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1. 发明授权

US5701223A Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensor 失效
标题翻译：旋转阀磁阻传感器具有反平行钉扎层和改进的交换偏置层，以及使用传感器的磁记录系统
公开(公告)号：US5701223A
公开(公告)日：1997-12-23
申请号：US697396
申请日：1996-08-23
申请人： Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Tsann Lin , Virgil Simon Speriosu , Ching Hwa Tsang , Dennis Richard Wilhoit
发明人： Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Tsann Lin , Virgil Simon Speriosu , Ching Hwa Tsang , Dennis Richard Wilhoit
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01L43/10
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3272 , H01L43/10 , G11B2005/3996
摘要： A spin valve magnetoresistive (SVMR) sensor uses a laminated antiparallel (AP) pinned layer in combination with an improved antiferromagnetic (AF) exchange biasing layer. The pinned layer comprises two ferromagnetic films separated by a nonmagnetic coupling film such that the magnetizations of the two ferromagnetic films are strongly coupled together antiferromagnetically in an antiparallel orientation. This laminated AP pinned layer is magnetically rigid in the small field excitations required to rotate the SVMR sensor's free layer. When the magnetic moments of the two ferromagnetic layers in this AP pinned layer are nearly the same, the net magnetic moment of the pinned layer is small. However, the exchange field is correspondingly large because it is inversely proportional to the net magnetic moment. The laminated AP pinned layer has its magnetization fixed or pinned by an AF material that is highly corrosion resistant but that has an exchange anisotropy too low to be usable in conventional SVMR sensors. In the preferred embodiment the AF layer is nickel-oxide and is formed on one of the magnetoresistive (MR) shields that serves as the substrate. Thus the AF material also serves as the insulating MR gap material. The location of the AF layer and the laminated AP-pinned layer to which it is exchange coupled on the bottom of the SVMR sensor allows for improved longitudinal biasing of the free layer when the SVMR sensor is fabricated.
摘要翻译：自旋阀磁阻（SVMR）传感器使用层叠反平行（AP）钉扎层与改进的反铁磁（AF）交换偏置层组合。被钉扎层包括由非磁性耦合膜分离的两个铁磁膜，使得两个铁磁膜的磁化强烈耦合在反铁磁反向反平行取向。该层压AP钉扎层在旋转SVMR传感器自由层所需的小场激励中是磁性刚性的。当该AP钉扎层中的两个铁磁层的磁矩几乎相同时，被钉扎层的净磁矩小。然而，交换场相当大，因为它与净磁矩成反比。层压的AP钉扎层的磁化固定或由AF材料固定，该材料具有高度耐腐蚀性，但具有太低的交换各向异性，无法在传统的SVMR传感器中使用。在优选实施例中，AF层是氧化镍，并且形成在用作衬底的磁阻（MR）屏蔽之一上。因此，AF材料也用作绝缘MR间隙材料。在SVMR传感器的底部上交换耦合的AF层和层压的AP钉扎层的位置允许在制造SVMR传感器时改善自由层的纵向偏置。

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