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1. 发明申请

US20130021115A1 RESONATED BYPASS CAPACITOR FOR ENHANCED PERFORMANCE OF A MICROWAVE CIRCUIT 有权
标题翻译：用于增强微波电路性能的共振旁路电容器
公开(公告)号：US20130021115A1
公开(公告)日：2013-01-24
申请号：US13185053
申请日：2011-07-18
申请人： Jon Mooney , David D. Heston , Claire E. Mooney , Tiffany E. Cassidy
发明人： Jon Mooney , David D. Heston , Claire E. Mooney , Tiffany E. Cassidy
IPC分类号： H03H7/01 , H05K3/10 , H03H3/00
CPC分类号： H03F3/195 , H01L23/66 , H01L2223/665 , H01L2223/6683 , H01L2924/0002 , H03F1/42 , H03F3/191 , Y10T29/49117 , Y10T29/49155 , H01L2924/00
摘要： The present invention relates to microwave circuits, and more particularly to bypass circuits for bias connections. The bypass circuit comprises a capacitor in series with an inductor, the series combination being connected between the bias conductor and ground. This series combination provides low return loss at the operating frequency. A de-queueing circuit may be included in the bypass circuit to provide loss at other frequencies.
摘要翻译：本发明涉及微波电路，更具体地涉及用于偏置连接的旁路电路。旁路电路包括与电感器串联的电容器，串联组合连接在偏置导体和地之间。该系列组合在工作频率下提供低回波损耗。旁路电路中可能包括一个排队电路，以提供其他频率的损耗。

2. 发明授权

US07884442B2 Integrated circuit resistor 有权
标题翻译：集成电路电阻
公开(公告)号：US07884442B2
公开(公告)日：2011-02-08
申请号：US11678732
申请日：2007-02-26
申请人： David D. Heston , Jon E. Mooney
发明人： David D. Heston , Jon E. Mooney
IPC分类号： H01L29/00
CPC分类号： H01L27/0605 , H01L27/0802
摘要： An integrated circuit resistor is provided that comprises a mesa 14 between electrical contacts 16 and 18. The electrical resistance between electrical contacts 16 and 18 is selectively increased through the formation of recesses 20 and 22 in the mesa 14. The size of recesses 20and 22 can be used to tune the value of the electrical resistance between contacts 16 and 18.
摘要翻译：提供了一种集成电路电阻器，其包括电触点16和18之间的台面14.电触头16和18之间的电阻通过在台面14中形成凹部20和22而选择性地增加。凹部20和22的尺寸可以用于调节触点16和18之间的电阻值。

3. 发明授权

US07095285B1 Method and system for biasing power amplifiers with kink anomaly 有权
标题翻译：具有扭结异常的功率放大器的偏置方法和系统
公开(公告)号：US07095285B1
公开(公告)日：2006-08-22
申请号：US10901416
申请日：2004-07-26
申请人： David D. Heston , John G. Heston , Brian P. Helm , Gordon R. Scott , Scott Mitchel Heston , David R. Fletcher , William S. Kopp
发明人： David D. Heston , John G. Heston , Brian P. Helm , Gordon R. Scott , Scott Mitchel Heston , David R. Fletcher , William S. Kopp
IPC分类号： H03F3/04
CPC分类号： H03F3/189 , H03F1/30
摘要： According to one embodiment of the present invention a method for biasing a power amplifier having at least one transistor exhibiting kink anomaly includes providing a bias circuit coupled to a gate of at least one transistor of the power amplifier. The method also includes providing, by the bias circuit, a bias voltage to the gate. The bias circuit has a load characteristic that intersects a current versus gate voltage curve for the gate at a frequency of operation of the power amplifier only once and that exhibits a low impedance at the intersection of the load characteristic with the current versus gate curve of the gate.
摘要翻译：根据本发明的一个实施例，用于偏置具有至少一个呈现扭结异常的晶体管的功率放大器的方法包括提供耦合到功率放大器的至少一个晶体管的栅极的偏置电路。该方法还包括通过偏置电路向栅极提供偏置电压。偏置电路具有与功率放大器工作频率下的栅极的电流对栅极电压曲线相交的负载特性，并且在负载特性与电流对栅极曲线的交点处呈现低阻抗门。

