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1. 发明授权

US09164183B2 Method for detecting x-ray radiation and detector system with direct conversion detectors 有权
标题翻译：用直接转换检测器检测x射线辐射和检测器系统的方法
公开(公告)号：US09164183B2
公开(公告)日：2015-10-20
申请号：US13419461
申请日：2012-03-14
申请人： Edgar Kraft , Daniel Niederlöhner , Christian Schröter
发明人： Edgar Kraft , Daniel Niederlöhner , Christian Schröter
IPC分类号： G01J1/42 , G01T1/00 , G01T1/40 , G01T1/17 , A61B6/00 , A61B6/03 , G01T1/24
CPC分类号： G01T1/40 , A61B6/032 , A61B6/4241 , A61B6/482 , G01T1/17 , G01T1/247
摘要： A method and a detector system are disclosed for the photon-counting detection of x-ray radiation with direct conversion detectors. In at least one embodiment of the method, as a function of the existing radiation energy, current and/or voltage pulses which are largely proportional thereto are generated, and the generated current and voltage pulses are counted in the detector when a predetermined current and/or voltage source is exceeded, whereby a threshold is used as a predetermined current and/or voltage threshold, which corresponds to a detection of a photon with an energy which is less than the k-edge of the detector material used.
摘要翻译：公开了一种利用直接转换检测器进行X射线辐射的光子计数检测的方法和检测器系统。在该方法的至少一个实施例中，作为现有辐射能的函数，产生与其大部分成比例的电流和/或电压脉冲，并且当预定电流和/ 或超过电压源，由此将阈值用作预定的电流和/或电压阈值，其对应于具有小于所使用的检测器材料的k边缘的能量的光子的检测。

2. 发明授权

US09075147B2 Circuit arrangement for a directly converting detector and likewise the use thereof and a method for reading a directly converting detector 有权
标题翻译：用于直接转换检测器的电路布置，以及其用途以及用于读取直接转换检测器的方法
公开(公告)号：US09075147B2
公开(公告)日：2015-07-07
申请号：US13420903
申请日：2012-03-15
申请人： Christian Schröter
发明人： Christian Schröter
IPC分类号： G01T1/17 , A61B6/03 , G01T1/24
CPC分类号： G01T1/171 , G01T1/247
摘要： A circuit arrangement is disclosed for a detector. In at least one embodiment, the circuit arrangement includes a directly-converting semi-conductor material and pulse-shaper in the signal readout electronics assembly. A method is disclosed for a readout of count impulses generated in the semi-conductor material, wherein part of the pulse-shaper is equipped with a relatively longer shaping time constant and a different part of the pulse-shaper is equipped with a relatively shorter shaping time constant.
摘要翻译：公开了一种用于检测器的电路装置。在至少一个实施例中，电路装置包括信号读出电路组件中的直接转换半导体材料和脉冲整形器。公开了一种用于读出在半导体材料中产生的计数脉冲的方法，其中脉冲整形器的一部分配备有相对较长的成型时间常数，并且脉冲整形器的不同部分配备有较短的成形时间常数。

3. 发明授权

US08389928B2 X-ray detector comprising a directly converting semiconductor layer and calibration method for such an X-ray detector 有权
标题翻译： X射线检测器包括直接转换半导体层和用于这种X射线检测器的校准方法
公开(公告)号：US08389928B2
公开(公告)日：2013-03-05
申请号：US13088448
申请日：2011-04-18
申请人： Peter Hackenschmied , Christian Schröter , Matthias Strassburg
发明人： Peter Hackenschmied , Christian Schröter , Matthias Strassburg
IPC分类号： G01D18/00
CPC分类号： G01T1/249 , G01T1/247 , G01T7/005
摘要： An X-ray detector includes a directly converting semiconductor layer for converting an incident radiation into electrical signals with a band gap energy characteristic of the semiconductor layer, and at least one light source for coupling light into the semiconductor layer, wherein the generated light, for the simulation of incident X-ray quanta, has an energy above the band gap energy of the semiconductor layer. One embodiment includes at least one evaluation unit for calculating an evaluation signal from the electrical signals generated when the light is coupled into the semiconductor layer, and at least one calibration unit for calibrating at least one pulse discriminator on the basis of the evaluation signal. This provides the prerequisites for a rapidly repeatable calibration of the X-ray detector taking into account of the present polarization state without using X-ray radiation. Another embodiment additionally relates to a calibration method for such an X-ray detector.
摘要翻译： X射线检测器包括用于将入射辐射转换成具有半导体层的带隙能量特性的电信号的直接转换半导体层和用于将光耦合到半导体层中的至少一个光源，其中所产生的光用于入射X射线量子点的模拟具有高于半导体层带隙能量的能量。一个实施例包括至少一个评估单元，用于根据当光耦合到半导体层中时产生的电信号计算评估信号;以及至少一个校准单元，用于基于评估信号校准至少一个脉冲鉴别器。这提供了在不使用X射线辐射的情况下考虑到目前的极化状态来快速重复地校准X射线检测器的先决条件。另一个实施例另外涉及这种X射线检测器的校准方法。

