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1. 发明授权

US06926935B2 Proximity deposition 有权
标题翻译：接近沉积
公开(公告)号：US06926935B2
公开(公告)日：2005-08-09
申请号：US10607814
申请日：2003-06-27
申请人： Jason Harrison Arjavac , Liang Hong , Henri Lezec , Craig Matthew Henry , John Anthony Notte, IV
发明人： Jason Harrison Arjavac , Liang Hong , Henri Lezec , Craig Matthew Henry , John Anthony Notte, IV
IPC分类号： C23C16/48 , C23C16/04 , H01J37/317 , H01L21/302 , C23C14/30
CPC分类号： C23C16/486 , C23C16/047 , C23C16/487 , H01J37/3178 , H01J2237/3142 , H01J2237/31732 , H01J2237/3174 , H01J2237/31744
摘要： The present invention provides methods for achieving substantially damage-free material deposition using charged particle (e.g., ion, electron) or light beams for generating secondary electrons to induce deposition in a gas deposition material. Among other things, some of the methods can be used to deposit, with satisfactory throughput, a protective layer over a semiconductor feature without significantly altering the feature thereby preserving it for accurate measurement. In one embodiment, the beam is directed onto an electron-source surface next to the target surface but not within it. The beam is scanned on the electron-source surface causing secondary electrons to be emitted from the electron-source surface and enter the region over the target surface to interact with deposition gas for depositing a desired amount of material onto the target surface. In this way, materials can be deposited onto a the target surface at a suitably high rate without having to expose the target surface, itself, to the beam being used to perform the material deposition. In another embodiment, the beam is directed onto a separate electron generating surface (preferably one that has a relatively high secondary electron emission coefficient) proximal to the target surface for generating the electrons to deposit the deposition material onto the target surface.
摘要翻译：本发明提供了使用带电粒子（例如离子，电子）或用于产生二次电子以在气体沉积材料中产生沉积的光束实现基本上无损材料沉积的方法。除其他之外，一些方法可以用于以令人满意的生产量沉积半导体特征上的保护层，而不显着改变特征，从而保留其用于精确测量。在一个实施例中，光束被引导到邻近目标表面但不在其内的电子源表面上。光束在电子 - 源表面上被扫描，导致二次电子从电子 - 源表面发射并进入目标表面上的区域与沉积气体相互作用，以将期望量的材料沉积到目标表面上。以这种方式，可以以适当高的速率将材料沉积到目标表面上，而不必将目标表面本身暴露于用于进行材料沉积的光束。在另一个实施例中，光束被引导到靠近目标表面的单独的电子产生表面（优选具有相对高的二次电子发射系数），用于产生电子以将沉积材料沉积到目标表面上。

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