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1. 发明授权

US08916051B2 Method of forming via hole 有权
标题翻译：形成通孔的方法
公开(公告)号：US08916051B2
公开(公告)日：2014-12-23
申请号：US12977092
申请日：2010-12-23
申请人： Cheng-Han Wu , Chun-Chi Yu
发明人： Cheng-Han Wu , Chun-Chi Yu
IPC分类号： H01L21/311 , H01L21/302 , H01L21/033 , H01L21/768 , H01L21/3213
CPC分类号： H01L21/76816 , H01L21/0276 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： The present invention provides a method of forming via holes. First, a substrate is provided. A plurality of first areas is defined on the substrate. A dielectric layer and a blocking layer are formed on the substrate. A patterned photoresist layer is formed on the blocking layer. The patterned photoresist layer includes a plurality of holes arranged in a regular array wherein the area of the hole array is greater than those of the first areas. The blocking layer in the first areas is removed by using the patterned photoresist layer as a mask. Lastly, the dielectric layer is patterned to form at least a via hole in the dielectric layer in the first area.
摘要翻译：本发明提供一种形成通孔的方法。首先，提供基板。在基板上限定多个第一区域。在基板上形成介电层和阻挡层。在阻挡层上形成图案化的光致抗蚀剂层。图案化的光致抗蚀剂层包括以规则阵列布置的多个孔，其中孔阵列的面积大于第一区域的面积。通过使用图案化的光致抗蚀剂层作为掩模来去除第一区域中的阻挡层。最后，电介质层被图案化以在第一区域中的电介质层中至少形成通孔。

2. 发明申请

US20120164835A1 Method of Forming Via Hole 有权
标题翻译：形成通孔的方法
公开(公告)号：US20120164835A1
公开(公告)日：2012-06-28
申请号：US12977092
申请日：2010-12-23
申请人： Cheng-Han Wu , Chun-Chi Yu
发明人： Cheng-Han Wu , Chun-Chi Yu
IPC分类号： H01L21/312
CPC分类号： H01L21/76816 , H01L21/0276 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： The present invention provides a method of forming via holes. First, a substrate is provided. A plurality of first areas is defined on the substrate. A dielectric layer and a blocking layer are formed on the substrate. A patterned photoresist layer is formed on the blocking layer. The patterned photoresist layer includes a plurality of holes arranged in a regular array wherein the area of the hole array is greater than those of the first areas. The blocking layer in the first areas is removed by using the patterned photoresist layer as a mask. Lastly, the dielectric layer is patterned to form at least a via hole in the dielectric layer in the first area.
摘要翻译：本发明提供一种形成通孔的方法。首先，提供基板。在基板上限定多个第一区域。在基板上形成介电层和阻挡层。在阻挡层上形成图案化的光致抗蚀剂层。图案化的光致抗蚀剂层包括以规则阵列布置的多个孔，其中孔阵列的面积大于第一区域的面积。通过使用图案化的光致抗蚀剂层作为掩模来去除第一区域中的阻挡层。最后，电介质层被图案化以在第一区域中的电介质层中至少形成通孔。

3. 发明申请

US20080067335A1 METHOD OF MOVING BUBBLES 审中-公开
标题翻译：移动泡沫的方法
公开(公告)号：US20080067335A1
公开(公告)日：2008-03-20
申请号：US11457816
申请日：2006-07-17
申请人： Ya-Ching Hou , Huan-Ting Tseng , Benjamin Szu-Min Lin , Bo-Jou Lu , Yong-Fa Huang , Chun-Chi Yu
发明人： Ya-Ching Hou , Huan-Ting Tseng , Benjamin Szu-Min Lin , Bo-Jou Lu , Yong-Fa Huang , Chun-Chi Yu
IPC分类号： H05H3/02
CPC分类号： G21K1/006
摘要： A method of moving bubbles includes utilizing optical tweezers to form a bright photoresist area and a dark photoresist area in the photoresist layer. The bubbles in the photoresist layer move from the bright photoresist area to the dark photoresist area.
摘要翻译：一种移动泡沫的方法包括利用光学镊子在光致抗蚀剂层中形成光致抗蚀剂区域和暗光致抗蚀剂区域。光致抗蚀剂层中的气泡从光致抗蚀剂区域移动到暗光致抗蚀剂区域。

