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2. 发明授权

US4070658A Ion implanted bubble propagation structure 失效
标题翻译：离子注入气泡传播结构
公开(公告)号：US4070658A
公开(公告)日：1978-01-24
申请号：US645737
申请日：1975-12-31
申请人： Edward August Giess , George Edward Keefe , Yeong Show Lin
发明人： Edward August Giess , George Edward Keefe , Yeong Show Lin
IPC分类号： G11C11/14 , G11C19/08 , H01F10/00 , H01F10/24
CPC分类号： G11C19/0816 , H01F10/24
摘要： An improved ion implanted propagation structure for movement of magnetic bubble domains in a storage medium which comprises an additional magnetic layer capable of ion implantation in combination with a bubble domain storage layer in which the bubble domains exist and are moved by the ion implanted layer in response to the reorientation of a magnetic field in the plane of the ion implanted layer. The ion implanted layer (drive layer) can be in intimate contact with the storage layer and exchange coupled thereto, or can be separated from the storage layer by a non-magnetic spacer. The ion implanted layer can comprise different geometry propagation elements and its thickness, 4.pi.M, and other magnetic properties are generally selected to provide flux matching of a charged wall in the ion implanted layer with the flux emanating from the bubble domains to be moved. The charged wall is coupled to the bubble domain by exchange coupling and/or magnetostatic coupling. SUBACKGROUND OF THE INVENTION1. Field of the InventionThis invention relates to propagation structures for moving magnetic bubble domains, and more particularly to improved ion implanted propagation structures for moving magnetic bubble domains in materials which are not easily ion implanted.2. Description of the Prior ArtThe use of ion implantation to affect the surface layer of a magnetic bubble domain material for hard bubble suppression and for propagation of domains is known in the bubble domain art. For instance, reference is made to U.S. Pat. No. 3,792,452 which discusses the alteration of magnetic anisotropy by ion implantation, and U.S. Pat. No. 3,828,329 which relates to the use of ion implanted regions as propagation elements for moving magnetic bubble domains. In addition, Wolfe et al, Applied Physics Letters, July 1974, discusses magnetic closure domains in ion implanted surfaces and the propagation of magnetic bubble domains in the material whose surface is ion implanted.Other references which relate to the provision of hard bubble suppression layers are U.S. Pat. No. 3,836,898 and Y. Hidaka et al, AIP Conference Proceedings, No. 24, p. 633, 1975. This is the proceedings of the 20th Annual Conference on Magnetism and Magnetic Materials, held at San Francisco, California, on Dec. 3-6, 1974. The first of these references describes a bubble domain structure which utilizes two garnet layers separated by a thin non-magnetic epitaxial layer. Magnetostatic coupling exists between bubble domains in the two garnet layers although these layers are not exchange coupled to one another. If desired, the top garnet layer can be ion implanted to suppress hard bubbles in that top layer. The Hidaka et al reference describes the use of a thin YIG layer having high in-plane magnetization over a bubble domain garnet material. The propagation structure is permalloy. The YIG layer acts to improve the propagation margins of the permalloy structure and is therefore a keeper layer such as that which is known in the art.Whereas ion implantation for both hard bubble domain suppression and propagation elements is known in magnetic bubble technology, certain bubble domain materials, and especially those having very small bubble domains, are not readily ion implanted. For example, many magnetic garnets which support one micron and smaller magnetic bubble domains cannot be successfully ion implanted to provide regions therein having in-plane magnetization. However, these are desirable bubble domain materials since they provide small bubble domains which are stable under varying conditions of magnetic bias field and temperature. In contrast with this, many bubble materials which are readily ion implantable have low Q factor (Q = H.sub.k /4.pi.M.sub.s) and poor temperature and bias field sensitivities. For example, Gd iron garnets are generally good for ion implantation but have Q factors close to unity, and thus bubble domains in them are quite unstable. On the other hand, Eu iron garnets have Q factors of about 3 or 4 and are often good for temperature and bias stability in very small micron bubble domain materials. However, they are extremely difficult, if not impossible, to successfully ion implant.The ability to be able to ion implant a material appears to be related to the magnetic and physical properties of the material. In particular, the material should have magnetostrictive coefficients such that ion implantation will produce an in-plane magnetic anisotropy. Furthermore, materials having low Q = H.sub.k /4.pi.M.sub.s generally are easier to implant since the uniaxial anisotropy constant K.sub.u is smaller than in materials having high Q.In order to solve this problem, Applicants have appreciated the fact that bubble propagation due to ion implanted structures occurs because the bubble domains are coupled to a charged wall created when an in-plane magnetic field is applied to the bubble material having ion implanted regions therein. As the in-plane magnetic field reorients, the charged wall moves and therefore brings the coupled bubble domain along with it. Because this is the mechanism for movement with ion implanted propagation structures, Applicants appreciated that a separate drive layer can be provided for use with bubble domain materials which are not readily implantable. Therefore, ion implanted propagation elements, such as contiguous disk shaped elements, can be provided for movement of bubble domains in these favorable (but hard-to-implant) bubble materials by using a second magnetic layer that is readily implantable. This second layer, or drive layer, can be in exchange coupling contact with the storage layer in which bubble domains exist, or can be separated from the storage layer by a non-magnetic spacer having a thickness less than that which would adversely affect the magnetic coupling between the charged wall and the coupled bubble domain.The provision of a separate drive layer of different chemical formula which is ion implantable is not suggested by the prior art, which chooses separate ion implanted