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1. 发明授权

US4390510A Process for treating spent silicon-containing reaction masses to produce halosilanes 失效
标题翻译：用于处理含有废硅的反应物质以制备卤代硅烷的方法
公开(公告)号：US4390510A
公开(公告)日：1983-06-28
申请号：US349139
申请日：1982-02-16
申请人： Alan Ritzer , Bakulesh Shah , Daniel E. Sliva
发明人： Alan Ritzer , Bakulesh Shah , Daniel E. Sliva
IPC分类号： C01B33/107 , C07F7/16 , C01B33/08
CPC分类号： C07F7/16 , C01B33/107 , C01B33/1071
摘要： Improved yields of monohydrogentrihalosilanes are achieved by contacting the residual silicon obtained from the preparation of organohalosilanes by a metal-catalyzed direct process by contacting the residual silicon simultaneously with gaseous hydrogen halide and with gaseous alkyl halide to form a residual silicon contact mass; selecting a temperature between about 200.degree. C. and about 350.degree. C. at which alkylation of the silicon contact mass in inhibited and at which hydrohalogenation of the silicon contact mass occurs; and heating the silicon contact mass at the selected temperature. The silicon reacts with the gaseous alkyl halide and the gaseous hydrogen halide at the selected temperature to produce improved yields of the monohydrogentrihalosilane. In preferred embodiments, monohydrogentrichlorosilane is produced by reacting residual silicon with hydrogen chloride and methyl chloride at a temperature less than the temperature at which a predominantly alkylation reaction occurs with the residual contact mass so that there is sufficient hydrohalogenation to form the monohydrogentrichlorosilane.
摘要翻译：单氢化三卤硅烷的提高产率是通过金属催化的直接方法使残留的硅与气态卤化氢和气态烷基卤接触而形成剩余的硅接触物质而使得到的由有机卤代硅烷制备得到的剩余硅与选择约200℃至约350℃的温度，其中硅接触物质的烷基化被抑制并发生硅接触质量的氢卤化; 并在所选择的温度下加热硅接触块。硅在所选择的温度下与气态烷基卤化物和气态卤化氢反应，以产生单氢化三卤硅烷的提高的产率。在优选的实施方案中，通过使残余硅与氯化氢和氯甲烷在低于与残余接触质量发生主要烷基化反应的温度的温度下反应而产生单氢化三氯硅烷，使得存在足够的氢卤化以形成单氢三氯硅烷。

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