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    • 3. 发明授权
    • Nitride film wet stripping
    • 氮化膜湿剥
    • US08105851B1
    • 2012-01-31
    • US12889167
    • 2010-09-23
    • Shao-Yen KuChung-Ru YangChi-Ming Yang
    • Shao-Yen KuChung-Ru YangChi-Ming Yang
    • H01L21/66
    • H01L21/31111H01L21/6708H01L21/67253
    • Provided is a method of removing a nitride material from a semiconductor wafer. The method includes monitoring a silicon concentration level in a chemical solution. The chemical solution may include a phosphoric acid. The method includes adjusting the silicon concentration level in response to the monitoring. The method includes heating the chemical solution. The method includes applying the heated chemical solution to a wafer surface in a manner so that a temperature of the heated chemical solution is within a predefined temperature range throughout the wafer surface. The method includes etching a nitride material of the wafer using the heated chemical solution.
    • 提供从半导体晶片去除氮化物材料的方法。 该方法包括监测化学溶液中的硅浓度水平。 化学溶液可以包括磷酸。 该方法包括响应于监测调整硅浓度水平。 该方法包括加热化学溶液。 该方法包括将加热的化学溶液以使得加热的化学溶液的温度在整个晶片表面的预定温度范围内的方式施加到晶片表面。 该方法包括使用加热的化学溶液蚀刻晶片的氮化物材料。
    • 6. 发明授权
    • RTP spike annealing for semiconductor substrate dopant activation
    • 用于半导体衬底掺杂剂激活的RTP尖峰退火
    • US08232114B2
    • 2012-07-31
    • US12360437
    • 2009-01-27
    • Chin-Ming LinChung-Ru YangChi-Ming Yang
    • Chin-Ming LinChung-Ru YangChi-Ming Yang
    • H01L21/324C30B1/02
    • H01L21/324H01L21/67115
    • A semiconductor substrate has a plurality of active device patterns. At least some of the active device patterns comprise doped regions. The substrate has a plurality of surface regions, including the active device patterns and un-patterned regions, with respectively different reflectances for light in a near infrared wavelength. A first difference is determined, between a largest reflectance at the near infrared wavelength and a smallest reflectance at the near infrared wavelength. A second infrared wavelength is determined, for which a second difference between a largest reflectances a smallest reflectance is substantially less than the first difference at the near infrared wavelength. A rapid thermal processing (RTP) spike annealing dopant activation step is performed on the substrate using a second light source providing light at the second wavelength.
    • 半导体衬底具有多个有源器件图案。 至少一些有源器件图案包括掺杂区域。 衬底具有多个表面区域,包括有源器件图案和未图案化区域,对于近红外波长的光分别具有不同的反射率。 在近红外波长处的最大反射率和近红外波长处的最小反射率之间确定第一差异。 确定第二红外波长,对于该第二红外波长,最大反射率之间的最小反射率的第二差值实质上小于近红外波长处的第一差。 使用提供第二波长的光的第二光源在衬底上进行快速热处理(RTP)尖峰退火掺杂剂激活步骤。
    • 7. 发明申请
    • RTP SPIKE ANNEALING FOR SEMICONDUCTOR SUBSTRATE DOPANT ACTIVATION
    • US20100190274A1
    • 2010-07-29
    • US12360437
    • 2009-01-27
    • Chin-Ming LINChung-Ru YangChi-Ming Yang
    • Chin-Ming LINChung-Ru YangChi-Ming Yang
    • H01L21/02B05C11/00
    • H01L21/324H01L21/67115
    • A semiconductor substrate has a plurality of active device patterns. At least some of the active device patterns comprise doped regions. The substrate has a plurality of surface regions, including the active device patterns and un-patterned regions, with respectively different reflectances for light in a near infrared wavelength. A first difference is determined, between a largest reflectance at the near infrared wavelength and a smallest reflectance at the near infrared wavelength. A second infrared wavelength is determined, for which a second difference between a largest reflectances a smallest reflectance is substantially less than the first difference at the near infrared wavelength. A rapid thermal processing (RTP) spike annealing dopant activation step is performed on the substrate using a second light source providing light at the second wavelength.
    • 半导体衬底具有多个有源器件图案。 至少一些有源器件图案包括掺杂区域。 衬底具有多个表面区域,包括有源器件图案和未图案化区域,对于近红外波长的光分别具有不同的反射率。 在近红外波长处的最大反射率和近红外波长处的最小反射率之间确定第一差异。 确定第二红外波长,对于该第二红外波长,最大反射率之间的最小反射率的第二差值实质上小于近红外波长处的第一差。 使用提供第二波长的光的第二光源在衬底上进行快速热处理(RTP)尖峰退火掺杂剂激活步骤。