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    • 1. 发明授权
    • Temperature and pH-sensitive block copolymer having excellent gel strength
    • 具有优异凝胶强度的温度和pH敏感性嵌段共聚物
    • US08586087B2
    • 2013-11-19
    • US12061322
    • 2008-04-02
    • Doo Sung LeeKasala DayanandaBong Sup Kim
    • Doo Sung LeeKasala DayanandaBong Sup Kim
    • A61K9/00
    • A61K9/0024A61K47/34C08G18/3293C08G18/4277C08G18/428C08G18/73C08G2210/00C08G2230/00
    • An amphiphilic pentablock copolymer that is temperature- and pH-sensitive and has superior and sustained gel strength, includes (a) a hydrophilic triblock copolymer that is temperature-sensitive and that is a copolymer of a poly(ethylene glycol)-based compound and a biodegradable polymer that is one or more polymer selected from the group consisting of polylactide, polyglycolide, polycaprolactone, poly(caprolactone-lactide) random copolymer, poly(caprolactone-glycolide) random copolymer, poly(lactide-glycolide) random copolymer, and mixtures thereof; coupled with (b) a polyurethane-based oligomer (PU) that is pH sensitive and that includes a diisocyanate compound represented by a Formula as follows: OCN—(CH2)n—NCO, where n is an integer of 4 to 10, polymerized with a diol compound having a tertiary amine on a main chain thereof that is one or more of 1,3-bis{1-(2-hydroxyethyl) -4-pyridyl}propane and 1,4-bis(2-hydroxyethyl)piperazine, and is represented by Formulae as follows: where R and R′ are alkyl groups of 1 to 8 carbon atoms, respectively.
    • 具有温度和pH敏感性并具有优异和持续的凝胶强度的两亲性五嵌段共聚物包括(a)温度敏感的亲水性三嵌段共聚物,并且是聚(乙二醇)基化合物和 一种或多种选自聚丙交酯,聚乙交酯,聚己内酯,聚(己内酯 - 丙交酯)无规共聚物,聚(己内酯 - 乙交酯)无规共聚物,聚(丙交酯 - 乙交酯)无规共聚物及其混合物的聚合物的生物可降解聚合物 ; 与(b)pH敏感的聚氨酯类低聚物(PU)结合,并且包括由下式表示的二异氰酸酯化合物:OCN-(CH 2)n -NCO,其中n为4至10的整数,聚合 与主链上具有叔胺的二醇化合物是1,3-双{1-(2-羟乙基)-4-吡啶基}丙烷和1,4-双(2-羟乙基)哌嗪中的一种或多种 并且由式如下表示:其中R和R'分别为1-8个碳原子的烷基。
    • 2. 发明申请
    • Method for Fabricating Semiconductor Device
    • 半导体器件制造方法
    • US20100120219A1
    • 2010-05-13
    • US12582604
    • 2009-10-20
    • Doo Sung LEE
    • Doo Sung LEE
    • H01L21/762
    • H01L21/76237H01L21/26506
    • A method for fabricating a semiconductor device is disclosed. The method includes forming a first oxide film, a nitride film, and a second oxide film on a semiconductor substrate in succession, etching the second oxide film and the nitride film to form a second oxide film pattern and a nitride film pattern, exposing a portion of the first oxide film, performing at least one nitrogen implantation into the semiconductor substrate to form a nitrogen injection region under the exposed portion of the first oxide film, forming a third oxide film over the second oxide film pattern, the nitride film pattern, and the semiconductor substrate, forming a trench that is deeper than the nitrogen ion injection region by etching the semiconductor substrate using the second oxide film pattern as a mask, and filling the trench with an oxide film to form a device isolating film.
    • 公开了一种制造半导体器件的方法。 该方法包括在半导体衬底上依次形成第一氧化物膜,氮化物膜和第二氧化物膜,蚀刻第二氧化物膜和氮化物膜以形成第二氧化物膜图案和氮化物膜图案, 的第一氧化物膜,在所述第一氧化膜的暴露部分的下方,在所述半导体衬底中进行至少一个氮注入以形成氮注入区,在所述第二氧化膜图案上形成第三氧化膜,所述氮化物膜图案和 半导体衬底,通过使用第二氧化膜图案作为掩模蚀刻半导体衬底,形成比氮离子注入区更深的沟槽,并用氧化膜填充沟槽以形成器件隔离膜。
    • 3. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE DEVICE
    • 半导体器件及其制造方法
    • US20080303026A1
    • 2008-12-11
    • US12134887
    • 2008-06-06
    • Doo-Sung Lee
    • Doo-Sung Lee
    • H01L21/28H01L29/04
    • H01L21/28061H01L21/28202H01L29/4941H01L29/518
    • A semiconductor device and a method for manufacturing the same that includes forming a gate insulating film on a semiconductor substrate; and then forming a doped polysilicon layer on the gate insulating film; and then forming a first metal layer on the doped polysilicon layer; and then forming a metal silicide layer on the first metal layer. Therefore, current leakage can be reduced and generation of boron penetration can be prevented. Forming the doped polysilicon layer on the gate insulating film enables control of a work function while forming a silicide layer having a uniform surface interface is possible by depositing nickel (Ni) and polysilicon on the platinum first metal layer.