4. 发明授权

US07385456B2 Power absorber system and method 有权
标题翻译：功率吸收系统及方法
公开(公告)号：US07385456B2
公开(公告)日：2008-06-10
申请号：US11129262
申请日：2005-05-12
申请人： David D. Heston , John G. Heston , Thomas L. Middlebrook, III
发明人： David D. Heston , John G. Heston , Thomas L. Middlebrook, III
IPC分类号： H01P1/22
CPC分类号： H03G11/025
摘要： According to one embodiment of the invention, a power absorber for receiving a signal having a fundamental frequency includes an input node for receiving the signal and a first PIN diode circuit having a first end electrically connected at the input node and a second end. The first PIN diode circuit includes at least one PIN diode. The absorber also includes a load resistance having a first end electrically connected to the second end of the PIN diode circuit and a second end electrically connected to a reference voltage. The absorber also includes a quarter wave transmission line having a first end electrically connected to the input node at a second end. The quarter wave transmission line has an electrical link that is one quarter of the wavelength of the fundamental frequency. The power absorber also includes a second PIN diode circuit having an input electrically connected to the second end of the quarter wave transmission line and an output electrically connected to the reference voltage. The first choke is provided in parallel with the load resistor.
摘要翻译：根据本发明的一个实施例，用于接收具有基频的信号的功率吸收器包括用于接收信号的输入节点和具有在输入节点处电连接的第一端和第二端的第一PIN二极管电路。第一PIN二极管电路包括至少一个PIN二极管。吸收器还包括负载电阻，其具有电连接到PIN二极管电路的第二端的第一端和电连接到参考电压的第二端。吸收器还包括四分之一波长传输线，其具有在第二端电连接到输入节点的第一端。四分之一波长传输线具有基频的四分之一的电连接。功率吸收器还包括第二PIN二极管电路，其具有电连接到四分之一波长传输线的第二端的输入端和与参考电压电连接的输出。第一个扼流圈与负载电阻并联提供。

5. 发明授权

US5047829A Monolithic p-i-n diode limiter 失效
标题翻译：单片p-i-n二极管限幅器
公开(公告)号：US5047829A
公开(公告)日：1991-09-10
申请号：US924948
申请日：1986-10-30
申请人： David J. Seymour , David D. Heston , Randall E. Lehmann
发明人： David J. Seymour , David D. Heston , Randall E. Lehmann
IPC分类号： H01L29/861 , H01L21/768 , H01L23/48 , H01L23/482 , H01L23/532 , H01L27/08 , H01P3/08 , H03G11/00 , H03G11/02
CPC分类号： H01L23/53242 , H01L21/76898 , H01L23/481 , H01L23/4827 , H01L27/0814 , H01L2224/48091 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01014 , H01L2924/01079 , H01L2924/12036 , H01L2924/13063 , H01L2924/14 , H01L2924/1423 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011
摘要： Monolithic gallium arsenide limiters (30) formed of p-i-n diodes (32, 34) that are distributed devices between conductors of coplanar waveguide sections (40, 42, 44) are disclosed. The diode doped regions underlie the coplanar conductors and the diode intrinsic region underlies the coplanar waveguide gap. The grounded coplanar segments connect to a backside ground through vias (74).
摘要翻译：公开了由共面波导部分（40,42,44）的导体之间的分布式器件的p-i-n二极管（32,34）形成的单片砷化镓限制器（30）。二极管掺杂区域位于共面导体之下，二极管本征区域位于共面波导间隙的下面。接地的共面段通过通孔（74）连接到背面的地面。

6. 发明申请

US20120309327A1 RF AMPLIFIER WITH OPEN CIRCUIT INPUT OFF-STATE 审中-公开
标题翻译：射频放大器，带开路电路输入状态
公开(公告)号：US20120309327A1
公开(公告)日：2012-12-06
申请号：US13149618
申请日：2011-05-31
申请人： Bryan Fast , Michael G. Hawkins , David D. Heston , Brian P. Helm
发明人： Bryan Fast , Michael G. Hawkins , David D. Heston , Brian P. Helm
IPC分类号： H04B1/44 , H03F3/16 , H03F3/04 , H04B1/40
CPC分类号： H03F3/72 , H03F1/56 , H03F3/193
摘要： An amplifier including an amplifier transistor, and a switch transistor, wherein the amplifier is configured to be switched on and off by controlling bias voltages of the transistors.
摘要翻译：一种放大器，包括放大器晶体管和开关晶体管，其中放大器被配置为通过控制晶体管的偏置电压来接通和关断。

