专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07863632B2 High performance light-emitting devices 失效
标题翻译：高性能发光装置
公开(公告)号：US07863632B2
公开(公告)日：2011-01-04
申请号：US11573774
申请日：2004-08-23
申请人： Li Li , Jerzy Dobrowolski , Daniel Poitras
发明人： Li Li , Jerzy Dobrowolski , Daniel Poitras
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L51/5265 , H01L51/0059 , H01L51/0078 , H01L51/0081
摘要： An organic light emitting device consists of a layered structure including a top multilayer stack, a bottom multilayer stack, a cavity layer between the top multilayer stack and the bottom multilayer stack, and an organic light emitting region within the cavity layer. The layered structure is constructed such that the product of phase factors ξ1 and ξ2 is. greater than 80% at the center of at least one emitting wavelength region and for a normal viewing angle, wherein where Ra− and Rb+ are the reflectance of the top and bottom multilayer stacks respectively, φa− and φb+ are the phase changes on reflection for the top and bottom multilayer stacks respectively, α1 β1 are respectively the real and imaginary parts of the phase thickness of the cavity layer, α2 and β2 are respectively the real and imaginary parts of the phase thickness of the light-emitting region at the operating wavelength of the device, x is the mean distance of light emitting region from the bottom multilayer stack, n and k are the refractive index and absorption coefficient of the cavity layer, θcavity is the emitting angle inside the cavity layer, and d is the physical thickness of said cavity layer. This condition improves the light output efficiency of the device.
摘要翻译：有机发光器件由包括顶层多层堆叠，底层多层堆叠，顶层多层叠层和底层多层堆叠之间的空腔层以及空腔层内的有机发光区域的分层结构组成。构造层状结构，使得相位因子＆xgr1和xgr2的乘积为。在至少一个发射波长区域的中心处大于80％，并且对于正常视角，其中其中R a和R b +分别是顶部和底部多层叠层的反射率，并且＆phgr; b +是相位分别为顶层和底层多层堆叠的反射变化，α1和bgr1分别是空腔层相位厚度的实部和虚部，α2和＆bgr; 2分别是相位厚度的实部和虚部在器件的工作波长处的发光区域，x是发光区域与底部多层堆叠体的平均距离，n和k是空腔层的折射率和吸收系数，腔体是内部的发射角空腔层，d是所述腔层的物理厚度。该条件提高了器件的光输出效率。

2. 发明申请

US20100142566A1 Multi-band multiwavelength quantum dot mode-locked lasers 有权
标题翻译：多波段多波长量子点锁模激光器
公开(公告)号：US20100142566A1
公开(公告)日：2010-06-10
申请号：US12585830
申请日：2009-09-25
申请人： Jiaren Liu , Zhenguo Lu , Sylvain Raymond , Philip Poole , Pedro Barrios , Daniel Poitras
发明人： Jiaren Liu , Zhenguo Lu , Sylvain Raymond , Philip Poole , Pedro Barrios , Daniel Poitras
IPC分类号： H01S5/065 , H01S5/34 , H01S5/00
CPC分类号： H01S5/065 , B82Y20/00 , H01S5/0657 , H01S5/3412
摘要： A multi-band (multi-colour) multiwavelength mode locked laser diode is provided by dynamic phase compensation of a quantum dot active medium. The laser diode is provided with a PIN diode structure where the active medium consists of a plurality of layers of quantum dots such as those produced by self-assembly from known chemical beam epitaxy methods. The multiplicity of bands may be produced by AC Stark splitting, frequency selective attenuation, or by the inclusion of multiple different layers having different, respective, peak ASE emissions. Dispersion compensation within laser facets, waveguides, and the optically active media permit the selection of a fixed dispersion within the cavity. A dynamic group phase change induced by the AC Stark effect permits compensation of the fixed dispersion sufficiently to produce an intraband mode-locked laser. Even interband mode locking was observed.
摘要翻译：通过量子点活性介质的动态相位补偿提供多波段（多色）多波长锁模激光二极管。激光二极管设置有PIN二极管结构，其中活性介质由多个量子点层组成，例如通过已知化学束外延方法通过自组装产生的量子点。频带的多样性可以通过AC Stark分裂，频率选择性衰减或包含具有不同的相应峰值ASE发射的多个不同的层来产生。激光小平面，波导和光学活性介质内的色散补偿允许选择腔内的固定分散体。由AC Stark效应引起的动态组相变使得可以充分补偿固定分散体，以产生嵌入式锁模激光器。观察到带间模式锁定。

