摘要： For production of monocrystalline powders there is formed a melt to which a fluxing agent is added. The melt contains the components of a semiconductor material, an example being the components of copper indium diselenide which are generally used in a stoichiometric composition. The melt is usually heated to temperatures of between 300° C. and 1000° C. Monocrystalline powder grains grow. The desired recrystallization takes place at temperatures above the melting points of the materials to be fused. Once the powder grains have the desired size, the growth is stopped by quenching. The appropriate instant of quenching as well as the appropriate temperature profile for obtaining desired powder sizes are determined by, for example, preliminary experiments. Thereafter the fluxing agent is eliminated. Monograin membranes are produced from the powders produced according to the process and are used in particular in solar cells. The process is simple and inexpensive. Powder grains of uniform size are obtained.
摘要翻译：为了生产单晶粉末，形成了熔体，添加助熔剂。熔体包含半导体材料的组分，例如通常以化学计量组成使用的二硒化铜铟的组分。熔体通常被加热至300℃至1000℃之间的温度。单晶粉末颗粒生长。所需的再结晶在高于要熔融的材料的熔点的温度下进行。一旦粉末颗粒具有所需的尺寸，则通过淬火来停止生长。通过例如初步实验来确定适当的淬火时间以及用于获得所需粉末尺寸的适当温度曲线。此后消除助熔剂。单晶膜由根据该方法生产的粉末生产并且特别用于太阳能电池中。该过程简单而便宜。获得均匀尺寸的粉末颗粒。

3. 发明申请

US20120138136A1 SEMICONDUCTOR MATERIAL AND ITS APPLICATION AS AN ABSORBER MATERIAL FOR SOLAR CELLS 有权
标题翻译：半导体材料及其作为太阳能电池的吸收材料的应用
公开(公告)号：US20120138136A1
公开(公告)日：2012-06-07
申请号：US13054200
申请日：2009-07-15
申请人： Dieter Meissner , Mare Altosaar , Enn Mellikov , Jaan Raudoja , Kristi Timmo
发明人： Dieter Meissner , Mare Altosaar , Enn Mellikov , Jaan Raudoja , Kristi Timmo
IPC分类号： H01L31/0224 , H01L31/0216 , H01L21/26 , H01L31/0264 , H01L29/04 , H01L29/12
CPC分类号： H01L31/0326 , Y02E10/50
摘要： This invention describes a semiconductor material of general formula (I) Me12Me21-xMe3xMe4(C11-yC2y)4, in which x stands for a numeric value from 0 to 1, and y stands for a numeric value of 0 to 1, as well as its use as an absorber material in a solar cell. The metal Mel is a metal which is selected from the metals in group 11 of the periodic table of the elements (Cu, Ag or Au). The metals Me2 and Me3 are selected from the elements of the 12th group of the periodic table of elements (Zn, Cd & Hg). The metal Me4 is a metal which is selected from the 4th main group of the periodic table of elements (C, Si, Ge, Sn and Pb). The non-metals C1 and C2 are selected from the group of chalcogenides (S, Se and Te).
摘要翻译：本发明描述了通式（I）Me12Me21-xMe3xMe4（C11-yC2y）4的半导体材料，其中x表示0至1的数值，y表示0至1的数值，以及其用作太阳能电池中的吸收材料。金属Mel是选自元素（Cu，Ag或Au）的元素周期表第11族中的金属的金属。金属Me2和Me3选自元素周期表第12族元素（Zn，Cd和Hg）的元素。金属Me4是选自元素周期表（C，Si，Ge，Sn和Pb）的第4主族的金属。非金属C1和C2选自硫族化合物（S，Se和Te）。

4. 发明申请

US20070189956A1 Method for producing a monocrystalline cu(in,ga)se2powder, and mono-grain membrane solar cell containing said powder 审中-公开
标题翻译：单晶Cu（in，ga）se2粉末的制造方法和含有所述粉末的单晶硅太阳能电池
公开(公告)号：US20070189956A1
公开(公告)日：2007-08-16
申请号：US10582464
申请日：2004-11-30
申请人： Volker Geyer , Mare Altosaar , Enn Mellikov , Jaan Raudoja
发明人： Volker Geyer , Mare Altosaar , Enn Mellikov , Jaan Raudoja
IPC分类号： C01B19/00 , C30B21/02 , C30B17/00 , H01L31/042 , C30B9/00 , H02N6/00 , C01B25/14 , C30B28/06 , C30B11/00
CPC分类号： H01L31/0322 , C30B9/00 , C30B9/12 , C30B29/46 , C30B29/60 , Y02E10/541 , Y02P70/521
摘要： A method for producing a powder of a Cu(In,GA)Se2 compound, including the following steps: Cu and In and/or Cu and Ga are alloyed to form a CuIn and/or CuGa alloy with a substoichiometric content of Cu; producing a powder of the CuIn and/or CuG alloy; Se and either KI or NaI are added to the powder, the mixture is heated until a melted mass is formed, in which the Cu(In,Ga)Se2 compound recrystallizes, and the powder grains to be produced simultaneously grow; and the melted mass is cooled in order to interrupt the growth of the grains. The invention also relates to a monogram membrane solar cell containing a back contact, a monogram membrane containing a powder produced by the inventive method, at least one semiconductor layer, and a front contact.
摘要翻译：制备Cu（In，GA）Se 2+化合物的粉末的方法，包括以下步骤：将Cu和In和/或Cu和Ga合金化以形成CuIn和/或CuGa合金具有亚化学计量的Cu含量; 生成CuIn和/或CuG合金的粉末; 将Se和KI或NaI加入到粉末中，将混合物加热直到形成熔融物质，其中Cu（In，Ga）Se 2重复化，粉末颗粒为同时生长; 并且熔化的质量被冷却以便中断晶粒的生长。本发明还涉及一种含有背接触的记号膜太阳能电池，含有本发明方法制造的粉末的单字膜，至少一个半导体层和前触点。

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