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1. 发明授权

US08698195B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08698195B2
公开(公告)日：2014-04-15
申请号：US13329727
申请日：2011-12-19
申请人： Daisuke Oya , Katsumi Nakamura
发明人： Daisuke Oya , Katsumi Nakamura
IPC分类号： H01L29/66
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0696 , H01L29/4236
摘要： A stabilizing plate portion is formed in a region of a first main surface lying between first and second insulated gate field effect transistor portions. The stabilizing plate portion includes a first stabilizing plate arranged closest to the first insulated gate field effect transistor portion and a second stabilizing plate arranged closest to the second insulated gate field effect transistor portion. An emitter electrode is electrically connected to an emitter region of each of the first and second insulated gate field effect transistor portions, electrically connected to each of the first and second stabilizing plates, and arranged on the entire first main surface lying between the first and second stabilizing plates, with an insulating layer being interposed.
摘要翻译：在位于第一和第二绝缘栅场效应晶体管部分之间的第一主表面的区域中形成稳定板部分。稳定板部分包括最靠近第一绝缘栅场效应晶体管部分布置的第一稳定板和最靠近第二绝缘栅场效应晶体管部分布置的第二稳定板。发射电极电连接到第一和第二绝缘栅场效应晶体管部分的每个的发射极区域，电连接到第一和第二稳定板中的每一个，并且布置在位于第一和第二绝缘栅极效应晶体管的第一和第二绝缘栅极稳定板，绝缘层被插入。

2. 发明申请

US20120267680A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120267680A1
公开(公告)日：2012-10-25
申请号：US13329727
申请日：2011-12-19
申请人： Daisuke Oya , Katsumi Nakamura
发明人： Daisuke Oya , Katsumi Nakamura
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0696 , H01L29/4236
摘要： A stabilizing plate portion is formed in a region of a first main surface lying between first and second insulated gate field effect transistor portions. The stabilizing plate portion includes a first stabilizing plate arranged closest to the first insulated gate field effect transistor portion and a second stabilizing plate arranged closest to the second insulated gate field effect transistor portion. An emitter electrode is electrically connected to an emitter region of each of the first and second insulated gate field effect transistor portions, electrically connected to each of the first and second stabilizing plates, and arranged on the entire first main surface lying between the first and second stabilizing plates, with an insulating layer being interposed.
摘要翻译：在位于第一和第二绝缘栅场效应晶体管部分之间的第一主表面的区域中形成稳定板部分。稳定板部分包括最靠近第一绝缘栅场效应晶体管部分布置的第一稳定板和最靠近第二绝缘栅场效应晶体管部分布置的第二稳定板。发射电极电连接到第一和第二绝缘栅场效应晶体管部分的每个的发射极区域，电连接到第一和第二稳定板中的每一个，并且布置在位于第一和第二绝缘栅极效应晶体管的第一和第二绝缘栅极稳定板，绝缘层被插入。

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