magnetic layers only for hard bubble suppression. The prior art does not show or suggest the provision of an ion implantable second magnetic layer of different chemical formula (composition) than the storage layer, which is used to drive magnetic bubble domains in the storage layer. Further, it would appear that the structure of the present invention would have to operate in a magnetic bias field that is 2-3 times greater than the 4.pi.M of the driving layer in order to stabilize the size of the very small bubble domains in the storage layer. It would usually be expected that this would cause the in-plane magnetization of the ion implanted regions to be forced from that orientation to a perpendicular orientation which would in turn cause loss of the necessary magnetic properties for movement of bubble domains. However, experimentation has shown that the magnetization of the ion implanted drive layer remains in-plane even in the presence of high bias fields which are required to stabilize very small bubble domains in the associated storage layer. Thus, an operable structure is provided where, at first glance, it would have been thought that the ion implanted drive layer would not be able to retain the properties necessary for propagation of bubbles in a storage layer.Aforementioned U.S. Pat. No. 3,828,329 shows a double layer structure (FIG. 9) where ion implanted regions in layer 53 are used to drive bubble domains in layer 51. However, that teaching differs from the teaching of the present invention since the structure of the cited patent uses bubble materials which are readily ion implantable. In contrast with this, the present invention provides ion implanted propagation structures for moving magnetic bubble domains in materials which are not readily and successfully ion implanted. The storage layer in Applicants' invention is not easily and readily implantable because of the high stability of this layer. The magnetization of the bubble layer cannot be reliably and reproducibly flipped over to be in-plane.Thus, the prior art uses materials which are ion implantable and which appear to have the same chemical formula, in contrast with Applicants' invention where non-implantable materials are used as storage layers and where the chemical formula of the drive layer is different than that of the storage layer.Accordingly, it is a primary object of the present invention to provide improved ion implanted propagation structures for use with magnetic bubble domain materials which are not readily ion implantable.It is another object of the present invention to provide improved apparatus for moving magnetic bubble domains in bubble domain storage layers capable of supporting bubble domains of one micron and less.It is a further object of this invention to provide techniques for producing ion implanted propagation structures for movement of magnetic bubble domains in magnetic materials that cannot be readily ion implanted, where propagation of the bubble domains is enhanced by flux matching to a charged wall in an ion implanted layer.BRIEF SUMMARY OF THE INVENTIONPropagation of magnetic bubble domains in bubble domain materials that are not readily successfully ion implanted is achieved by providing a separate magnetic layer, termed a drive layer, which can be ion implanted. This drive layer can be in exchange coupled proximity to the bubble domain layer (storage layer) or can be separated therefrom by a non-magnetic layer. In contrast with the storage layer, the drive layer is chosen to be a magnetic material which can be readily ion implanted to provide regions having in-plane magnetization. These regions of in-plane magnetization comprise the propagation elements for movement of magnetic bubble domains therealong in the associated bubble storage layer. Propagation in this manner proceeds by application of a reorienting magnetic field in the plane of the drive layer.Applicants have discovered that propagation of bubble domains by ion implanted structures occurs through the mechanism of charged wall coupling, in which a bubble domain is coupled to a charged wall in the ion implanted drive layer. Thus, as the in-plane magnetic field reorients, the charged wall moves along the ion implanted propagation structure and pulls the coupled magnetic bubble domain therealong.In order to enhance propagation of bubble domains by ion implanted structures, flux matching should be achieved between the charged wall and the magnetic bubble domain. Thus, the ratio .phi..sub.B .phi..sub.CW, where .phi..sub.B is the magnetic flux from the bubble domain and .phi..sub.CW is the magnetic flux from the charged wall, should be between about 1 and about 10 in order to have maximum coupling and most efficient bubble propagation. The concept of charged walls for movement of magnetic bubble domains in ion implanted structures is described by G. S. Almasi et al in the AIP Conference Proceedings, No. 24, p. 630, 1975. This is the proceedings of the 20th Annual Conference on Magnetism and Magnetic Materials, held December 1974, at San Francisco, California. This paper by Almasi et al is entitled "Bubble Domain Propagation Mechanisms in Ion-Implanted Structures."In order to obtain maximum flux coupling, the thickness of the drive layer, its 4.pi.M.sub.s, etc., can be selected to provide the proper flux .sub.CW in the charged wall. Additionally, these properties in the storage layer can be suited to the drive layer, although the storage layer is usually chosen in accordance with its bubble domain properties, after which the drive layer is suitably chosen to provide a charged wall having the proper flux and to provide a drive layer that is readily ion implantable.As will be apparent to one of skill in the art, the geometries of the ion implanted propagation elements can be of numerous types, including circular disk shaped elements, diamond shaped elements, etc. Additionally, the ion implanted propagation elements can be contiguous to one another or separated from one another.These and other objects, features, and advantages will be more apparent from the following more particular description of the preferred embodiments.
摘要翻译：用于在存储介质中移动磁性气泡区域的改进的离子注入传播结构，其包括能够与其中气泡区域存在并被响应的离子注入层移动的气泡域存储层结合的离子注入的附加磁性层涉及离子注入层的平面中的磁场的重新取向。离子注入层（驱动层）可以与存储层紧密接触并与其交换耦合，或者可以通过非磁性间隔物与存储层分离。离子注入层可以包括不同的几何形状的传播元件，并且其厚度，4πM，和其它磁性能通常被选择以提供离子注入层中的带电壁的通量匹配和从要移动的气泡区域发出的流量。带电壁通过交换耦合和/或静磁耦合耦合到气泡域。

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