3. 发明申请

US20070246705A1 High Performance Light-Emitting Devices 失效
标题翻译：高性能发光器件
公开(公告)号：US20070246705A1
公开(公告)日：2007-10-25
申请号：US11573774
申请日：2004-08-23
申请人： Li Li , Jerzy Dobrowolski , Daniel Poitras
发明人： Li Li , Jerzy Dobrowolski , Daniel Poitras
IPC分类号： H01L51/00 , H01L21/00
CPC分类号： H01L51/5265 , H01L51/0059 , H01L51/0078 , H01L51/0081
摘要： An organic light emitting device consists of a layered structure including a top multilayer stack, a bottom multilayer stack, a cavity layer between the top multilayer stack and the bottom multilayer stack, and an organic light emitting region within the cavity layer. The layered structure is constructed such that the product of phase factors ξ1 and ξ2 is. greater than 80% at the center of at least one emitting wavelength region and for a normal viewing angle, wherein where Ra− and Rb+ are the reflectance of the top and bottom multilayer stacks respectively, φa− and φb+ are the phase changes on reflection for the top and bottom multilayer stacks respectively, α1 β1 are respectively the real and imaginary parts of the phase thickness of the cavity layer, α2 and β2 are respectively the real and imaginary parts of the phase thickness of the light-emitting region at the operating wavelength of the device, x is the mean distance of light emitting region from the bottom multilayer stack, n and k are the refractive index and absorption coefficient of the cavity layer, θcavity is the emitting angle inside the cavity layer, and d is the physical thickness of said cavity layer. This condition improves the light output efficiency of the device.
摘要翻译：有机发光器件由包括顶层多层堆叠，底层多层堆叠，顶层多层叠层和底层多层堆叠之间的空腔层以及空腔层内的有机发光区域的分层结构组成。层状结构被构造成使得相位因子x 1和x 2 2的乘积是。在至少一个发射波长区域的中心处大于80％，并且具有正常的视角，其中R a a和 - 分别是顶部和底部多层叠层的反射率，分别为phi＆lt; SUB＆gt;和＆lt; b＆gt;＆lt; +分别为顶层和底层多层叠层反射的相变，α1β1分别为相厚度的实部和虚部腔层，α2和β2分别是器件的工作波长处的发光区域的相位厚度的实部和虚部，x是距离底层多层堆叠的发光区域的平均距离，n和k是空腔层的折射率和吸收系数，θ是空腔层内的发射角，d是物理层的物理所述腔层的厚度。该条件提高了器件的光输出效率。

4. 发明授权

US07769062B2 Quantum dot based semiconductor waveguide devices 有权
标题翻译：量子点式半导体波导器件
公开(公告)号：US07769062B2
公开(公告)日：2010-08-03
申请号：US12076618
申请日：2008-03-20
申请人： Zhenguo Lu , Jiaren Liu , Sylvain Raymond , Philip Poole , Pedro Barrios , Daniel Poitras
发明人： Zhenguo Lu , Jiaren Liu , Sylvain Raymond , Philip Poole , Pedro Barrios , Daniel Poitras
IPC分类号： H01S3/10 , H01S3/091
CPC分类号： H01S5/341 , B82Y20/00 , H01S5/0608 , H01S5/1096 , H01S5/3412 , H01S5/34306 , H01S5/34373
摘要： Methods and devices for providing a multiwavelength laser which may be used for multicasting and other optical communications uses. The present invention provides a quantum dot based multiwavelength laser with a monolithic gain block. The Fabry-Perot gain block has both upper and lower InP cladding layers. The laser system has a middle quantum dot layer with multiple stacked layers of InAs quantum dots embedded in InGaAsP. When provided with a CW injection current, the laser system produces an output spectra with equally spaced multiple emission peaks. With an input optical data signal applied to the laser system, the laser system duplicates the data in the input signal across multiple different wavelengths.
摘要翻译：用于提供可用于组播和其他光通信使用的多波长激光器的方法和装置。本发明提供了一种具有单片增益块的基于量子点的多波长激光器。法布里 - 珀罗增益块具有上和下InP包层。激光系统具有中子量子点层，InGaAsP中嵌有InAs量子点的多层堆叠层。当提供CW注入电流时，激光系统产生具有等间隔的多个发射峰的输出光谱。通过施加到激光系统的输入光学数据信号，激光系统在多个不同波长上复制输入信号中的数据。

