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    • 1. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07266036B2
    • 2007-09-04
    • US10860111
    • 2004-06-04
    • Emi HayashiKiyoto OhtaYuji Yamasaki
    • Emi HayashiKiyoto OhtaYuji Yamasaki
    • G11C8/00
    • G11C29/808G11C11/401G11C29/24
    • A semiconductor memory device is provided with a plurality of memory blocks including a plurality of word lines and a plurality of bit line pairs intersecting the individual word lines, a plurality of memory cells provided at each of intersections where the individual word lines intersect the bit line pairs, and a plurality of sense amplifiers respectively provided in correspondence with the bit line pairs. The semiconductor memory device further comprises common data bus line pairs each connected via switch transistors to the corresponding memory blocks, a read/write amplifier for performing a data read/write operation through the common data bus line pairs on the memory blocks, and an SRAM cell electrically connected via switch transistors to each common data bus line pair.
    • 半导体存储器件具有多个存储块,包括多个字线和与各个字线相交的多个位线对,多个存储单元,设置在各个字线与位线相交的每个相交处 分别对应于位线对提供的多个读出放大器。 半导体存储器件还包括通过开关晶体管连接到对应的存储块的公共数据总线线对,用于通过存储器块上的公共数据总线对执行数据读/写操作的读/写放大器,以及SRAM 单元经由开关晶体管电连接到每个公共数据总线线对。