会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Transistor structure and driving circuit structure
    • 晶体管结构和驱动电路结构
    • US08841667B2
    • 2014-09-23
    • US13565796
    • 2012-08-03
    • Jyu-Yu ChangChun-Wei LaiPo-Yuan ShenWen-Jung LeeChih-Wei Tai
    • Jyu-Yu ChangChun-Wei LaiPo-Yuan ShenWen-Jung LeeChih-Wei Tai
    • H01L29/04
    • H01L27/124G09G3/3674G09G2310/0286H01L29/41733
    • A transistor structure disposed on a substrate includes a gate electrode, a gate insulating layer overlapping the gate electrode, a channel layer overlapping the gate electrode, and a plurality of first electrodes and a plurality of second electrodes overlapping the gate electrode. The gate insulating layer is disposed between the channel layer and the gate electrode. Besides, the gate insulating layer is located among the first electrodes, the second electrodes, and the gate electrode. The first electrodes and the second electrodes are alternately arranged along a first direction. Each of the first electrodes has a first width along the first direction. Each of the second electrodes has a second width along the first direction. A ratio of the first width to the second width ranges from 2 to 20. A driving circuit structure having the transistor structure is also provided.
    • 设置在基板上的晶体管结构包括栅电极,与栅电极重叠的栅极绝缘层,与栅电极重叠的沟道层,以及与栅电极重叠的多个第一电极和多个第二电极。 栅极绝缘层设置在沟道层和栅电极之间。 此外,栅极绝缘层位于第一电极,第二电极和栅电极之间。 第一电极和第二电极沿着第一方向交替布置。 每个第一电极具有沿第一方向的第一宽度。 每个第二电极具有沿第一方向的第二宽度。 第一宽度与第二宽度的比率范围为2至20.还提供了具有晶体管结构的驱动电路结构。
    • 5. 发明申请
    • TRANSISTOR STRUCTURE AND DRIVING CIRCUIT STRUCTURE
    • 晶体管结构与驱动电路结构
    • US20130306968A1
    • 2013-11-21
    • US13565796
    • 2012-08-03
    • Jyu-Yu ChangChun-Wei LaiPo-Yuan ShenWen-Jung LeeChih-Wei Tai
    • Jyu-Yu ChangChun-Wei LaiPo-Yuan ShenWen-Jung LeeChih-Wei Tai
    • H01L29/786
    • H01L27/124G09G3/3674G09G2310/0286H01L29/41733
    • A transistor structure disposed on a substrate includes a gate electrode, a gate insulating layer overlapping the gate electrode, a channel layer overlapping the gate electrode, and a plurality of first electrodes and a plurality of second electrodes overlapping the gate electrode. The gate insulating layer is disposed between the channel layer and the gate electrode. Besides, the gate insulating layer is located among the first electrodes, the second electrodes, and the gate electrode. The first electrodes and the second electrodes are alternately arranged along a first direction. Each of the first electrodes has a first width along the first direction. Each of the second electrodes has a second width along the first direction. A ratio of the first width to the second width ranges from 2 to 20. A driving circuit structure having the transistor structure is also provided.
    • 设置在基板上的晶体管结构包括栅电极,与栅电极重叠的栅极绝缘层,与栅电极重叠的沟道层,以及与栅电极重叠的多个第一电极和多个第二电极。 栅极绝缘层设置在沟道层和栅电极之间。 此外,栅极绝缘层位于第一电极,第二电极和栅电极之间。 第一电极和第二电极沿着第一方向交替布置。 每个第一电极具有沿第一方向的第一宽度。 每个第二电极具有沿第一方向的第二宽度。 第一宽度与第二宽度的比率范围为2至20.还提供了具有晶体管结构的驱动电路结构。