7. 发明授权

US06774701B1 Method and apparatus for electronic switching with low insertion loss and high isolation 失效
标题翻译：具有低插入损耗和高隔离度的电子开关方法和装置
公开(公告)号：US06774701B1
公开(公告)日：2004-08-10
申请号：US10369782
申请日：2003-02-19
申请人： David D. Heston , John G. Heston
发明人： David D. Heston , John G. Heston
IPC分类号： H03K1762
CPC分类号： H03K17/162 , H03K17/693
摘要： A switch circuit includes a first electronic switch coupled between two terminals, and a second electronic switch and a capacitor coupled in series between a reference voltage and a control input of the first electronic switch. A different switch circuit includes first and second electronic switches coupled in series between two terminals with a further terminal coupled to a node between the switches, a third electronic switch and a first capacitor coupled in series between a reference voltage and a control input of the first electronic switch, and a fourth electronic switch and a second capacitor coupled in series between a reference voltage and a control input of the second electronic switch.
摘要翻译：开关电路包括耦合在两个端子之间的第一电子开关和串联耦合在第一电子开关的参考电压和控制输入之间的第二电子开关和电容器。不同的开关电路包括串联耦合在两个端子之间的第一和第二电子开关，其另外的端子耦合到开关之间的节点，第三电子开关和第一电容器串联连接在参考电压和第一电子开关，以及串联耦合在第二电子开关的参考电压和控制输入之间的第四电子开关和第二电容器。

8. 发明授权

US4810980A Matched variable attenuation switched limiter 失效
标题翻译：匹配可变衰减开关限幅器
公开(公告)号：US4810980A
公开(公告)日：1989-03-07
申请号：US58069
申请日：1987-06-04
申请人： David D. Heston , David J. Seymour , Randall E. Lehmann
发明人： David D. Heston , David J. Seymour , Randall E. Lehmann
IPC分类号： H01P1/15 , H01P1/22 , H01P5/04
CPC分类号： H01P1/15 , H01P1/22
摘要： This invention provides a switched limiter with variable attenuation designed with monolithic GaAs p-i-n diodes. Greater than 30 dB of small-signal variable attenuation is achieved at X band frequencies, with a minimum insertion loss of 0.5 dB. The variable attenuation switched limiter provides 15 dB of isolation to a +30 dBm input signal. Under bias conditions that result in variable attenuation the variable attenuation switched limiter input impedance remains matched. When used as a passive limiter, 7 dB of limiting has been achieved for a +30 dBm input signal at 10 GHz.

9. 发明授权

US07755222B2 Method and system for high power switching 有权
标题翻译：大功率开关的方法和系统
公开(公告)号：US07755222B2
公开(公告)日：2010-07-13
申请号：US11328034
申请日：2006-01-09
申请人： David D. Heston , Jon E. Mooney
发明人： David D. Heston , Jon E. Mooney
IPC分类号： H01H47/00
CPC分类号： H03K17/102 , H03K17/6871 , H03K17/693 , Y10T307/845 , Y10T307/858
摘要： According to one embodiment of the invention a method for switching an alternating current signal between at least two paths includes providing, in at least one of the paths, first and second field effect transistors in series. The method also includes providing a control voltage node operable to receive a control voltage and maintaining each of the first and second field effect transistors in pinch-off mode by offsetting a voltage on each gate of the field effect transistors with a DC voltage component other than the control voltage when it is desired for the alternating current not to flow through the at least one path.
摘要翻译：根据本发明的一个实施例，用于在至少两个路径之间切换交流信号的方法包括在至少一个路径中提供串联的第一和第二场效应晶体管。该方法还包括提供控制电压节点，其可操作以接收控制电压，并且通过用直流电压分量除以外的方式抵消场效应晶体管的每个栅极上的电压来保持第一和第二场效应晶体管中的每一个处于夹断模式当期望交流电流不流过至少一个路径时的控制电压。

10. 发明授权

US07199016B2 Integrated circuit resistor 有权
标题翻译：集成电路电阻
公开(公告)号：US07199016B2
公开(公告)日：2007-04-03
申请号：US10917935
申请日：2004-08-13
申请人： David D. Heston , Jon E. Mooney
发明人： David D. Heston , Jon E. Mooney
IPC分类号： H01L21/20 , H01L51/338 , H01L21/337 , H01C10/00 , H01C1/012 , H01C1/146
CPC分类号： H01L27/0605 , H01L27/0802
摘要： An integrated circuit resistor is provided that comprises a mesa 14 between electrical contacts 16 and 18. The electrical resistance between electrical contacts 16 and 18 is selectively increased through the formation of recesses 20 and 22 in the mesa 14. The size of recesses 20 and 22 can be used to tune the value of the electrical resistance between contacts 16 and 18.
摘要翻译：提供了一种集成电路电阻器，其包括电触头16和18之间的台面14。通过在台面14中形成凹部20和22，选择性地增加了电触点16和18之间的电阻。凹槽20和22的尺寸可用于调节触点16和18之间的电阻值。

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