5. 发明授权

US07991023B2 Multi-band multiwavelength quantum dot mode-locked lasers 有权
标题翻译：多波段多波长量子点锁模激光器
公开(公告)号：US07991023B2
公开(公告)日：2011-08-02
申请号：US12585830
申请日：2009-09-25
申请人： Jiaren Liu , Zhenguo Lu , Sylvain Raymond , Philip Poole , Pedro Barrios , Daniel Poitras
发明人： Jiaren Liu , Zhenguo Lu , Sylvain Raymond , Philip Poole , Pedro Barrios , Daniel Poitras
IPC分类号： H01S3/89 , H01S3/10
CPC分类号： H01S5/065 , B82Y20/00 , H01S5/0657 , H01S5/3412
摘要： A multi-band (multi-color) multiwavelength mode locked laser diode is provided by dynamic phase compensation of a quantum dot active medium. The laser diode is provided with a PIN diode structure where the active medium consists of a plurality of layers of quantum dots such as those produced by self-assembly from known chemical beam epitaxy methods. The multiplicity of bands may be produced by AC Stark splitting, frequency selective attenuation, or by the inclusion of multiple different layers having different, respective, peak ASE emissions. Dispersion compensation within laser facets, waveguides, and the optically active media permit the selection of a fixed dispersion within the cavity. A dynamic group phase change induced by the AC Stark effect permits compensation of the fixed dispersion sufficiently to produce an intraband mode-locked laser. Even interband mode locking was observed.
摘要翻译：通过量子点活性介质的动态相位补偿提供多波段（多色）多波长锁模激光二极管。激光二极管设置有PIN二极管结构，其中活性介质由多个量子点层组成，例如通过已知化学束外延方法通过自组装产生的量子点。频带的多样性可以通过AC Stark分裂，频率选择性衰减或包含具有不同的相应峰值ASE发射的多个不同的层来产生。激光小平面，波导和光学活性介质内的色散补偿允许选择腔内的固定分散体。由AC Stark效应引起的动态组相变使得可以充分补偿固定分散体，以产生嵌入式锁模激光器。观察到甚至带间模式锁定。

6. 发明申请

US20110068361A1 HIGH PERFORMANCE LIGHT-EMITTING DEVICES 审中-公开
标题翻译：高性能发光设备
公开(公告)号：US20110068361A1
公开(公告)日：2011-03-24
申请号：US12957619
申请日：2010-12-01
申请人： Li Li , Jerzy Dobrowolski , Daniel Poitras
发明人： Li Li , Jerzy Dobrowolski , Daniel Poitras
IPC分类号： H01L33/44
CPC分类号： H01L51/5265 , H01L51/0059 , H01L51/0078 , H01L51/0081
摘要： A light emitting device in the form of a layered structure has a passive bottom multilayer stack including a cathode layer, a cavity layer including a light emitting region, a passive top multilayer stack including a hole transport layer, and a transparent anode layer. The passive bottom and top multilayer stacks are devoid of a light emitting layer. A transparent substrate, through which light is emitted from the device, is located over the top multilayer stack. At least one functional additional layer group in the passive top multilayer stack controls the reflectance of the passive top multilayer stack and phase changes occurring upon reflection from the passive top multilayer stack in the cavity layer.
摘要翻译：层状结构形式的发光器件具有包括阴极层，包括发光区域的空腔层，包括空穴传输层的无源顶层多层叠层和透明阳极层的无源底层多层叠层。被动底层和顶层多层叠层没有发光层。从该装置发射光的透明基板位于顶层多层叠层之上。无源顶层多层堆叠中的至少一个功能性附加层组控制无源顶层多层叠层的反射率以及在空腔层中从无源顶层多层堆叠反射时发生的相变。

7. 发明授权

US08796012B2 Grating-based evanescent field molecular sensor using a thin silicon waveguide layer 有权
标题翻译：基于光栅的渐逝场分子传感器使用薄硅波导层
公开(公告)号：US08796012B2
公开(公告)日：2014-08-05
申请号：US13129892
申请日：2009-12-02
申请人： Bill Sinclair , Jens Schmid , Philip Waldron , Dan-Xia Xu , Adam Densmore , Trevor Mischki , Greg Lopinski , Jean Lapointe , Daniel Poitras , Siegfried Janz
发明人： Bill Sinclair , Jens Schmid , Philip Waldron , Dan-Xia Xu , Adam Densmore , Trevor Mischki , Greg Lopinski , Jean Lapointe , Daniel Poitras , Siegfried Janz
IPC分类号： C12M1/34 , G01N33/543 , G01N33/551
CPC分类号： G01N33/54373 , G01N21/7743 , G01N33/551 , Y10S435/808 , Y10S436/805
摘要： A technique for high sensitivity evanescent field molecular sensing employs a detection scheme that simultaneously couples a polarized beam to a single mode of a waveguide, and couples the polarized beam out of the waveguide to specularly reflect the beam by the same grating. Strong interaction with the single (preferably TM) mode is provided by using a silicon on insulator (SOI) wafer having a waveguide thickness chosen between 10-400 nm so that the majority of the mode field strength spans the evanescent field. Well known, robust techniques for producing a grating on the waveguide are provided. Interrogation from a backside of the SOI wafer is taught.
摘要翻译：用于高灵敏度渐逝场分子感测的技术采用同时将偏振光束耦合到波导的单个模式并将偏振光束耦合到波导外的检测方案，以通过相同的光栅镜像反射光束。通过使用波导厚度选择在10-400nm之间的绝缘体上硅（SOI）晶片来提供与单一（优选TM）模式的强相互作用，使得大部分模场电场强度跨越ev逝场。众所周知，提供了用于在波导上制造光栅的可靠的技术。教授SOI晶片背面的询问。

