专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08466425B2 Chalcogenide glass ionizing radiation sensor 有权
标题翻译：硫族化物玻璃电离辐射传感器
公开(公告)号：US08466425B2
公开(公告)日：2013-06-18
申请号：US13249106
申请日：2011-09-29
申请人： Maria Mitkova , Darryl P. Butt
发明人： Maria Mitkova , Darryl P. Butt
IPC分类号： G01T1/26 , H01L31/08
CPC分类号： G01T1/06 , H01L31/0322 , H01L31/085 , Y02E10/541
摘要： A chalcogenide glass radiation sensor comprising a chalcogenide glass layer coupled to at least two electrodes and a metal source, and a method using the same are disclosed. The chalcogenide glass layer has a resistivity and the at least two electrodes are configured to facilitate the measurement of the resistivity of the chalcogenide glass layer. The coupling of the metal source and the chalcogenide glass layer is such that the resistivity of the chalcogenide glass layer changes upon exposure to ionizing radiation. The metal source is configured to be external to an electric field that may form between the at least two electrodes as the resistivity of the chalcogenide glass layer is measured.
摘要翻译：公开了一种硫族化物玻璃辐射传感器及其使用方法，该硫族化物玻璃辐射传感器包括耦合到至少两个电极和金属源的硫族化物玻璃层。硫族化物玻璃层具有电阻率，并且至少两个电极被配置为有助于测量硫族化物玻璃层的电阻率。金属源和硫族化物玻璃层的耦合使得硫族化物玻璃层的电阻率在暴露于电离辐射时改变。金属源被配置为在测量硫族化物玻璃层的电阻率时可以形成在至少两个电极之间的电场的外部。

2. 发明授权

US5220824A High temperature, tube burst test apparatus 失效
标题翻译：高温，管爆试验装置
公开(公告)号：US5220824A
公开(公告)日：1993-06-22
申请号：US748174
申请日：1991-08-20
申请人： David L. Shelleman , Darryl P. Butt , John R. Hellmann , Richard E. Tressler , John J. Mecholsky, Jr.
发明人： David L. Shelleman , Darryl P. Butt , John R. Hellmann , Richard E. Tressler , John J. Mecholsky, Jr.
IPC分类号： G01N3/00 , G01N3/02 , G01N3/12 , G01N33/38
CPC分类号： G01N3/12 , G01N2203/0044 , G01N2203/0067 , G01N2203/0226 , G01N2203/0274 , G01N33/388
摘要： A testing apparatus is described that enables both single and double-ended tubular members to be tested under pressure and at elevated temperatures. For double-ended tubular members, the apparatus comprises first and second pressure seals at either end of the tubular member under test, both seals including annular compliant members that bear upon the internal surface of the tubular member. A heater is positioned within the tubular member and one of the pressure seals has an orifice through which the heater is connected to a power source. Pressurization occurs through an orifice in the other pressure seal and cooling apparatus surrounds the first and second ends of the tubular member to cool the pressure seals, thereby enabling the annular compliant members to retain their compliancy when the tubular member is heated to test temperature. For single-ended tubular members, a single pressure seal is used having pathways for both electrical and pressurization connections to the interior of the tubular member.
摘要翻译：描述了一种测试装置，其能够在压力和升高的温度下测试单端和双端管状构件。对于双端管状构件，该装置包括在待测管状构件的任一端处的第一和第二压力密封件，两个密封件包括承载在管状构件的内表面上的环形柔性构件。加热器定位在管状构件内，其中一个压力密封件具有孔口，加热器通过该孔口连接到电源。通过另一个压力密封件中的孔口发生加压，并且冷却装置围绕管状构件的第一和第二端部以冷却压力密封件，从而当管状构件被加热以测试温度时，使环形顺应构件保持其适应性。对于单端管状构件，使用单个压力密封件具有用于与管状构件的内部的电和加压连接的路径。

3. 发明申请

US20130082185A1 CHALCOGENIDE GLASS IONIZING RADIATION SENSOR 有权
标题翻译： CHALCOGENIDE玻璃离子传感器
公开(公告)号：US20130082185A1
公开(公告)日：2013-04-04
申请号：US13249106
申请日：2011-09-29
申请人： Maria Mitkova , Darryl P. Butt
发明人： Maria Mitkova , Darryl P. Butt
IPC分类号： H01L31/0264 , G01T1/24 , G01T1/26
CPC分类号： G01T1/06 , H01L31/0322 , H01L31/085 , Y02E10/541
摘要： A chalcogenide glass radiation sensor comprising a chalcogenide glass layer coupled to at least two electrodes and a metal source, and a method using the same are disclosed. The chalcogenide glass layer has a resistivity and the at least two electrodes are configured to facilitate the measurement of the resistivity of the chalcogenide glass layer. The coupling of the metal source and the chalcogenide glass layer is such that the resistivity of the chalcogenide glass layer changes upon exposure to ionizing radiation. The metal source is configured to be external to an electric field that may form between the at least two electrodes as the resistivity of the chalcogenide glass layer is measured.
摘要翻译：公开了一种硫族化物玻璃辐射传感器及其使用方法，该硫族化物玻璃辐射传感器包括耦合到至少两个电极和金属源的硫族化物玻璃层。硫族化物玻璃层具有电阻率，并且至少两个电极被配置为有助于测量硫族化物玻璃层的电阻率。金属源和硫族化物玻璃层的耦合使得硫族化物玻璃层的电阻率在暴露于电离辐射时改变。金属源被配置为在测量硫族化物玻璃层的电阻率时可以形成在至少两个电极之间的电场的外部。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式