4. 发明授权

US09097810B2 Direct radiation converter, radiation detector, medical apparatus and method for producing a direct radiation converter 有权
标题翻译：直接辐射转换器，放射线检测器，用于生产直接辐射转换器的医疗装置和方法
公开(公告)号：US09097810B2
公开(公告)日：2015-08-04
申请号：US13359554
申请日：2012-01-27
申请人： Peter Hackenschmied , Christian Schröter , Matthias Strassburg
发明人： Peter Hackenschmied , Christian Schröter , Matthias Strassburg
IPC分类号： H01L31/102 , G01T1/24 , H01L31/08
CPC分类号： G01T1/24 , H01L31/085
摘要： A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.
摘要翻译：公开了一种直接辐射转换器，其包括具有阳极侧和阴极侧的放射线检测材料，其中放射线检测材料具有在阳极侧至阴极侧方向上运行的掺杂分布。还公开了具有这种直接辐射转换器并且具有阳极阵列和阴极阵列以及可选地具有用于读出检测器信号的评估电子装置的放射线检测器以及具有这种放射线检测器的医疗装置。还描述了一种用于生产直接辐射转换器的方法，其包括在辐射检测材料中并入在阳极侧至阴极侧方向上运行的掺杂分布。

5. 发明授权

US08946838B2 Radiation converter comprising a directly converting semiconductor layer and method for producing such a radiation converter 有权
标题翻译：包括直接转换半导体层的辐射转换器和用于产生这种辐射转换器的方法
公开(公告)号：US08946838B2
公开(公告)日：2015-02-03
申请号：US13111275
申请日：2011-05-19
申请人： Christian Schröter
发明人： Christian Schröter
IPC分类号： H01L31/0224 , H01L31/0304 , H01L31/0296 , H01L31/18 , G01T1/24 , H01L31/08
CPC分类号： G01T1/249 , G01T1/24 , H01L31/085
摘要： A radiation converter includes a directly converting semiconductor layer having grains whose interfaces predominantly run parallel to a drift direction—constrained by an electric field—of electrons liberated in the semiconductor layer. Charge carriers liberated by incident radiation quanta are accelerated in the electric field in the direction of the radiation incidence direction and on account of the columnar or pillar-like texture of the semiconductor layer, in comparison with the known radiation detectors, cross significantly fewer interfaces of the grains that are occupied by defect sites. This increases the charge carrier lifetime/mobility product in the direction of charge carrier transport. Consequently, it is possible to realize significantly thicker semiconductor layers for the counting and/or energy-selective detection of radiation quanta. This increases the absorptivity of the radiation converter which in turn makes it possible to reduce a radiation dose applied to the patient.
摘要翻译：辐射转换器包括直接转换半导体层，其具有主要平行于漂移方向的界面的晶粒，该漂移方向受半导体层中释放的电子的电场约束。通过入射辐射量子放电的电荷载体在辐射入射方向的方向上被加速，并且由于半导体层的柱状或柱状结构，与已知的辐射检测器相比，交叉显着更少的界面由缺陷部位占据的颗粒。这就增加了电荷载流子传输方向上的载流子寿命/迁移率。因此，可以实现用于辐射量子的计数和/或能量选择性检测的明显更厚的半导体层。这增加了辐射转换器的吸收率，这进一步降低了施加到患者的辐射剂量。

