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1. 发明申请

US20160139712A1 USER INTERFACE SYSTEM 有权
公开(公告)号：US20160139712A1
公开(公告)日：2016-05-19
申请号：US15006699
申请日：2016-01-26
申请人： Craig Ciesla , Micah B, Yairi
发明人： Craig Ciesla , Micah B, Yairi
IPC分类号： G06F3/044
CPC分类号： G06F3/044 , G06F3/0202 , G06F3/03547 , G06F3/041 , G06F3/04886 , G06F3/04895 , G06F2203/04809
摘要： The user interface system of the preferred embodiment includes: a layer defining a surface, a substrate supporting the layer and at least partially defining a cavity, a displacement device coupled to the cavity and adapted to expand the cavity thereby deforming a particular region of the surface, a touch sensor coupled to the substrate and adapted to sense a user touch proximate the particular region of the surface, and a display coupled to the substrate and adapted to output images to the user. The user interface system of the preferred embodiments has been specifically designed to be incorporated into an electronic device, such as the display of a mobile phone, but may be incorporated in any suitable device that interfaces with a user in both a visual and tactile manner.

2. 发明授权

US07834379B2 Avalanche photodiode with edge breakdown suppression 有权
标题翻译：具有边缘击穿抑制的雪崩光电二极管
公开(公告)号：US07834379B2
公开(公告)日：2010-11-16
申请号：US12173189
申请日：2008-07-15
申请人： Zhong Pan , David Venables , Craig Ciesla
发明人： Zhong Pan , David Venables , Craig Ciesla
IPC分类号： H01L31/18
CPC分类号： H01L31/1075 , H01L21/2258 , H01L31/1035 , H01L31/184 , Y02E10/544
摘要： The invention relates to an avalanche photodiode having enhanced gain uniformity enabled by a tailored diffused p-n junction profile. The tailoring is achieved by a two stage doping process incorporating a solid source diffusion in combination with conventional gas source diffusion. The solid source diffusion material is selected for its solubility to the dopant compared to the solubility of the multiplication layer to dopant. The solid source has a diameter between the first and second diffusion windows. Thus, there are three distinct diffusion regions during the second diffusion. The dopant in the multiplication layer at the edge region, the dopant from the solid source material with a relatively higher dopant concentration (limited by the solubility of the dopant in the solid source material) at the intermediate region, and the central region exposed to an infinite diffusion source from the solid source material as it is continually charged with new dopant from the external gas source. The result is that both the dopant concentration and the diffusion depth decrease gradually from the center to the edge of the device. This tailored diffusion profile enables control of the electric field distribution such that edge breakdown is suppressed.
摘要翻译：本发明涉及一种雪崩光电二极管，其具有通过定制的扩散p-n结分布实现的增强的增益均匀性。通过结合常规气源扩散的固体源扩散的两阶段掺杂工艺来实现定制。与增殖层对掺杂剂的溶解度相比，选择固体源扩散材料对于掺杂剂的溶解度。固体源具有在第一和第二扩散窗口之间的直径。因此，在第二次扩散期间存在三个不同的扩散区域。在边缘区域的乘法层中的掺杂剂，来自固体源材料的掺杂剂在中间区域具有相对较高的掺杂剂浓度（受掺杂剂在固体源材料中的溶解度的限制）和暴露于来自固体源材料的无限扩散源，因为它从外部气体源连续地带有新的掺杂剂。结果是掺杂剂浓度和扩散深度从器件的中心到边缘逐渐减小。这种定制的扩散分布使得能够控制电场分布，从而抑制边缘击穿。

3. 发明授权

US07795064B2 Front-illuminated avalanche photodiode 有权
标题翻译：前照明雪崩光电二极管
公开(公告)号：US07795064B2
公开(公告)日：2010-09-14
申请号：US12260688
申请日：2008-10-29
申请人： Zhong Pan , Craig Ciesla
发明人： Zhong Pan , Craig Ciesla
IPC分类号： H01L21/00
CPC分类号： H01L31/107 , H01L31/18
摘要： The present invention provides a front-illuminated avalanche photodiode (APD) with improved intrinsic responsivity, as well as a method of fabricating such a front-illuminated APD. The front-illuminated APD comprises an APD body of semiconductor material, which includes a substrate and a layer stack disposed on a front surface of the substrate. The layer stack includes an absorption layer, a multiplication layer, and a field-control layer. Advantageously, a back surface of the APD body is mechanically and chemically polished, and a reflector having a reflectance of greater than 90% at the absorption wavelength band is disposed on the back surface of the APD body. Thus, incident light that is not absorbed in a first pass through the absorption layer is reflected by the reflector for a second pass through the absorption layer, increasing the intrinsic responsivity of the front-illuminated APD.
摘要翻译：本发明提供了具有改进的本征响应性的前照明雪崩光电二极管（APD），以及制造这种前照明APD的方法。前照明APD包括半导体材料的APD体，其包括衬底和设置在衬底的前表面上的层堆叠。层叠包括吸收层，倍增层和场控制层。有利地，APD主体的后表面被机械和化学抛光，并且在吸收波长带处具有大于90％的反射率的反射器设置在APD体的背面上。因此，通过吸收层的第一次通过中没有被吸收的入射光被反射器反射，用于通过吸收层的第二次通过，增加了前照明APD的固有响应性。

