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1. 发明授权

US5811018A Magnetic barrier for gap control in interleaved tape head design 失效
标题翻译：用于交错磁带头设计中的间隙控制的磁屏障
公开(公告)号：US5811018A
公开(公告)日：1998-09-22
申请号：US594851
申请日：1996-01-31
申请人： Diane C. Ewasko , James C. Cates
发明人： Diane C. Ewasko , James C. Cates
IPC分类号： G11B5/31 , G11B5/33 , G11B5/39 , B44C1/22
CPC分类号： G11B5/3967 , G11B5/332 , G11B5/314 , G11B5/3163
摘要： The present invention discloses an improved structure and method for forming an interleaved magnetic head. In one aspect, an interleaved magnetic head is formed by providing a wafer comprising a first thick magnetic layer extending across read and write segments of the head and patterned to form a first read shield and a first write pole and, in a second step, a second thick magnetic layer is formed across the read and write segments of the head at substantially the same time to provide substantially all of a second read shield and substantially all of a second write pole. A write gap between the write poles may be formed in such a manner as to have a different thickness than the read gap between the read shields. In addition, tight processing control is maintained over the critical read gap thickness.
摘要翻译：本发明公开了一种用于形成交错磁头的改进的结构和方法。在一个方面中，交错磁头通过提供晶片形成，该晶片包括延伸穿过磁头的读取和写入段的第一厚磁层，并被图案化以形成第一读取屏蔽和第一写入磁极，并且在第二步骤中，基本上相同的时间在头部的读取和写入部分之间形成第二厚的磁性层，以提供基本上所有的第二读取屏蔽和基本上所有的第二写入极。写极之间的写入间隙可以形成为具有与读屏蔽之间的读取间隙不同的厚度。此外，在关键读取间隙厚度上保持严格的处理控制。

2. 发明授权

US5784772A Method of simultaneously forming MR sensors in a dual element MR head 失效
标题翻译：在双元件MR头中同时形成MR传感器的方法
公开(公告)号：US5784772A
公开(公告)日：1998-07-28
申请号：US576814
申请日：1995-12-21
申请人： Diane C. Ewasko , James C. Cates , Richard W. Crowell , Richard H. Dee
发明人： Diane C. Ewasko , James C. Cates , Richard W. Crowell , Richard H. Dee
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： G11B5/3954 , G11B5/3903 , G11B5/3163 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The present invention discloses an improved structure and method of forming a dual magnetoresistive element head. The dual magnetoresistive element head includes a first and a second magnetoresistive element and leads extending from opposite end segments of each magnetoresistive element. In one aspect of the present invention, the first and second magnetoresistive elements and the leads are simultaneously formed from a wafer comprising a first and a second magnetic layer separated by an intermediate gap layer.
摘要翻译：本发明公开了一种形成双磁阻元件头的改进的结构和方法。双磁阻元件头包括第一和第二磁阻元件以及从每个磁阻元件的相对端部延伸的引线。在本发明的一个方面，第一和第二磁阻元件和引线同时由包括由中间间隙层隔开的第一和第二磁性层的晶片形成。

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