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1. 发明授权

US06295595B1 Method and structure for accessing a reduced address space of a defective memory 有权
标题翻译：用于访问缺陷存储器的缩减地址空间的方法和结构
公开(公告)号：US06295595B1
公开(公告)日：2001-09-25
申请号：US09295934
申请日：1999-04-21
申请人： Eli Wildenberg , Gennady Goltman
发明人： Eli Wildenberg , Gennady Goltman
IPC分类号： G06F1120
CPC分类号： G11C29/76 , G11C8/10 , G11C29/88 , G11C29/883
摘要： A circuit and method for producing defect tolerant high density memory cells at a low cost is disclosed. Rather than using redundant memory cells to salvage a memory circuit having non-functional memory cells, an address mapping circuit is used to remap addresses for non-functional memory cells into addresses for functional memory cells. Specifically, if the memory array of a memory circuit includes non-functional memory cells, an address mapping scheme is selected to reduce the effective size of the memory circuit so only functional memory cells are addressed. Because redundant memory cells are not included in the memory circuit, the semiconductor area and the cost of the memory circuit is reduced.
摘要翻译：公开了一种以低成本生产缺陷耐受性高密度存储单元的电路和方法。地址映射电路不是使用冗余存储器单元来挽救具有非功能存储器单元的存储器电路，而是用于将非功能存储器单元的地址重新映射到功能存储器单元的地址中。具体来说，如果存储器电路的存储器阵列包括非功能存储单元，则选择地址映射方案以减小存储器电路的有效大小，从而仅寻址功能存储单元。由于冗余存储单元不包括在存储器电路中，所以存储电路的半导体区域和成本降低。

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