4. 发明申请

US20070215040A1 METHOD AND RELATED OPERATION SYSTEM FOR IMMERSION LITHOGRAPHY 有权
标题翻译：方法及其相关操作系统
公开(公告)号：US20070215040A1
公开(公告)日：2007-09-20
申请号：US11308245
申请日：2006-03-14
申请人： Yong-Fa Huang , Benjamin Szu-Min Lin , Chun-Chi Yu , Huan-Ting Tseng , Bo-Jou Lu
发明人： Yong-Fa Huang , Benjamin Szu-Min Lin , Chun-Chi Yu , Huan-Ting Tseng , Bo-Jou Lu
IPC分类号： B05C13/00
CPC分类号： G03F7/70341 , G03F7/70533
摘要： To avoid the yield of wafers that undergo immersion lithography influencing by delay of post exposure baking (PEB), an operation system adjusts a speed of inputting the wafers to undergo immersion lithography according to a status of wafers that have finished exposure and are waiting for baking. Therefore, the wafers that have finished exposure are transmitted to be baked efficiently and on time.
摘要翻译：为了避免经历后曝光烘烤（PEB）延迟影响的浸没光刻的晶片的产量，操作系统根据已经完成曝光并正在等待烘焙的晶片的状态来调节输入晶片以进行浸渍光刻的速度。因此，已经完成曝光的晶片被传输以有效地并且准时地被烘烤。

5. 发明申请

US20070020532A1 METHOD FOR DESIGNING PHOTOMASK 有权
标题翻译：设计光子的方法
公开(公告)号：US20070020532A1
公开(公告)日：2007-01-25
申请号：US11161084
申请日：2005-07-22
申请人： Ming-Feng Shieh , Benjamin Szu-Min Lin , Chun-Chi Yu , Jian-Shin Liou
发明人： Ming-Feng Shieh , Benjamin Szu-Min Lin , Chun-Chi Yu , Jian-Shin Liou
IPC分类号： G03C5/00 , G06F17/50 , G03F1/00
CPC分类号： G03F1/32 , G03F1/36
摘要： The present invention provides a method for designing a mask. First, a main pattern including at least a strip pattern is formed on the mask substrate. A shift feature is added to one end of the strip pattern of the main pattern. Either the phase shift or the optical transmission or both of the shift feature can be adjusted to optimize the resultant critical dimension between line-ends of the main pattern, thus improving pullback of the line-ends of the strip pattern in the main pattern.
摘要翻译：本发明提供一种掩模设计方法。首先，在掩模基板上形成至少包括带状图案的主图案。移位功能被添加到主图案的条纹图案的一端。可以调整相移或光学传输或移位特征两者以优化主图案的线端之间的合成临界尺寸，从而改善主图案中带状图案的线端的拉回。

6. 发明授权

US08564143B2 Overlay mark for multiple pre-layers and currently layer 有权
标题翻译：叠加标记为多个预先图层和当前图层
公开(公告)号：US08564143B2
公开(公告)日：2013-10-22
申请号：US13366622
申请日：2012-02-06
申请人： Yi-Ting Chen , Chien-Hao Chen , Yuan-Chi Pai , Chun-Chi Yu
发明人： Yi-Ting Chen , Chien-Hao Chen , Yuan-Chi Pai , Chun-Chi Yu
IPC分类号： H01L23/544 , H01L21/66 , G01B11/00
CPC分类号： G03F7/70633
摘要： An overlay mark is described, including N (N≧2) groups of first x-directional linear patterns each defined from a different one of N pre-layers, N groups of second x-directional linear patterns of a current layer, N groups of first y-directional linear patterns each defined from a different one of the N pre-layers, and N groups of second y-directional linear patterns of the current layer. Each group of second x-directional linear patterns is disposed together with one group of first x-directional linear patterns, wherein the second linear patterns and the x-directional linear patterns are arranged alternately. Each group of second y-directional linear patterns is disposed together with one group of first y-directional linear patterns, wherein the second linear patterns and the first linear patterns are arranged alternately.
摘要翻译：描述了覆盖标记，其包括N（N> = 2）个第一x方向线性图案组，每组由N个预先层中的不同的N个，当前层的N个第二x方向线性图案，N个组第一y方向线性图案分别由N个预先层中的不同的一个以及当前层的N组第二个y方向线性图案定义。每组第二x方向线性图案与一组第一x方向线性图案一起布置，其中第二线性图案和x方向线性图案交替布置。每组第二y方向线性图案与一组第一y方向线性图案一起布置，其中第二线性图案和第一线性图案交替布置。