4. 发明申请

US20100181651A1 SEALED SEMICONDUCTOR DEVICE 有权
标题翻译：密封半导体器件
公开(公告)号：US20100181651A1
公开(公告)日：2010-07-22
申请号：US12689112
申请日：2010-01-18
申请人： Zhong PAN , Craig Ciesla
发明人： Zhong PAN , Craig Ciesla
IPC分类号： H01L29/06 , H01L21/3105 , H01L21/302 , H01L31/105 , H01S5/00
CPC分类号： H01L31/105 , H01L24/24 , H01L31/02161 , H01L2224/73267 , H01L2924/12043 , H01S5/0201 , H01S5/021 , H01S2301/176 , H01L2924/00
摘要： A sealed semiconductor device having reduced delamination of the sealing layer in high temperature, high humidity conditions is disclosed. The semiconductor device includes a substrate and a stack of device layers on the substrate sealed with a sealing layer. The upper surface of a street area of the substrate is oxidized so that the oxidized region extends under the sealing layer. The presence of the oxidized region of the upper surface of the substrate helps reduce the delamination, because the oxidized surface does not react with water to the same extent as a non-oxidized surface. The semiconductor devices remain sealed after dicing through the street area because the oxidized surface does not delaminate.
摘要翻译：公开了一种在高温高湿条件下密封层分层减小的密封半导体器件。半导体器件包括衬底和用密封层密封的衬底上的器件层堆叠。衬底的街道区域的上表面被氧化，使得氧化区域在密封层下方延伸。衬底上表面氧化区的存在有助于减少分层，因为氧化表面不会与水反应至与非氧化表面相同的程度。半导体器件在通过街道区域切割后保持密封，因为氧化表面不分层。

5. 发明申请

US20090020782A1 Avalanche Photodiode With Edge Breakdown Suppression 有权
标题翻译：具有边缘破坏抑制的雪崩光电二极管
公开(公告)号：US20090020782A1
公开(公告)日：2009-01-22
申请号：US12173189
申请日：2008-07-15
申请人： Zhong Pan , David Venables , Craig Ciesla
发明人： Zhong Pan , David Venables , Craig Ciesla
IPC分类号： H01L31/0336 , H01L31/18
CPC分类号： H01L31/1075 , H01L21/2258 , H01L31/1035 , H01L31/184 , Y02E10/544
摘要： The invention relates to an avalanche photodiode having enhanced gain uniformity enabled by a tailored diffused p-n junction profile. The tailoring is achieved by a two stage doping process incorporating a solid source diffusion in combination with conventional gas source diffusion. The solid source diffusion material is selected for its solubility to the dopant compared to the solubility of the multiplication layer to dopant. The solid source has a diameter between the first and second diffusion windows. Thus, there are three distinct diffusion regions during the second diffusion. The dopant in the multiplication layer at the edge region, the dopant from the solid source material with a relatively higher dopant concentration (limited by the solubility of the dopant in the solid source material) at the intermediate region, and the central region exposed to an infinite diffusion source from the solid source material as it is continually charged with new dopant from the external gas source. The result is that both the dopant concentration and the diffusion depth decrease gradually from the center to the edge of the device. This tailored diffusion profile enables control of the electric field distribution such that edge breakdown is suppressed.
摘要翻译：本发明涉及一种雪崩光电二极管，其具有通过定制的扩散p-n结分布实现的增强的增益均匀性。通过结合常规气源扩散的固体源扩散的两阶段掺杂工艺来实现定制。与增殖层对掺杂剂的溶解度相比，选择固体源扩散材料对于掺杂剂的溶解度。固体源具有在第一和第二扩散窗口之间的直径。因此，在第二次扩散期间存在三个不同的扩散区域。在边缘区域的乘法层中的掺杂剂，来自固体源材料的掺杂剂在中间区域具有相对较高的掺杂剂浓度（受掺杂剂在固体源材料中的溶解度的限制）和暴露于来自固体源材料的无限扩散源，因为它从外部气体源连续地带有新的掺杂剂。结果是掺杂剂浓度和扩散深度从器件的中心到边缘逐渐减小。这种定制的扩散分布使得能够控制电场分布，从而抑制边缘击穿。

