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    • 2. 发明授权
    • Back lapping in-line system for semiconductor device fabrication
    • 背面研磨用于半导体器件制造的在线系统
    • US06269281B1
    • 2001-07-31
    • US09234498
    • 1999-01-21
    • Do-yun HwangJin-heung Kim
    • Do-yun HwangJin-heung Kim
    • G06F1900
    • H01L21/67276B24B7/228
    • A back lapping in-line system for semiconductor device fabrication carries out a vinyl covering, a back side grinding, and a vinyl removing for grinding the back side of a wafer in-line with one single process. The back lapping in-line system has a server connected to a network line, a program therein for controlling the in-line processes, and an in-line facility connected to the server by a standard communication line, wherein parts of the in-line facility are assembled in order, and each part carries out its corresponding process according to information communicated to and from the server, and unloads the wafer after it passes through all of the corresponding processes successively. The in-line facility uses a single loading and unloading, and needs no storage space between parts.
    • 用于半导体器件制造的背面研磨在线系统执行乙烯基覆盖物,背面研磨和乙烯基除去,用于研磨与单一工艺一起的晶片背面。 背面研磨在线系统具有连接到网络线的服务器,其中用于控制在线处理的程序,以及通过标准通信线路连接到服务器的在线设备,其中在线的部分 设备按顺序进行组装,并且每个部件根据与服务器通信的信息执行其对应的过程,并且在连续通过所有相应处理之后卸载晶​​片。 在线设备使用单个装载和卸载,并且不需要部件之间的存储空间。
    • 3. 发明授权
    • Method and apparatus for grinding wafers using a grind chuck having high elastic modulus
    • 使用具有高弹性模量的研磨卡盘研磨晶片的方法和装置
    • US06193586B1
    • 2001-02-27
    • US09228037
    • 1998-12-24
    • Bae-seung ParkJin-heung KimDo-yun Hwang
    • Bae-seung ParkJin-heung KimDo-yun Hwang
    • B24B722
    • B24B7/228B24B41/061B24B55/02
    • A method and apparatus for grinding wafers without using an ultraviolet tape attached to the front face of the wafer reduces manufacturing costs, simplifies the grinding process and protects the semiconductor chips formed on the front face of the wafer from being damaged by static electricity. The grinding apparatus uses a grind chuck formed of a soft material having a high elastic modulus and a rising groove formed in the grind chuck. Deionized water is supplied onto the wafer from a first direction. Simultaneously, deionized water or air is supplied into the rising groove of the grind chuck from a second direction opposite to the first direction. The circumferential edge of the wafer overlaps the rising groove, such that the simultaneous supply of deionized water and/or air from the two directions protects the front surface of the wafer from being contaminated by silicon dust. The soft material of the grind chuck also protects the front surface of the wafer from being damaged by pressure from the grind unit.
    • 用于研磨晶片而不使用附着在晶片正面的紫外线带的方法和装置降低了制造成本,简化了研磨工艺,并保护了晶片正面上形成的半导体芯片免受静电损伤。 研磨装置使用由具有高弹性模量的软质材料形成的研磨卡盘和形成在研磨卡盘中的上升槽。 去离子水从第一方向供应到晶片上。 同时,从与第一方向相反的第二方向将去离子水或空气供给到研磨卡盘的上升槽中。 晶片的圆周边缘与上升槽重叠,从而从两个方向同时供应去离子水和/或空气保护晶片的前表面免受硅粉污染。 研磨卡盘的软质材料还保护晶片的前表面免受来自研磨单元的压力的损坏。