7. 发明申请

US20130200535A1 OVERLAY MARK FOR MULTIPLE PRE-LAYERS AND CURRENTLY LAYER 有权
标题翻译：多个预制层和当前层的覆盖标记
公开(公告)号：US20130200535A1
公开(公告)日：2013-08-08
申请号：US13366622
申请日：2012-02-06
申请人： Yi-Ting Chen , Chien-Hao Chen , Yuan-Chi Pai , Chun-Chi Yu
发明人： Yi-Ting Chen , Chien-Hao Chen , Yuan-Chi Pai , Chun-Chi Yu
IPC分类号： H01L23/544
CPC分类号： G03F7/70633
摘要： An overlay mark is described, including N (N≧2) groups of first x-directional linear patterns each defined from a different one of N pre-layers, N groups of second x-directional linear patterns of a current layer, N groups of first y-directional linear patterns each defined from a different one of the N pre-layers, and N groups of second y-directional linear patterns of the current layer. Each group of second x-directional linear patterns is disposed together with one group of first x-directional linear patterns, wherein the second linear patterns and the x-directional linear patterns are arranged alternately. Each group of second y-directional linear patterns is disposed together with one group of first y-directional linear patterns, wherein the second linear patterns and the first linear patterns are arranged alternately.
摘要翻译：描述了覆盖标记，其包括N（N> = 2）个第一x方向线性图案组，每组由N个预先层中的不同的N个，当前层的N个第二x方向线性图案，N个组第一y方向线性图案分别由N个预先层中的不同的一个以及当前层的N组第二个y方向线性图案定义。每组第二x方向线性图案与一组第一x方向线性图案一起布置，其中第二线性图案和x方向线性图案交替布置。每组第二y方向线性图案与一组第一y方向线性图案一起布置，其中第二线性图案和第一线性图案交替布置。

8. 发明授权

US08729716B2 Alignment accuracy mark 有权
标题翻译：对准精度标记
公开(公告)号：US08729716B2
公开(公告)日：2014-05-20
申请号：US13285255
申请日：2011-10-31
申请人： Kai-Lin Chuang , Wen-Liang Huang , Chia-Hung Lin , Chun-Chi Yu
发明人： Kai-Lin Chuang , Wen-Liang Huang , Chia-Hung Lin , Chun-Chi Yu
IPC分类号： H01L23/544
CPC分类号： G03F7/70683 , G03F7/70633
摘要： An alignment accuracy (AA) mark is described, including N (N≧3) pattern sets defined by N exposure steps respectively. The N exposure steps are performed also to a device area disposed on a wafer together with the AA mark. The i-th (i=1, 2 . . . N−1) pattern set surrounds the (i+1)-th pattern set. Each pattern set includes a 1st set of x-directional linear patterns, a 2nd set of x-directional linear patterns arranged opposite to the 1st set of x-directional linear patterns in the y-direction, a 1st set of y-directional linear patterns, and a 2nd set of y-directional linear patterns arranged opposite to the 1st set of y-directional linear patterns in the x-direction, wherein each set of x- or y-directional linear patterns include at least three separate parallel linear patterns.
摘要翻译：描述了对准精度（AA）标记，包括分别由N个曝光步骤定义的N（N≥3）个图案组。 N个曝光步骤也与设置在晶片上的与AA标记一起的设备区域执行。第i（i = 1,2，...，N-1）模式集围绕第（i + 1）个模式集合。每个图案组包括第一组x方向线性图案，与y方向上的第一组x方向线性图案相对布置的第二组x方向线性图案，第一组y方向线性图案以及与x方向上的第一组y方向线性图案相对布置的第二组y方向线性图案，其中每组x或y方向线性图案包括至少三个单独的平行线形图案。

