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1. 发明授权

US08768163B2 Detecting rogue ONU, OLT and PON system 有权
标题翻译：检测流氓ONU，OLT和PON系统
公开(公告)号：US08768163B2
公开(公告)日：2014-07-01
申请号：US13219123
申请日：2011-08-26
申请人： Geun Yong Kim , Sung Chang Kim , Dongsoo Lee , Mun Seob Lee , Hark Yoo , Youngsuk Lee , Sim Kwon Yoon , Jong Deog Kim
发明人： Geun Yong Kim , Sung Chang Kim , Dongsoo Lee , Mun Seob Lee , Hark Yoo , Youngsuk Lee , Sim Kwon Yoon , Jong Deog Kim
IPC分类号： H04B17/00
CPC分类号： H04Q11/0067 , H04Q2011/0081 , H04Q2011/0083
摘要： A method and apparatus of detecting a rogue optical network unit (ONU) is provided. An optical line terminal (OLT) detects an abnormal upstream transmission to determine a plurality of rogue ONU candidates, and transmits a sleep allow message instructing a transition to a sleep mode to each of the plurality of rogue ONU candidates. The OLT detects the rogue ONU among the plurality of rogue ONU candidates based on upstream transmissions from the plurality of rogue ONU candidates in the sleep mode. Since the detection of the rogue ONU is performed in the sleep mode, the remaining ONUs can transition from the sleep mode to the normal mode after the detection of the rogue ONU is completed, thereby making it possible to rapidly resume upstream communication.
摘要翻译：提供了一种检测流氓光网络单元（ONU）的方法和装置。光线路终端（OLT）检测异常上行传输以确定多个流氓ONU候选，并且向多个流氓ONU候选中的每一个发送指示向休眠模式转换的睡眠允许消息。 OLT根据睡眠模式下来自多个流氓ONU候选的上行传输，在多个流氓ONU候选中检测不流氓ONU。由于在睡眠模式下执行了流氓ONU的检测，所以在完成了恶意ONU的检测之后，剩余的ONU可以从睡眠模式转换到正常模式，从而可以快速恢复上游通信。

2. 发明授权

US08630550B2 Optical repeater and optical signal amplifying method thereof 有权
标题翻译：光中继器及其光信号放大方法
公开(公告)号：US08630550B2
公开(公告)日：2014-01-14
申请号：US13221306
申请日：2011-08-30
申请人： Mun Seob Lee , Jong Deog Kim , Dongsoo Lee , Sung Chang Kim , Hark Yoo , Geun Yong Kim , Youngsuk Lee , Sim-Kwon Yoon
发明人： Mun Seob Lee , Jong Deog Kim , Dongsoo Lee , Sung Chang Kim , Hark Yoo , Geun Yong Kim , Youngsuk Lee , Sim-Kwon Yoon
IPC分类号： H04B10/00
CPC分类号： H04B10/2972
摘要： Disclosed is an optical amplifier which includes an upward optical amplifier configured to amplify an input upward optical signal of an input optical signal; and a control circuit configured to control an operation of the upward optical amplifier according to whether an upward stream is detected from the input upward optical signal.
摘要翻译：公开了一种光放大器，其包括被配置为放大输入光信号的输入向上光信号的向上光放大器; 以及控制电路，被配置为根据从输入的上行光信号检测到上行流来控制向上的光放大器的动作。