8. 发明申请

US20110223688A1 GRATING-BASED EVANESCENT FIELD MOLECULAR SENSOR USING A THIN SILICON WAVEGUIDE LAYER 有权
标题翻译：基于GRATING的EVANESCENT场分子传感器使用薄硅波片
公开(公告)号：US20110223688A1
公开(公告)日：2011-09-15
申请号：US13129892
申请日：2009-12-02
申请人： Bill Sinclair , Jens Schmid , Philip Waldron , Dan-Xia Xu , Adam Densmore , Trevor Mischki , Greg Lopointe , Jean Lapointe , Daniel Poitras , Siegfried Janz
发明人： Bill Sinclair , Jens Schmid , Philip Waldron , Dan-Xia Xu , Adam Densmore , Trevor Mischki , Greg Lopointe , Jean Lapointe , Daniel Poitras , Siegfried Janz
IPC分类号： G01N33/566 , G01N30/00
CPC分类号： G01N33/54373 , G01N21/7743 , G01N33/551 , Y10S435/808 , Y10S436/805
摘要： A technique for high sensitivity evanescent field molecular sensing employs a detection scheme that simultaneously couples a polarized beam to a single mode of a waveguide, and couples the polarized beam out of the waveguide to specularly reflect the beam by the same grating. Strong interaction with the single (preferably TM) mode is provided by using a silicon on insulator (SOI) wafer having a waveguide thickness chosen between 10-400 nm so that the majority of the mode field strength spans the evanescent field. Well known, robust techniques for producing a grating on the waveguide are provided. Interrogation from a backside of the SOI wafer is taught.
摘要翻译：用于高灵敏度渐逝场分子感测的技术采用同时将偏振光束耦合到波导的单个模式并将偏振光束耦合到波导外的检测方案，以通过相同的光栅镜像反射光束。通过使用波导厚度选择在10-400nm之间的绝缘体上硅（SOI）晶片来提供与单一（优选TM）模式的强相互作用，使得大部分模场电场强度跨越ev逝场。众所周知，提供了用于在波导上制造光栅的可靠的技术。教授SOI晶片背面的询问。

9. 发明申请

US20090238228A1 Quantum dot based semiconductor waveguide devices 有权
标题翻译：量子点式半导体波导器件
公开(公告)号：US20090238228A1
公开(公告)日：2009-09-24
申请号：US12076618
申请日：2008-03-20
申请人： Zhenguo Lu , Jiaren Liu , Sylvain Raymond , Philip Poole , Pedro Barrios , Daniel Poitras
发明人： Zhenguo Lu , Jiaren Liu , Sylvain Raymond , Philip Poole , Pedro Barrios , Daniel Poitras
IPC分类号： H01S5/00
CPC分类号： H01S5/341 , B82Y20/00 , H01S5/0608 , H01S5/1096 , H01S5/3412 , H01S5/34306 , H01S5/34373
摘要： Methods and devices for providing a multiwavelength laser which may be used for multicasting and other optical communications uses. The present invention provides a quantum dot based multiwavelength laser with a monolithic gain block. The Fabry-Perot gain block has both upper and lower InP cladding layers. The laser system has a middle quantum dot layer with multiple stacked layers of InAs quantum dots embedded in InGaAsP. When provided with a CW injection current, the laser system produces an output spectra with equally spaced multiple emission peaks. With an input optical data signal applied to the laser system, the laser system duplicates the data in the input signal across multiple different wavelengths.
摘要翻译：用于提供可用于组播和其他光通信使用的多波长激光器的方法和装置。本发明提供了一种具有单片增益块的基于量子点的多波长激光器。法布里 - 珀罗增益块具有上和下InP包层。激光系统具有中子量子点层，InGaAsP中嵌有InAs量子点的多层堆叠层。当提供CW注入电流时，激光系统产生具有等间隔的多个发射峰的输出光谱。通过施加到激光系统的输入光学数据信号，激光系统在多个不同波长上复制输入信号中的数据。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式