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1. 发明授权

US06344390B1 Methods of forming the buried strap and its quantum barrier in deep trench cell capacitors 失效
标题翻译：在深沟槽电容器中形成掩埋带及其量子势垒的方法
公开(公告)号：US06344390B1
公开(公告)日：2002-02-05
申请号：US09607217
申请日：2000-06-30
申请人： Mathias Bostelmann , Corine Bucher , Patrick Raffin , Francis Rodier , Jean-Marc Rousseau
发明人： Mathias Bostelmann , Corine Bucher , Patrick Raffin , Francis Rodier , Jean-Marc Rousseau
IPC分类号： H01L218242
CPC分类号： H01L27/10867
摘要： There is disclosed a method of forming a buried strap (BS) and its quantum conducting barrier (QCB) in a structure wherein a doped polycrystalline silicon region is exposed at the bottom of a recess and separated from a monocrystalline region of a silicon substrate by a region of an insulating material. First, a thin continuous layer of undoped amorphous silicon is deposited by LPCVD to coat said regions. The surface of this layer is nitridized to produce a Si3N4 QCB film. Now, at least one dual layer comprised of an undoped amorphous silicon layer and a dopant monolayer is deposited onto the structure by LPCVD. The recess is filled with undoped amorphous silicon to terminate the buried strap and its QCB. Finally, the structure is heated to activate the dopants in the buried strap to allow an electrical continuity between said polycrystalline and monocrystalline regions through the QCB by a quantum mechanical effect. All these steps are performed in situ in the same LPCVD tool.
摘要翻译：公开了一种在其中掺杂多晶硅区域暴露在凹陷的底部并与硅衬底的单晶区域分离的结构中的掩埋带（BS）及其量子传导屏障（QCB）的形成方法，绝缘材料的区域。首先，通过LPCVD沉积薄层的未掺杂非晶硅，以涂覆所述区域。将该层的表面氮化以产生Si 3 N 4 QCB膜。现在，通过LPCVD将至少一个由未掺杂的非晶硅层和掺杂剂单层组成的双层沉积到该结构上。凹槽填充有未掺杂的非晶硅，以终止埋管带及其QCB。最后，将结构加热以激活埋入带中的掺杂剂，以通过量子力学效应通过QCB在所述多晶和单晶区域之间实现电连续性。所有这些步骤在相同的LPCVD工具中原位进行。

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