3. 发明授权

US08314405B2 Apparatus for measuring fluorescence lifetime 有权
标题翻译：用于测量荧光寿命的装置
公开(公告)号：US08314405B2
公开(公告)日：2012-11-20
申请号：US12252313
申请日：2008-10-15
申请人： Dug Young Kim , Sucbei Moon , Dongsoo Lee
发明人： Dug Young Kim , Sucbei Moon , Dongsoo Lee
IPC分类号： G01T1/10 , G01N21/61
CPC分类号： G01N21/6408
摘要： Disclosed is an apparatus for measuring a fluorescence lifetime. The apparatus for measuring the fluorescence lifetime comprises an excitation light generator that generates excitation light to be irradiated on a sample including fluorescence molecules; a fluorescence photon collecting unit that collects a plurality of fluorescence photons generated by irradiating the excitation light on the sample; a light sensor that converts the collected fluorescence photons into a fluorescence electrical signal; and a fluorescence lifetime signal processor that determines the fluorescence lifetime by calculating the average time of the fluorescence electrical signal with respect to a predetermined apparatus delay time. According to the above configuration, the present invention can accurately and precisely measure a fluorescence lifetime in a short measurement time by easy calculation.
摘要翻译：公开了一种用于测量荧光寿命的装置。用于测量荧光寿命的装置包括激发光发生器，其产生要照射在包含荧光分子的样品上的激发光; 荧光光子收集单元，其收集通过将样品上的激发光照射而产生的多个荧光光子; 将所收集的荧光光子转换成荧光电信号的光传感器; 以及荧光寿命信号处理器，其通过相对于预定的设备延迟时间计算荧光电信号的平均时间来确定荧光寿命。根据上述结构，本发明能够通过容易的计算在短的测定时间内精确而准确地测定荧光寿命。

4. 发明申请

US20110171338A1 APPARATUS AND METHOD FOR MOLDING COMPOUND 审中-公开
标题翻译：用于模塑化合物的装置和方法
公开(公告)号：US20110171338A1
公开(公告)日：2011-07-14
申请号：US12948179
申请日：2010-11-17
申请人： DongChul Han , Sanggeun Kim , Kyoungrae Cho , Dongsoo Lee , Jongkak Jang , Ho-Soo Jang
发明人： DongChul Han , Sanggeun Kim , Kyoungrae Cho , Dongsoo Lee , Jongkak Jang , Ho-Soo Jang
IPC分类号： B29C45/24
CPC分类号： B29C45/38 , B29C45/14655
摘要： Provided are a device and method for molding a compound. The device for molding a compound may include a lower mold, an upper mold, and a cull degating unit. The lower mold may be configured to support a substrate and attach to a compound injector and the upper mold may be configured to cover the lower mold to form a space between the lower mold and the upper mold for receiving a compound from the compound injector. The cull degating unit may be in the upper mold and the cull degating unit may be configured to separate a cull of the compound in an injection passage from the compound molded on the substrate. The compound injector may be configured to inject a compound into the device such that a least a portion of the compound is molded on the substrate.
摘要翻译：提供了一种用于模制化合物的装置和方法。用于模制化合物的装置可以包括下模具，上模具和剔除装置。下模具可以构造成支撑基板并附接到复合注射器，并且上模具可以构造成覆盖下模具以在下模具和上模具之间形成用于从复合注射器接收化合物的空间。剔除单元可以在上模具中，并且剔除单元可以被配置为将喷射通道中的化合物的剔除与模制在基板上的化合物分离。复合注射器可以被配置为将化合物注射到装置中，使得至少一部分化合物在基底上模制。

5. 发明申请

US20160379903A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20160379903A1
公开(公告)日：2016-12-29
申请号：US15165684
申请日：2016-05-26
申请人： TAE-HWA KIM , CHANHOON PARK , DONGSOO LEE , JAEHYUN LEE , HYUNG JOO LEE , KANGMIN JEON , KYOUNGHOON HAN
发明人： TAE-HWA KIM , CHANHOON PARK , DONGSOO LEE , JAEHYUN LEE , HYUNG JOO LEE , KANGMIN JEON , KYOUNGHOON HAN
IPC分类号： H01L21/66 , H01L21/311 , H01L21/3213 , H01L27/115 , H01L21/28
CPC分类号： H01L22/26 , H01J37/32963 , H01J2237/334 , H01L21/28008 , H01L21/31116 , H01L21/32135 , H01L22/12 , H01L27/11556 , H01L27/11582
摘要： A method of fabricating a semiconductor device includes etching a stack of first-material layers and second-material layers alternately disposed one on another on a substrate. An upper portion of the stack is etched using an end point detection (EPD) signal of an etching reaction gas, and a function of an injection time of an etchant with respect to a depth of an opening is obtained while the upper portion of the stack is etched. A lower portion of the stack is etched using the obtained function.
摘要翻译：一种制造半导体器件的方法包括：在衬底上相互交替布置的第一材料层和第二材料层的叠层的蚀刻。使用蚀刻反应气体的端点检测（EPD）信号来蚀刻堆叠的上部，并且获得蚀刻剂相对于开口深度的喷射时间的功能，同时堆叠的上部被蚀刻。使用所获得的功能蚀刻堆叠的下部。