6. 发明申请

US20070282206A1 Method and apparatus for Terahertz imaging 有权
标题翻译：太赫兹成像的方法和装置
公开(公告)号：US20070282206A1
公开(公告)日：2007-12-06
申请号：US11216616
申请日：2005-08-24
申请人： Donald Arnone , Craig Ciesla
发明人： Donald Arnone , Craig Ciesla
IPC分类号： A61B6/00
CPC分类号： G01N21/3586 , A61B5/0059 , A61B5/0088 , A61B5/0091 , A61B5/4509 , A61B5/7257
摘要： In an apparatus and method for imaging a sample: a) the sample to be imaged is irradiated with pulsed electro-magnetic radiation with a plurality of frequencies in the range from 50 GHz to 84 THz; b) an area of the sample is subdivided into a two dimensional array pixels, and radiation from each pixel is detected over a plurality of frequencies; and c) an image is generated from the radiation detected in step (b) preferably using a frequency or a selection of frequencies from the plurality of frequencies in the pulsed electro-magnetic radiation. The method can be used as a medical imaging technique and can be used to image cancer tumours.
摘要翻译：在用于对样品成像的装置和方法中：a）用50GHz至84THz范围内的多个频率的脉冲电磁辐射照射待成像的样品; b）样本的区域被细分为二维阵列像素，并且在多个频率上检测来自每个像素的辐射; 以及c）优选地，使用来自所述脉冲电磁辐射中的所述多个频率的频率的频率或选择，从步骤（b）中检测到的辐射产生图像。该方法可用作医学成像技术，可用于癌症肿瘤的成像。

7. 发明授权

US08253175B2 Sealed semiconductor device 有权
标题翻译：密封半导体器件
公开(公告)号：US08253175B2
公开(公告)日：2012-08-28
申请号：US12689112
申请日：2010-01-18
申请人： Zhong Pan , Craig Ciesla
发明人： Zhong Pan , Craig Ciesla
IPC分类号： H01L23/28
CPC分类号： H01L31/105 , H01L24/24 , H01L31/02161 , H01L2224/73267 , H01L2924/12043 , H01S5/0201 , H01S5/021 , H01S2301/176 , H01L2924/00
摘要： A sealed semiconductor device having reduced delamination of the sealing layer in high temperature, high humidity conditions is disclosed. The semiconductor device includes a substrate and a stack of device layers on the substrate sealed with a sealing layer. The upper surface of a street area of the substrate is oxidized so that the oxidized region extends under the sealing layer. The presence of the oxidized region of the upper surface of the substrate helps reduce the delamination, because the oxidized surface does not react with water to the same extent as a non-oxidized surface. The semiconductor devices remain sealed after dicing through the street area because the oxidized surface does not delaminate.
摘要翻译：公开了一种在高温高湿条件下密封层分层减小的密封半导体器件。半导体器件包括衬底和用密封层密封的衬底上的器件层堆叠。衬底的街道区域的上表面被氧化，使得氧化区域在密封层下方延伸。衬底上表面氧化区的存在有助于减少分层，因为氧化表面不会与水反应至与非氧化表面相同的程度。半导体器件在通过街道区域切割后保持密封，因为氧化表面不分层。

8. 发明申请

US20090121305A1 Front-Illuminated Avalanche Photodiode 有权
标题翻译：前照明雪崩光电二极管
公开(公告)号：US20090121305A1
公开(公告)日：2009-05-14
申请号：US12260688
申请日：2008-10-29
申请人： Zhong Pan , Craig Ciesla
发明人： Zhong Pan , Craig Ciesla
IPC分类号： H01L31/107 , H01L31/18
CPC分类号： H01L31/107 , H01L31/18
摘要： The present invention provides a front-illuminated avalanche photodiode (APD) with improved intrinsic responsivity, as well as a method of fabricating such a front-illuminated APD. The front-illuminated APD comprises an APD body of semiconductor material, which includes a substrate and a layer stack disposed on a front surface of the substrate. The layer stack includes an absorption layer, a multiplication layer, and a field-control layer. Advantageously, a back surface of the APD body is mechanically and chemically polished, and a reflector having a reflectance of greater than 90% at the absorption wavelength band is disposed on the back surface of the APD body. Thus, incident light that is not absorbed in a first pass through the absorption layer is reflected by the reflector for a second pass through the absorption layer, increasing the intrinsic responsivity of the front-illuminated APD.
摘要翻译：本发明提供了具有改进的本征响应性的前照明雪崩光电二极管（APD），以及制造这种前照明APD的方法。前照明APD包括半导体材料的APD体，其包括衬底和设置在衬底的前表面上的层堆叠。层叠包括吸收层，倍增层和场控制层。有利地，APD主体的后表面被机械和化学抛光，并且在吸收波长带处具有大于90％的反射率的反射器设置在APD体的背面上。因此，通过吸收层的第一次通过中没有被吸收的入射光被反射器反射，用于通过吸收层的第二次通过，增加了前照明APD的固有响应性。

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