9. 发明授权

US08476004B2 Method for forming photoresist patterns 有权
标题翻译：光刻胶图形形成方法
公开(公告)号：US08476004B2
公开(公告)日：2013-07-02
申请号：US13169045
申请日：2011-06-27
申请人： Yong-Fa Huang , Cheng-Han Wu , Yuan-Chi Pai , Chun-Chi Yu , Hung-Yi Wu
发明人： Yong-Fa Huang , Cheng-Han Wu , Yuan-Chi Pai , Chun-Chi Yu , Hung-Yi Wu
IPC分类号： G03F7/26
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/095 , G03F7/168 , G03F7/2041
摘要： A method for forming photoresist patterns includes providing a substrate, forming a bi-layered photoresist on the substrate, and performing a photolithography process to pattern the bi-layered photoresist. The bi-layered photoresist includes a first photoresist layer and a second photoresist layer positioned between the first photoresist layer and the substrate. The first photoresist layer has a first refraction index and the second photoresist layer has a second refraction index, and the second refraction index is larger than the first refraction index.
摘要翻译：形成光致抗蚀剂图案的方法包括提供衬底，在衬底上形成双层光致抗蚀剂，以及执行光刻工艺以对双层光致抗蚀剂进行图案化。双层光致抗蚀剂包括第一光致抗蚀剂层和位于第一光致抗蚀剂层和基底之间的第二光致抗蚀剂层。第一光致抗蚀剂层具有第一折射率，第二光致抗蚀剂层具有第二折射率，第二折射率大于第一折射率。

10. 发明申请

US20130106000A1 ALIGNMENT ACCURACY MARK 有权
标题翻译：对准精度标记
公开(公告)号：US20130106000A1
公开(公告)日：2013-05-02
申请号：US13285255
申请日：2011-10-31
申请人： Kai-Lin Chuang , Wen-Liang Huang , Chia-Hung Lin , Chun-Chi Yu
发明人： Kai-Lin Chuang , Wen-Liang Huang , Chia-Hung Lin , Chun-Chi Yu
IPC分类号： H01L23/544
CPC分类号： G03F7/70683 , G03F7/70633
摘要： An alignment accuracy (AA) mark is described, including N (N≧3) pattern sets defined by N exposure steps respectively. The N exposure steps are performed also to a device area disposed on a wafer together with the AA mark. The i-th (i=1, 2 . . . N−1) pattern set surrounds the (i+1)-th pattern set. Each pattern set includes a 1st set of x-directional linear patterns, a 2nd set of x-directional linear patterns arranged opposite to the 1st set of x-directional linear patterns in the y-direction, a 1st set of y-directional linear patterns, and a 2nd set of y-directional linear patterns arranged opposite to the 1st set of y-directional linear patterns in the x-direction, wherein each set of x- or y-directional linear patterns include at least three separate parallel linear patterns.
摘要翻译：描述了对准精度（AA）标记，包括分别由N个曝光步骤定义的N（N> = 3）图案集。 N个曝光步骤也与设置在晶片上的与AA标记一起的设备区域执行。第i（i = 1,2，...，N-1）模式集围绕第（i + 1）个模式集合。每个图案组包括第一组x方向线性图案，与y方向上的第一组x方向线性图案相对布置的第二组x方向线性图案，第一组y方向线性图案以及与x方向上的第一组y方向线性图案相对布置的第二组y方向线性图案，其中每组x或y方向线性图案包括至少三个单独的平行线形图案。

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