6. 发明申请

US20120152901A1 INDUCTIVELY COUPLED PLASMA SOURCE FOR PLASMA PROCESSING 有权
标题翻译：用于等离子体处理的电感耦合等离子体源
公开(公告)号：US20120152901A1
公开(公告)日：2012-06-21
申请号：US13325455
申请日：2011-12-14
申请人： Vladimir Nagorny , Dongsoo Lee , Andreas Kadavanich
发明人： Vladimir Nagorny , Dongsoo Lee , Andreas Kadavanich
IPC分类号： C23F1/08 , C23F1/00
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32119 , H01J37/32449 , H01J37/32651 , H01J37/32669 , H01J37/32715 , H01J2237/334
摘要： Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.
摘要翻译：公开了等离子体处理装置和方法。本公开的实施例包括具有可操作以接收处理气体的内部空间的处理室，可操作以保持衬底的处理室内部的衬底保持器和至少一个电介质窗口。金属屏蔽层邻近电介质窗设置。金属屏蔽件可以具有周边部分和中心部分。该处理设备包括一个主电感元件，其设置在与金属屏蔽的周边部分相邻的处理室的外部。处理装置还可以包括设置在金属屏蔽件的中心部分和电介质窗口之间的次级电感元件。初级和次级电感元件可以执行不同的功能，可以具有不同的结构配置，并且可以在不同的频率下工作。

7. 发明申请

US20110232082A1 APPARATUS FOR MOUNTING SEMICONDUCTOR DEVICE 有权
标题翻译：安装半导体器件的装置
公开(公告)号：US20110232082A1
公开(公告)日：2011-09-29
申请号：US13071640
申请日：2011-03-25
申请人： TAEHYUN KIM , Dongsoo Lee , Seok Goh , Kyoungbok Cho
发明人： TAEHYUN KIM , Dongsoo Lee , Seok Goh , Kyoungbok Cho
IPC分类号： H01L21/58
CPC分类号： H01L24/75 , H01L21/67144 , H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/95 , H01L2221/68336 , H01L2221/68381 , H01L2224/131 , H01L2224/7501 , H01L2224/75251 , H01L2224/7565 , H01L2224/75651 , H01L2224/75744 , H01L2224/75745 , H01L2224/75801 , H01L2224/75821 , H01L2224/759 , H01L2224/7598 , H01L2224/81011 , H01L2224/81191 , H01L2224/81815 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/014 , H05K1/0269 , H05K13/046 , Y10T29/53178
摘要： An apparatus for mounting a semiconductor device includes a mounting component and a loading component. The mounting component is configured to mount the semiconductor device onto a circuit board. The loading component is disposed adjacent to the mounting component, and is configured to supply the semiconductor device and the circuit board to the mounting component.
摘要翻译：一种用于安装半导体器件的装置包括安装部件和装载部件。安装部件被配置为将半导体器件安装到电路板上。装载部件邻近安装部件设置，并且构造成将半导体器件和电路板提供给安装部件。