6. 发明申请

US20130161773A1 DETECTOR ELEMENT, RADIATION DETECTOR, MEDICAL DEVICE, AND METHOD FOR PRODUCING SUCH A DETECTOR ELEMENT 审中-公开
标题翻译：检测器元件，放射线检测器，医疗设备和生产这种检测器元件的方法
公开(公告)号：US20130161773A1
公开(公告)日：2013-06-27
申请号：US13721130
申请日：2012-12-20
申请人： Fabrice DIERRE , Peter HACKENSCHMIED , Hiroshi KATAKABE , Noriyuki KISHI , Christian SCHRÖTER , Hiroyuki SHIRAKI , Matthias STRASSBURG , Mitsuru TAMASHIRO
发明人： Fabrice DIERRE , Peter HACKENSCHMIED , Hiroshi KATAKABE , Noriyuki KISHI , Christian SCHRÖTER , Hiroyuki SHIRAKI , Matthias STRASSBURG , Mitsuru TAMASHIRO
IPC分类号： H01L31/18 , H01L27/146
CPC分类号： H01L31/1876 , H01L27/14601 , H01L27/14659 , H01L27/14692 , H01L27/14696
摘要： A detector element is disclosed, including a semiconducting converter element and a number of pixilated contacts arranged thereon. A radiation detector is also disclosed including such a detector element, along with a medical device having one or more such radiation detectors. Finally, a method for producing a detector element is disclosed, which includes forming pixelated contacts by way of a photolithographic process on the semiconducting converter element using a lithographic mask arranged on a converter element protective layer.
摘要翻译：公开了一种检测器元件，包括半导体转换器元件和布置在其上的多个像素化触点。还公开了一种辐射检测器，其包括这样的检测器元件，以及具有一个或多个这样的辐射检测器的医疗装置。最后，公开了一种用于制造检测器元件的方法，其包括使用设置在转换器元件保护层上的光刻掩模在半导体转换器元件上通过光刻工艺形成像素化接触。

7. 发明授权

US08445854B2 X-ray radiation detector for use in a CT system 有权
标题翻译：用于CT系统的X射线辐射检测器
公开(公告)号：US08445854B2
公开(公告)日：2013-05-21
申请号：US12591577
申请日：2009-11-24
申请人： Peter Hackenschmied , Christian Schröter , Matthias Strassburg
发明人： Peter Hackenschmied , Christian Schröter , Matthias Strassburg
IPC分类号： H01L27/146
CPC分类号： G01T1/00
摘要： At least one embodiment of the invention relates to an X-ray radiation detector, in particular for use in a CT system. In at least one embodiment, the X-ray radiation detector includes a semiconductor material used for detection, at least two ohmic contacts between the semiconductor material and a contact material, the semiconductor material and contact material each having a specific excitation energy of the charge carriers, with the excitation energy of the contact material corresponding to the excitation energy of the semiconductor material. At least one embodiment of the invention furthermore relates to a CT system in which an X-ray radiation detector is used, the X-ray radiation detector advantageously having at least two ideal ohmic contacts according to at least one embodiment of the invention.
摘要翻译：本发明的至少一个实施例涉及一种X射线辐射检测器，特别是用于CT系统中。在至少一个实施例中，X射线辐射检测器包括用于检测的半导体材料，半导体材料和接触材料之间的至少两个欧姆接触，半导体材料和接触材料各自具有电荷载体的特定激发能，其中接触材料的激发能对应于半导体材料的激发能。本发明的至少一个实施例还涉及其中使用X射线辐射检测器的CT系统，根据本发明的至少一个实施例，X射线辐射检测器有利地具有至少两个理想的欧姆接触。

