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1. 发明授权

US06528409B1 Interconnect structure formed in porous dielectric material with minimized degradation and electromigration 有权
标题翻译：在多孔介电材料中形成的互连结构具有最小化的降解和电迁移
公开(公告)号：US06528409B1
公开(公告)日：2003-03-04
申请号：US10134883
申请日：2002-04-29
申请人： Sergey Lopatin , Fei Wang , Diana Schonauer , Steven C. Avanzino
发明人： Sergey Lopatin , Fei Wang , Diana Schonauer , Steven C. Avanzino
IPC分类号： H01L214763
CPC分类号： H01L21/76828 , H01L21/288 , H01L21/76805 , H01L21/76814 , H01L21/7682 , H01L21/76829 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76865 , H01L21/76867 , H01L21/76874 , H01L2221/1047 , H01L2221/1089
摘要： For fabricating an interconnect structure within an interconnect opening formed within a porous dielectric material, the interconnect opening is initially formed within a low-K precursor material that is not completely cured. The interconnect opening is then filled with a conductive fill material being contained within the interconnect opening and with a top surface of the conductive fill material within the interconnect opening being exposed. A capping material is formed on the top surface of the conductive fill material, and the capping material is an amorphous alloy or is a microcrystalline alloy having stuffed grain boundaries. A thermal curing process is then performed for curing the low-K precursor material to become a porous low-K dielectric material. The capping material on the top surface of the conductive fill material is impervious to at least one of oxygen, carbon, hydrogen, chlorine, and porogen fragments that are generated as out-gassing volatile by-products from the low-K precursor material during the thermal curing process to preserve the integrity of the interconnect structure. In another aspect for fabricating an interconnect structure, an interconnect opening is formed within a porous dielectric material with opened pores at sidewalls of the interconnect opening. A diffusion barrier material is formed at a bottom wall of the interconnect opening. The diffusion barrier material is then sputtered away from the bottom wall of the interconnect opening and onto the sidewalls of the interconnect opening to substantially fill the opened pores at the sidewalls with the diffusion barrier material. The interconnect opening is then filled with a conductive fill material after the opened pores at the sidewalls of the interconnect opening are filled with the diffusion barrier material.
摘要翻译：为了在形成在多孔电介质材料内的互连开口内制造互连结构，互连开口最初形成在未完全固化的低K前体材料内。然后用互连开口内容纳的导电填充材料填充互连开口，并且暴露互连开口内的导电填充材料的顶表面。在导电填充材料的顶表面上形成封盖材料，封盖材料是非晶合金，或是具有填充晶界的微晶合金。然后进行热固化过程，以固化低K前体材料，成为多孔低K电介质材料。在导电填充材料的顶表面上的封盖材料对于氧，碳，氢，氯和致孔剂碎片中的至少一种是不渗透的，所述氧，碳，氢，氯和致孔剂碎片作为在低K前体材料期间产生的挥发性挥发性副产物而产生热固化工艺来保持互连结构的完整性。在用于制造互连结构的另一方面中，互连开口形成在具有在互连开口的侧壁处的开孔的多孔电介质材料内。扩散阻挡材料形成在互连开口的底壁处。然后将扩散阻挡材料从互连开口的底壁溅射到互连开口的侧壁上，以基本上用扩散阻挡材料填充侧壁处的开孔。然后在互连开口的侧壁处的开放孔填充有扩散阻挡材料之后，用导电填充材料填充互连开口。

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