8. 发明申请

US20110129223A1 APPARATUS AND METHOD FOR ALLOCATING DYNAMIC BANDWIDTH 有权
标题翻译：用于分配动态带宽的装置和方法
公开(公告)号：US20110129223A1
公开(公告)日：2011-06-02
申请号：US12941475
申请日：2010-11-08
申请人： Hark Yoo , Geun Yong Kim , Youngsuk Lee , Sung Chang Kim , Jong Deog Kim , Dongsoo Lee
发明人： Hark Yoo , Geun Yong Kim , Youngsuk Lee , Sung Chang Kim , Jong Deog Kim , Dongsoo Lee
IPC分类号： H04J14/00
CPC分类号： H04Q11/0067 , H04Q2011/0064
摘要： A dynamic bandwidth allocation apparatus of a passive optical network detects guarantee agreement information of each transmission container (T-CONT) queue of at least one optical network unit (ONU) that is connected to the dynamic bandwidth allocation apparatus in order to dynamically allocate a bandwidth is provided. The dynamic bandwidth allocation apparatus sets a queue threshold according to a buffer size of each T-CONT queue of at least one ONU, and calculates a service level agreement (SLA) parameter of at least one ONU using guarantee agreement information and a queue threshold. The dynamic bandwidth allocation apparatus allocates a bandwidth for every frame of each ONU using each SLA parameter of at least one ONU.
摘要翻译：无源光网络的动态带宽分配装置检测连接到动态带宽分配装置的至少一个光网络单元（ONU）的每个传输容器（T-CONT）队列的保证协议信息，以动态分配带宽被提供。动态带宽分配装置根据至少一个ONU的每个T-CONT队列的缓冲器大小设置队列阈值，并使用保证协议信息和队列阈值来计算至少一个ONU的服务级别协议（SLA）参数。动态带宽分配装置使用至少一个ONU的每个SLA参数为每个ONU的每个帧分配带宽。

9. 发明申请

US20110058810A1 OPTICAL NETWORK UNIT (ONU) AND METHOD OF OPERATING THE ONU 审中-公开
标题翻译：光网络单元（ONU）和操作ONU的方法
公开(公告)号：US20110058810A1
公开(公告)日：2011-03-10
申请号：US12876689
申请日：2010-09-07
申请人： Mun Seob LEE , Dongsoo Lee , Byung-Tak Lee , Geun Yong Kim , Hark Yoo , Sung Chang Kim , Youngsuk Lee
发明人： Mun Seob LEE , Dongsoo Lee , Byung-Tak Lee , Geun Yong Kim , Hark Yoo , Sung Chang Kim , Youngsuk Lee
IPC分类号： H04J14/00
CPC分类号： H04Q11/0067 , H04Q2011/0079 , H04Q2011/0083
摘要： Provided is an Optical Network Unit (ONU) and a method of operating the ONU. The ONU may include: a measurement unit to measure a downstream optical signal strength of downstream data received from an Optical Line Termination (OLT) via an optical splitter; a determination unit to determine an upstream optical signal strength based on the measured downstream optical signal strength; and a communication unit to transmit, to the OLT via the optical splitter, upstream data generated based on the determined upstream optical signal strength.
摘要翻译：提供了一种光网络单元（ONU）和操作ONU的方法。 ONU可以包括：测量单元，用于测量经由光分路器从光线路终端（OLT）接收的下行数据的下行光信号强度; 确定单元，用于基于所测量的下游光信号强度来确定上游光信号强度; 以及通信单元，其经由所述光分路器向所述OLT发送基于所确定的上行光信号强度而生成的上行数据。

10. 发明授权

US09847266B2 Method of fabricating semiconductor device 有权
公开(公告)号：US09847266B2
公开(公告)日：2017-12-19
申请号：US15165684
申请日：2016-05-26
申请人： Tae-Hwa Kim , Chanhoon Park , Dongsoo Lee , Jaehyun Lee , Hyung Joo Lee , Kangmin Jeon , Kyounghoon Han
发明人： Tae-Hwa Kim , Chanhoon Park , Dongsoo Lee , Jaehyun Lee , Hyung Joo Lee , Kangmin Jeon , Kyounghoon Han
IPC分类号： H01L21/00 , H01L21/66 , H01L27/11582 , H01L21/28 , H01L21/3213 , H01L21/311 , H01J37/32 , H01L27/11556
CPC分类号： H01L22/26 , H01J37/32963 , H01J2237/334 , H01L21/28008 , H01L21/31116 , H01L21/32135 , H01L22/12 , H01L27/11556 , H01L27/11582
摘要： A method of fabricating a semiconductor device includes etching a stack of first-material layers and second-material layers alternately disposed one on another on a substrate. An upper portion of the stack is etched using an end point detection (EPD) signal of an etching reaction gas, and a function of an injection time of an etchant with respect to a depth of an opening is obtained while the upper portion of the stack is etched. A lower portion of the stack is etched using the obtained function.

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