8. 发明申请

US20120235052A1 METHOD FOR DETECTING X-RAY RADIATION AND DETECTOR SYSTEM WITH DIRECT CONVERSION DETECTORS 有权
标题翻译：用于检测具有直接转换检测器的X射线辐射和探测器系统的方法
公开(公告)号：US20120235052A1
公开(公告)日：2012-09-20
申请号：US13419461
申请日：2012-03-14
申请人： Edgar Kraft , Daniel Niederlöhner , Christian Schröter
发明人： Edgar Kraft , Daniel Niederlöhner , Christian Schröter
IPC分类号： G01T1/18
CPC分类号： G01T1/40 , A61B6/032 , A61B6/4241 , A61B6/482 , G01T1/17 , G01T1/247
摘要： A method and a detector system are disclosed for the photon-counting detection of x-ray radiation with direct conversion detectors. In at least one embodiment of the method, as a function of the existing radiation energy, current and/or voltage pulses which are largely proportional thereto are generated, and the generated current and voltage pulses are counted in the detector when a predetermined current and/or voltage source is exceeded, whereby a threshold is used as a predetermined current and/or voltage threshold, which corresponds to a detection of a photon with an energy which is less than the k-edge of the detector material used.
摘要翻译：公开了一种利用直接转换检测器进行X射线辐射的光子计数检测的方法和检测器系统。在该方法的至少一个实施例中，作为现有辐射能的函数，产生与其大部分成比例的电流和/或电压脉冲，并且当预定电流和/ 或超过电压源，由此将阈值用作预定的电流和/或电压阈值，其对应于具有小于所使用的检测器材料的k边缘的能量的光子的检测。

9. 发明申请

US20110186788A1 Radiation Converter Material, Radiation Converter, Radiation Detector, Use of a Radiation Converter Material and Method for Producing a Radiation Converter Material 有权
标题翻译：辐射转换器材料，辐射转换器，辐射检测器，辐射转换器材料的使用及其制造方法
公开(公告)号：US20110186788A1
公开(公告)日：2011-08-04
申请号：US13016016
申请日：2011-01-28
申请人： Peter HACKENSCHMIED , Christian SCHRÖTER , Matthias STRASSBURG
发明人： Peter HACKENSCHMIED , Christian SCHRÖTER , Matthias STRASSBURG
IPC分类号： H01B1/02 , H01B1/00 , H01B1/06
CPC分类号： G01T1/24 , H01L31/115
摘要： A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·107 Ω·cm and 2·109 Ω·cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.
摘要翻译：辐射转换器材料包括用于将辐射量子直接转换成电荷载流子的半导体材料。在至少一个实施例中，半导体材料包括掺杂剂浓度的掺杂剂和以工艺规定的方式产生的缺陷位置，使得半导体材料包括在介于5×10 7Ω·cm之间的欧姆电阻率和2·109＆OHgr··cm。关于高通量率和辐射量子谱的光谱分布，这种辐射转换器材料特别好地符合人类医疗应用中的要求。在至少一个实施例中，本发明还涉及辐射转换器和辐射探测器，以及用于生产这种辐射转换器材料的用途和方法。

10. 发明申请

US20100127182A1 X-ray radiation detector for use in a CT system 有权
标题翻译：用于CT系统的X射线辐射检测器
公开(公告)号：US20100127182A1
公开(公告)日：2010-05-27
申请号：US12591577
申请日：2009-11-24
申请人： Peter Hackenschmied , Christian Schröter , Matthias Strassburg
发明人： Peter Hackenschmied , Christian Schröter , Matthias Strassburg
IPC分类号： H01L31/0296 , H01L31/0272
CPC分类号： G01T1/00
摘要： At least one embodiment of the invention relates to an X-ray radiation detector, in particular for use in a CT system. In at least one embodiment, the X-ray radiation detector includes a semiconductor material used for detection, at least two ohmic contacts between the semiconductor material and a contact material, the semiconductor material and contact material each having a specific excitation energy of the charge carriers, with the excitation energy of the contact material corresponding to the excitation energy of the semiconductor material. At least one embodiment of the invention furthermore relates to a CT system in which an X-ray radiation detector is used, the X-ray radiation detector advantageously having at least two ideal ohmic contacts according to at least one embodiment of the invention.
摘要翻译：本发明的至少一个实施例涉及一种X射线辐射检测器，特别是用于CT系统中。在至少一个实施例中，X射线辐射检测器包括用于检测的半导体材料，半导体材料和接触材料之间的至少两个欧姆接触，半导体材料和接触材料各自具有电荷载体的特定激发能，其中接触材料的激发能对应于半导体材料的激发能。本发明的至少一个实施例还涉及其中使用X射线辐射检测器的CT系统，根据本发明的至少一个实施例，X射线辐射检测器有利地具有至少两个理想的欧姆接触。

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