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标题翻译：在贵金属存在下贵金属的化学蚀刻控制方法

公开(公告)号：US20050048798A1

公开(公告)日：2005-03-03

申请号：US10653548

申请日：2003-09-02

申请人： Christo Bojkov , Diane Arbuthnot , Robert Kunesh

发明人： Christo Bojkov , Diane Arbuthnot , Robert Kunesh

IPC分类号： C23F1/18 , C23F1/30 , H01L21/3213 , H01L21/60 , H01L21/31

CPC分类号： H01L24/48 , C23F1/18 , C23F1/30 , H01L21/32134 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L2224/0401 , H01L2224/04042 , H01L2224/05083 , H01L2224/05111 , H01L2224/05116 , H01L2224/05118 , H01L2224/05123 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/1134 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/1308 , H01L2224/13084 , H01L2224/13111 , H01L2224/13116 , H01L2224/13118 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13164 , H01L2224/13169 , H01L2224/13171 , H01L2224/45014 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48739 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2924/00013 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01016 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/14 , H01L2924/3025 , H01L2924/00014 , H01L2224/13099 , H01L2924/00 , H01L2224/48744 , H01L2224/29099 , H01L2224/11901 , H01L2224/1146

摘要： A method for preparing a bonding pad on an integrated circuit wafer by the steps of depositing a conductive seed layer (104) on the bonding pad; depositing a metal layer (301, 302, and 303) over a portion of the conductive seed layer; and immersing the wafer in an etchant solution (501) to remove the portion of the seed layer not covered by the metal layer. The etchant solution contains a chelating agent that bonds ions from the seed layer. When the seed layer is copper or a refractory metal, and the metal layer is gold or palladium, the preferred chelating agent is selected from, but is not limited to, but is not limited to, the families of ethylenediaminetetraacetic acids (EDTA), 8-hydroxy-quinolines, including 8-hydroxy-quinoline-5-sulfonic acid, porphyrins, and phthalocyanines.

摘要翻译：一种通过以下步骤制备集成电路晶片上的焊盘的方法：在焊盘上沉积导电种子层（104）; 在导电种子层的一部分上沉积金属层（301,302和303）; 以及将晶片浸入蚀刻剂溶液（501）中以去除未被金属层覆盖的种子层的部分。蚀刻剂溶液含有螯合剂，其结合种子层的离子。当种子层是铜或难熔金属，并且金属层是金或钯时，优选的螯合剂选自但不限于但不限于乙二胺四乙酸（EDTA），8 - 羟基 - 喹啉，包括8-羟基 - 喹啉-5-磺酸，卟啉和酞菁。

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