    • 一种半导体器件及其制造方法,包括在半导体衬底上形成栅极绝缘膜; 然后在栅极绝缘膜上形成掺杂多晶硅层; 然后在掺杂多晶硅层上形成第一金属层; 然后在第一金属层上形成金属硅化物层。 因此,可以减少电流泄漏,并且可以防止硼渗透的产生。 通过在铂第一金属层上沉积镍(Ni)和多晶硅,可以在栅极绝缘膜上形成掺杂多晶硅层,从而可以形成具有均匀表面界面的硅化物层的工作功能。
    • 6. 发明授权
    • pH sensitive block copolymer and polymeric micelle using the same
    • pH敏感嵌段共聚物和使用其的聚合物胶束
    • US08318204B2
    • 2012-11-27
    • US11573858
    • 2005-12-27
    • Doo Sung LeeMin Sang Kim
    • Doo Sung LeeMin Sang Kim
    • A61K9/14A61K47/00
    • C08F299/024
    • Disclosed is a pH-sensitive block copolymer obtained by copolymerization of: (a) a polyethylene glycol compound (A); and (b) at least one poly(amino acid) compound selected from the group consisting of a poly(β-amino ester) and poly(amido amine) or a copolymer thereof (B). A method for preparing the same block copolymer, and a polymer micelle type drug composition comprising the pH-sensitive block copolymer and a physiologically active substance that can be encapsulated with the block copolymer are also disclosed. The pH-sensitive block copolymer is obtained by polymerization of a hydrophilic polyethylene glycol compound with a pH-sensitive biodegradable poly(amino acid) compound. Therefore, the pH-sensitive block copolymer can form a micelle structure due to its amphiphilicity and ionization characteristics depending on pH variations, and thus can be used as drug carrier for target-directed drug delivery depending on pH variations in the body.
    • 公开了通过以下方法获得的pH敏感性嵌段共聚物:(a)聚乙二醇化合物(A); 和(b)至少一种选自聚(亚氨基酯)和聚(酰氨基胺)或其共聚物(B)的聚(氨基酸)化合物。 还公开了制备相同嵌段共聚物的方法,以及包含该pH敏感性嵌段共聚物的聚合物胶束型药物组合物和可以用嵌段共聚物包封的生理活性物质。 通过亲水性聚乙二醇化合物与pH敏感的可生物降解的聚(氨基酸)化合物的聚合获得pH敏感性嵌段共聚物。 因此,pH敏感性嵌段共聚物由于其两亲性和离子化特性而根据pH变化而形成胶束结构,因此可以根据体内的pH变化用作靶向药物递送的药物载体。
    • 8. 发明申请
    • Emergency guidance lamp system for guiding to nearest exit in the event of fire
    • 应急指导灯系统,在发生火灾时引导到最近的出口
    • US20090066522A1
    • 2009-03-12
    • US11898283
    • 2007-09-11
    • Doo Sung LeeHyun Jong KangByung Mo LeeHyo Sung Lee
    • Doo Sung LeeHyun Jong KangByung Mo LeeHyo Sung Lee
    • G08B17/00
    • G08B5/36G08B7/066
    • An emergency guidance lamp system for guiding to the nearest exit in the event of a fire is provided. A fire detection sensor is installed at a specific region such as ceilings or passages of tunnels or large buildings, and detects a fire occurrence and sends a corresponding detection signal. A central control unit receives the detection signal from the fire detection sensor, judges a situation on the fire occurrence based on simulation result data of various numbers of cases of fire occurrence that have been previously performed and stored in an internal memory, and sends red and green lighting control signals most suitable for each guidance lamp apparatus installed at the site. A guidance lamp apparatus is installed on the ceiling, wall surface, or bottom surface of a passage or the like of tunnels or large buildings, and has a red lighting unit and a green lighting unit provided at the body thereof.
    • 提供了在发生火灾时引导到最近出口的紧急指导灯系统。 火灾探测传感器安装在特定区域,如天花板或隧道或大型建筑物的通道,并检测火灾发生并发送相应的检测信号。 中央控制单元从火灾探测传感器接收检测信号,根据先前执行并存储在内部存储器中的各种数量的发生火灾的情况的模拟结果数据,判定出现火情的情况,发送红色和 绿色照明控制信号最适合安装在现场的每个引导灯装置。 引导灯装置安装在隧道或大型建筑物的通道等的天花板,墙壁或底面上,并具有设置在其主体上的红色照明单元和绿色照明单元。